DE69231398T2 - Photoelektrischer Wandler und Steuerverfahren dafür - Google Patents
Photoelektrischer Wandler und Steuerverfahren dafürInfo
- Publication number
- DE69231398T2 DE69231398T2 DE69231398T DE69231398T DE69231398T2 DE 69231398 T2 DE69231398 T2 DE 69231398T2 DE 69231398 T DE69231398 T DE 69231398T DE 69231398 T DE69231398 T DE 69231398T DE 69231398 T2 DE69231398 T2 DE 69231398T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- photoelectric conversion
- conversion device
- voltage
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 130
- 239000012535 impurity Substances 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000002800 charge carrier Substances 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 15
- 229920006395 saturated elastomer Polymers 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 226
- 239000000758 substrate Substances 0.000 description 34
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 21
- 230000005684 electric field Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 238000005137 deposition process Methods 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 6
- 229910052986 germanium hydride Inorganic materials 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000006862 quantum yield reaction Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910004469 SiHx Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 101150018444 sub2 gene Proteins 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- 241000947853 Vibrionales Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1843—Infrared image sensors of the hybrid type
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3332785A JPH05145108A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置の駆動方法 |
| JP3332787A JPH05145110A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置及びその駆動方法 |
| JP3332786A JPH05145109A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置及びその駆動方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69231398D1 DE69231398D1 (de) | 2000-10-05 |
| DE69231398T2 true DE69231398T2 (de) | 2001-02-22 |
Family
ID=27340561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69231398T Expired - Fee Related DE69231398T2 (de) | 1991-11-22 | 1992-11-20 | Photoelektrischer Wandler und Steuerverfahren dafür |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5767560A (OSRAM) |
| EP (1) | EP0543391B1 (OSRAM) |
| DE (1) | DE69231398T2 (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5993627A (en) * | 1997-06-24 | 1999-11-30 | Large Scale Biology Corporation | Automated system for two-dimensional electrophoresis |
| US6353250B1 (en) * | 1997-11-07 | 2002-03-05 | Nippon Telegraph And Telephone Corporation | Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof |
| US6252221B1 (en) * | 1999-06-21 | 2001-06-26 | Agilent Technologies, Inc. | Photo-conductive switch having an improved semiconductor structure |
| US6229202B1 (en) | 2000-01-10 | 2001-05-08 | Micron Technology, Inc. | Semiconductor package having downset leadframe for reducing package bow |
| TWI292583B (en) * | 2000-08-22 | 2008-01-11 | Harvard College | Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices |
| WO2004079311A1 (ja) * | 2003-03-07 | 2004-09-16 | Fujitsu Limited | 電磁放射線センサ及びその製造方法 |
| US8239176B2 (en) * | 2008-02-13 | 2012-08-07 | Feng Ma | Simulation methods and systems for carriers having multiplications |
| WO2014097519A1 (ja) | 2012-12-18 | 2014-06-26 | パナソニック株式会社 | 半導体光検出器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
| US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
| US4886977A (en) * | 1986-11-11 | 1989-12-12 | Canon Kabushiki Kaisha | Photoelectric converter provided with voltage dividing means |
| US5019887A (en) * | 1987-03-27 | 1991-05-28 | Canon Kabushiki Kaisha | Non-single crystalline photosensor with hydrogen and halogen |
| JPH0715979B2 (ja) * | 1987-08-27 | 1995-02-22 | 三菱電機株式会社 | 超格子撮像素子 |
| JPH02275670A (ja) * | 1989-01-18 | 1990-11-09 | Canon Inc | 光電変換装置および画像読取装置 |
| DE69033657T2 (de) * | 1989-08-04 | 2001-05-03 | Canon K.K., Tokio/Tokyo | Photoelektrischer umwandler |
| EP0444963B1 (en) * | 1990-03-02 | 1997-09-17 | Canon Kabushiki Kaisha | Photoelectric transfer device |
-
1992
- 1992-11-20 DE DE69231398T patent/DE69231398T2/de not_active Expired - Fee Related
- 1992-11-20 EP EP92119795A patent/EP0543391B1/en not_active Expired - Lifetime
-
1994
- 1994-11-30 US US08/352,688 patent/US5767560A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0543391B1 (en) | 2000-08-30 |
| EP0543391A2 (en) | 1993-05-26 |
| US5767560A (en) | 1998-06-16 |
| EP0543391A3 (OSRAM) | 1994-04-27 |
| DE69231398D1 (de) | 2000-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |