DE69231398T2 - Photoelektrischer Wandler und Steuerverfahren dafür - Google Patents

Photoelektrischer Wandler und Steuerverfahren dafür

Info

Publication number
DE69231398T2
DE69231398T2 DE69231398T DE69231398T DE69231398T2 DE 69231398 T2 DE69231398 T2 DE 69231398T2 DE 69231398 T DE69231398 T DE 69231398T DE 69231398 T DE69231398 T DE 69231398T DE 69231398 T2 DE69231398 T2 DE 69231398T2
Authority
DE
Germany
Prior art keywords
control method
method therefor
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231398T
Other languages
English (en)
Other versions
DE69231398D1 (de
Inventor
Ihachiro Gofuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3332787A external-priority patent/JPH05145110A/ja
Priority claimed from JP3332786A external-priority patent/JPH05145109A/ja
Priority claimed from JP3332785A external-priority patent/JPH05145108A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69231398D1 publication Critical patent/DE69231398D1/de
Application granted granted Critical
Publication of DE69231398T2 publication Critical patent/DE69231398T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
DE69231398T 1991-11-22 1992-11-20 Photoelektrischer Wandler und Steuerverfahren dafür Expired - Fee Related DE69231398T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3332787A JPH05145110A (ja) 1991-11-22 1991-11-22 光電変換装置及びその駆動方法
JP3332786A JPH05145109A (ja) 1991-11-22 1991-11-22 光電変換装置及びその駆動方法
JP3332785A JPH05145108A (ja) 1991-11-22 1991-11-22 光電変換装置の駆動方法

Publications (2)

Publication Number Publication Date
DE69231398D1 DE69231398D1 (de) 2000-10-05
DE69231398T2 true DE69231398T2 (de) 2001-02-22

Family

ID=27340561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231398T Expired - Fee Related DE69231398T2 (de) 1991-11-22 1992-11-20 Photoelektrischer Wandler und Steuerverfahren dafür

Country Status (3)

Country Link
US (1) US5767560A (de)
EP (1) EP0543391B1 (de)
DE (1) DE69231398T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993627A (en) * 1997-06-24 1999-11-30 Large Scale Biology Corporation Automated system for two-dimensional electrophoresis
US6353250B1 (en) * 1997-11-07 2002-03-05 Nippon Telegraph And Telephone Corporation Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof
US6252221B1 (en) * 1999-06-21 2001-06-26 Agilent Technologies, Inc. Photo-conductive switch having an improved semiconductor structure
US6229202B1 (en) 2000-01-10 2001-05-08 Micron Technology, Inc. Semiconductor package having downset leadframe for reducing package bow
EP2360298A3 (de) * 2000-08-22 2011-10-05 President and Fellows of Harvard College Verfahren zur Abscheidung eines halbleitenden Nanodrahtes
WO2004079311A1 (ja) * 2003-03-07 2004-09-16 Fujitsu Limited 電磁放射線センサ及びその製造方法
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
CN104885222B (zh) 2012-12-18 2018-03-02 松下知识产权经营株式会社 半导体光检测器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US4886977A (en) * 1986-11-11 1989-12-12 Canon Kabushiki Kaisha Photoelectric converter provided with voltage dividing means
US5019887A (en) * 1987-03-27 1991-05-28 Canon Kabushiki Kaisha Non-single crystalline photosensor with hydrogen and halogen
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
JPH02275670A (ja) * 1989-01-18 1990-11-09 Canon Inc 光電変換装置および画像読取装置
JP2838906B2 (ja) * 1989-08-04 1998-12-16 キヤノン株式会社 光電変換装置
EP0444963B1 (de) * 1990-03-02 1997-09-17 Canon Kabushiki Kaisha Fotoelektrische Übertragungsvorrichtung

Also Published As

Publication number Publication date
EP0543391A3 (de) 1994-04-27
EP0543391A2 (de) 1993-05-26
EP0543391B1 (de) 2000-08-30
US5767560A (en) 1998-06-16
DE69231398D1 (de) 2000-10-05

Similar Documents

Publication Publication Date Title
DE69740088D1 (de) Photoelektrische Umwandlungsvorrichtung und Steuerverfahren dafür
DE69230055D1 (de) Hinweisvorrichtung und steuerungsverfahren
FI920751A (fi) Nosturin ohjausmenetelmä
DE69326428D1 (de) Photoelektrische Steuerungseinheit
DE69320709D1 (de) Photoelektrischer Wandler und Steuerverfahren dafür
KR960008810A (ko) 편집 방법 및 편집 제어 기기
DE69214375D1 (de) Kodierer und Antriebssystem
DE69217093D1 (de) Verbrennungsvorrichtung und Steuerverfahren
DE69326533T2 (de) Photoelektrische Steuerungseinheit
DE69425928T2 (de) Photoelektrischer Umwandler
DE69229137D1 (de) Leistungseinheit und Leistungsanschlussverfahren
DE69223286T2 (de) Photoelektrischer Umwandler
DE69421149T2 (de) Leistungsumwandlungssystem und Steuereinrichtung dafür
DE69319811T2 (de) Editiermethode und Editiergeräte
DE69330039D1 (de) Gerät und Ausgabesteuerungsverfahren
DE69327893T2 (de) Ausgabesteuerverfahren und -gerät
NO933711D0 (no) Boelgeenergi-omformer
DE69231398D1 (de) Photoelektrischer Wandler und Steuerverfahren dafür
DE69329126D1 (de) Photoelektrischer Umwandler
DE69119538T2 (de) Robotersteuerungsverfahren und Gerät
DE4290948T1 (de) Funktionswählverfahren und -vorrichtung
ATA51592A (de) Bidirektionale wandlerschaltung
DE69220418T2 (de) Festkörper-Bildaufnahmevorrichtung und Steuermethode dafür
DE69322594T2 (de) Festkörper-Bildaufnahmevorrichtung und Steuerverfahren dafür
DE59108557D1 (de) Wissensbasierte steuer- und regeleinrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee