DE69231543T2 - Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren - Google Patents

Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren

Info

Publication number
DE69231543T2
DE69231543T2 DE69231543T DE69231543T DE69231543T2 DE 69231543 T2 DE69231543 T2 DE 69231543T2 DE 69231543 T DE69231543 T DE 69231543T DE 69231543 T DE69231543 T DE 69231543T DE 69231543 T2 DE69231543 T2 DE 69231543T2
Authority
DE
Germany
Prior art keywords
layer
emitter
base
forming
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231543T
Other languages
German (de)
English (en)
Other versions
DE69231543D1 (de
Inventor
Burhan Bayraktaroglu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69231543D1 publication Critical patent/DE69231543D1/de
Application granted granted Critical
Publication of DE69231543T2 publication Critical patent/DE69231543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
DE69231543T 1991-07-31 1992-07-30 Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren Expired - Fee Related DE69231543T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/738,691 US5446294A (en) 1991-07-31 1991-07-31 Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same

Publications (2)

Publication Number Publication Date
DE69231543D1 DE69231543D1 (de) 2000-12-07
DE69231543T2 true DE69231543T2 (de) 2001-08-02

Family

ID=24969084

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231543T Expired - Fee Related DE69231543T2 (de) 1991-07-31 1992-07-30 Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren

Country Status (6)

Country Link
US (2) US5446294A (enExample)
EP (1) EP0525762B1 (enExample)
JP (1) JPH0621083A (enExample)
KR (1) KR930003418A (enExample)
DE (1) DE69231543T2 (enExample)
TW (1) TW221520B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
US6762479B2 (en) 1998-11-06 2004-07-13 International Business Machines Corporation Microwave array transistor for low-noise and high-power applications
US6303975B1 (en) 1999-11-09 2001-10-16 International Business Machines Corporation Low noise, high frequency solid state diode
FR2805081B1 (fr) * 2000-02-14 2002-10-11 Cit Alcatel Procede de fabrication de transistor bipolaire a double heterojonction sur materiau iii-v
US6600179B2 (en) * 2001-11-01 2003-07-29 M/A-Com, Inc. Power amplifier with base and collector straps
MY148644A (en) * 2005-07-18 2013-05-15 Orion Corp New pharmaceutical compounds
TWI386642B (zh) * 2009-06-29 2013-02-21 Century Display Shenzhen Co 玻璃基板、使用該玻璃基板的檢測方法、以及製作該玻璃基板的矩陣光罩
US9728603B2 (en) 2015-06-22 2017-08-08 Globalfoundries Inc. Bipolar junction transistors with double-tapered emitter fingers
US9899375B1 (en) * 2016-08-02 2018-02-20 Globalfoundries Inc. Co-integration of self-aligned and non-self aligned heterojunction bipolar transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
EP0240307B1 (en) * 1986-04-01 1993-12-22 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and method of producing the same
EP0300803B1 (en) * 1987-07-24 1994-06-22 Matsushita Electric Industrial Co., Ltd. High-frequency bipolar transistor and its fabrication method
US5124270A (en) * 1987-09-18 1992-06-23 Kabushiki Kaisha Toshiba Bipolar transistor having external base region
US5063427A (en) * 1987-10-13 1991-11-05 Northrop Corporation Planar bipolar transistors including heterojunction transistors
JP2851044B2 (ja) * 1988-03-30 1999-01-27 株式会社東芝 半導体装置の製造方法
US5012318A (en) * 1988-09-05 1991-04-30 Nec Corporation Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
US4939562A (en) * 1989-04-07 1990-07-03 Raytheon Company Heterojunction bipolar transistors and method of manufacture
JP2804095B2 (ja) * 1989-07-10 1998-09-24 株式会社東芝 ヘテロ接合バイボーラトランジスタ
US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor

Also Published As

Publication number Publication date
JPH0621083A (ja) 1994-01-28
DE69231543D1 (de) 2000-12-07
TW221520B (enExample) 1994-03-01
US5446294A (en) 1995-08-29
EP0525762B1 (en) 2000-11-02
US5648278A (en) 1997-07-15
KR930003418A (ko) 1993-02-24
EP0525762A2 (en) 1993-02-03
EP0525762A3 (en) 1994-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee