EP0543391A3 - - Google Patents
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- Publication number
- EP0543391A3 EP0543391A3 EP19920119795 EP92119795A EP0543391A3 EP 0543391 A3 EP0543391 A3 EP 0543391A3 EP 19920119795 EP19920119795 EP 19920119795 EP 92119795 A EP92119795 A EP 92119795A EP 0543391 A3 EP0543391 A3 EP 0543391A3
- Authority
- EP
- European Patent Office
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3332787A JPH05145110A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置及びその駆動方法 |
JP33278791 | 1991-11-22 | ||
JP332786/91 | 1991-11-22 | ||
JP33278591 | 1991-11-22 | ||
JP3332785A JPH05145108A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置の駆動方法 |
JP332785/91 | 1991-11-22 | ||
JP332787/91 | 1991-11-22 | ||
JP33278691 | 1991-11-22 | ||
JP3332786A JPH05145109A (ja) | 1991-11-22 | 1991-11-22 | 光電変換装置及びその駆動方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0543391A2 EP0543391A2 (de) | 1993-05-26 |
EP0543391A3 true EP0543391A3 (de) | 1994-04-27 |
EP0543391B1 EP0543391B1 (de) | 2000-08-30 |
Family
ID=27340561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP92119795A Expired - Lifetime EP0543391B1 (de) | 1991-11-22 | 1992-11-20 | Photoelektrischer Wandler und Steuerverfahren dafür |
Country Status (3)
Country | Link |
---|---|
US (1) | US5767560A (de) |
EP (1) | EP0543391B1 (de) |
DE (1) | DE69231398T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5993627A (en) * | 1997-06-24 | 1999-11-30 | Large Scale Biology Corporation | Automated system for two-dimensional electrophoresis |
US6353250B1 (en) * | 1997-11-07 | 2002-03-05 | Nippon Telegraph And Telephone Corporation | Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof |
US6252221B1 (en) * | 1999-06-21 | 2001-06-26 | Agilent Technologies, Inc. | Photo-conductive switch having an improved semiconductor structure |
US6229202B1 (en) | 2000-01-10 | 2001-05-08 | Micron Technology, Inc. | Semiconductor package having downset leadframe for reducing package bow |
US20020130311A1 (en) * | 2000-08-22 | 2002-09-19 | Lieber Charles M. | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
WO2004079311A1 (ja) * | 2003-03-07 | 2004-09-16 | Fujitsu Limited | 電磁放射線センサ及びその製造方法 |
US8239176B2 (en) * | 2008-02-13 | 2012-08-07 | Feng Ma | Simulation methods and systems for carriers having multiplications |
CN104885222B (zh) | 2012-12-18 | 2018-03-02 | 松下知识产权经营株式会社 | 半导体光检测器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0087299A2 (de) * | 1982-02-23 | 1983-08-31 | Western Electric Company, Incorporated | Mehrschichtenlawinenfotodetektor |
EP0444963A2 (de) * | 1990-03-02 | 1991-09-04 | Canon Kabushiki Kaisha | Fotoelektrische Übertragungsvorrichtung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
US4886977A (en) * | 1986-11-11 | 1989-12-12 | Canon Kabushiki Kaisha | Photoelectric converter provided with voltage dividing means |
US5019887A (en) * | 1987-03-27 | 1991-05-28 | Canon Kabushiki Kaisha | Non-single crystalline photosensor with hydrogen and halogen |
JPH0715979B2 (ja) * | 1987-08-27 | 1995-02-22 | 三菱電機株式会社 | 超格子撮像素子 |
JPH02275670A (ja) * | 1989-01-18 | 1990-11-09 | Canon Inc | 光電変換装置および画像読取装置 |
WO1991002381A1 (en) * | 1989-08-04 | 1991-02-21 | Canon Kabushiki Kaisha | Photo-electric converter |
-
1992
- 1992-11-20 EP EP92119795A patent/EP0543391B1/de not_active Expired - Lifetime
- 1992-11-20 DE DE69231398T patent/DE69231398T2/de not_active Expired - Fee Related
-
1994
- 1994-11-30 US US08/352,688 patent/US5767560A/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0087299A2 (de) * | 1982-02-23 | 1983-08-31 | Western Electric Company, Incorporated | Mehrschichtenlawinenfotodetektor |
EP0444963A2 (de) * | 1990-03-02 | 1991-09-04 | Canon Kabushiki Kaisha | Fotoelektrische Übertragungsvorrichtung |
Non-Patent Citations (1)
Title |
---|
G. RIPAMONTI ET AL.: "Realization of a staircase photodiode: towards a solid-state photomultiplier", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, vol. A288, no. 1, 1 March 1990 (1990-03-01), AMSTERDAM NL, pages 99 - 103 * |
Also Published As
Publication number | Publication date |
---|---|
DE69231398D1 (de) | 2000-10-05 |
US5767560A (en) | 1998-06-16 |
EP0543391A2 (de) | 1993-05-26 |
DE69231398T2 (de) | 2001-02-22 |
EP0543391B1 (de) | 2000-08-30 |
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