DE3104489C2 - - Google Patents
Info
- Publication number
- DE3104489C2 DE3104489C2 DE3104489A DE3104489A DE3104489C2 DE 3104489 C2 DE3104489 C2 DE 3104489C2 DE 3104489 A DE3104489 A DE 3104489A DE 3104489 A DE3104489 A DE 3104489A DE 3104489 C2 DE3104489 C2 DE 3104489C2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- charge
- state
- clock
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000002800 charge carrier Substances 0.000 claims description 30
- 230000010354 integration Effects 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 20
- 238000009825 accumulation Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 11
- 230000006798 recombination Effects 0.000 claims description 6
- 238000005215 recombination Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 6
- 239000010410 layer Substances 0.000 claims 5
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000003491 array Methods 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 36
- 238000000034 method Methods 0.000 description 14
- 230000008901 benefit Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000750676 Bacillus phage Gamma Species 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8000998A NL8000998A (nl) | 1980-02-19 | 1980-02-19 | Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3104489A1 DE3104489A1 (de) | 1981-12-24 |
| DE3104489C2 true DE3104489C2 (OSRAM) | 1991-01-31 |
Family
ID=19834852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813104489 Granted DE3104489A1 (de) | 1980-02-19 | 1981-02-09 | Festkoerperaufnahmekamera mit einer halbleitenden photoempfindlichen auftreffplatte |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4485315A (OSRAM) |
| JP (1) | JPS56138371A (OSRAM) |
| AU (1) | AU544540B2 (OSRAM) |
| CA (1) | CA1180104A (OSRAM) |
| DE (1) | DE3104489A1 (OSRAM) |
| FR (1) | FR2476417B1 (OSRAM) |
| GB (1) | GB2069759B (OSRAM) |
| IT (1) | IT1135490B (OSRAM) |
| NL (1) | NL8000998A (OSRAM) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8219853D0 (en) * | 1982-07-14 | 1995-04-12 | British Aerospace | Image sensing |
| US4481538A (en) * | 1982-09-30 | 1984-11-06 | Rca Corporation | Overcoming flicker in field-interlaced CCD imagers with three-phase clocking of the image register |
| US4622596A (en) * | 1983-02-21 | 1986-11-11 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US4507684A (en) * | 1983-03-07 | 1985-03-26 | Rca Corporation | Reducing grain in multi-phase-clocked CCD imagers |
| JPS59201586A (ja) * | 1983-04-28 | 1984-11-15 | Canon Inc | 撮像装置 |
| NL8304035A (nl) * | 1983-11-24 | 1985-06-17 | Philips Nv | Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
| DE3546841C2 (de) * | 1984-01-18 | 1994-09-22 | Canon Kk | Bildaufnahmevorrichtung |
| DE3501138A1 (de) * | 1984-01-18 | 1985-07-18 | Canon K.K., Tokio/Tokyo | Bildaufnahmevorrichtung |
| US4679212A (en) * | 1984-07-31 | 1987-07-07 | Texas Instruments Incorporated | Method and apparatus for using surface trap recombination in solid state imaging devices |
| JPS6153766A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | インタ−ライン型電荷転送撮像素子 |
| US4743778A (en) * | 1985-03-25 | 1988-05-10 | Nippon Kogaku K. K. | Solid-state area imaging device having interline transfer CCD |
| JPS61294866A (ja) * | 1985-06-21 | 1986-12-25 | Nippon Texas Instr Kk | 電荷結合型半導体装置 |
| US4806498A (en) * | 1985-06-21 | 1989-02-21 | Texas Instruments Incorporated | Semiconductor charge-coupled device and process of fabrication thereof |
| JP2724702B2 (ja) * | 1985-06-21 | 1998-03-09 | 日本テキサス・インスツルメンツ 株式会社 | 電荷結合型半導体装置の製造方法 |
| GB2177542B (en) * | 1985-07-05 | 1989-07-12 | Gen Electric Plc | Charge coupled device image sensors |
| GB8517081D0 (en) * | 1985-07-05 | 1985-08-14 | Gen Electric Co Plc | Image sensors |
| JPH0815322B2 (ja) * | 1986-05-21 | 1996-02-14 | キヤノン株式会社 | 固体撮像装置 |
| US5325412A (en) * | 1989-05-23 | 1994-06-28 | U.S. Philips Corporation | Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement |
| US5115458A (en) * | 1989-09-05 | 1992-05-19 | Eastman Kodak Company | Reducing dark current in charge coupled devices |
| JP2604250B2 (ja) * | 1989-11-16 | 1997-04-30 | 三洋電機株式会社 | 固体撮像素子 |
| CA2045363A1 (en) * | 1990-10-01 | 1992-04-02 | Selim S. Bencuya | Ccd frame transfer device with simplified and improved well and electrode structure |
| US5182647A (en) * | 1990-12-13 | 1993-01-26 | Eastman Kodak Company | High resolution charge-coupled device (ccd) camera system |
| DE69329100T2 (de) * | 1992-12-09 | 2001-03-22 | Koninklijke Philips Electronics N.V., Eindhoven | Ladungsgekoppelte Anordnung |
| DE69410147T2 (de) * | 1993-03-03 | 1998-12-03 | Philips Electronics N.V., Eindhoven | Ladungsgekoppelte Anordnung |
| US5519204A (en) * | 1994-04-25 | 1996-05-21 | Cyberoptics Corporation | Method and apparatus for exposure control in light-based measurement instruments |
| JP4347948B2 (ja) * | 1999-05-28 | 2009-10-21 | Ｈｏｙａ株式会社 | 撮像素子駆動装置 |
| US6573541B1 (en) | 2000-09-29 | 2003-06-03 | International Business Machines Corporation | Charge coupled device with channel well |
| US7432968B2 (en) * | 2004-05-10 | 2008-10-07 | Micron Technology, Inc. | CMOS image sensor with reduced 1/f noise |
| US8187174B2 (en) | 2007-01-22 | 2012-05-29 | Capso Vision, Inc. | Detection of when a capsule camera enters into or goes out of a human body and associated operations |
| RU2472302C1 (ru) * | 2011-11-03 | 2013-01-10 | Вячеслав Михайлович Смелков | Телевизионная система для регистрации изображений в условиях сложной освещенности и/или сложной яркости объектов наблюдения |
| RU2484597C1 (ru) * | 2011-12-21 | 2013-06-10 | Вячеслав Михайлович Смелков | Телевизионная камера для наблюдения в условиях сложной освещенности и/или сложной яркости объектов |
| RU2632574C1 (ru) * | 2016-05-16 | 2017-10-06 | Вячеслав Михайлович Смелков | Устройство автоматической регулировки времени накопления телевизионного сенсора, изготовленного по технологии приборов с зарядовой связью |
| RU2632573C1 (ru) * | 2016-05-16 | 2017-10-06 | Вячеслав Михайлович Смелков | Устройство автоматической регулировки времени накопления телевизионного сенсора, изготовленного по технологии приборов с зарядовой связью |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
| GB1503820A (en) * | 1974-07-25 | 1978-03-15 | Rca Corp | Interlaced readout of a charge coupled array |
| GB2026769A (en) * | 1978-07-26 | 1980-02-06 | Sony Corp | Charge transfer image sensors |
| DE3104455A1 (de) * | 1980-02-19 | 1981-12-17 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven | Ladungsgekoppelte bildaufnahmevorrichtung und verfahren zu ihrer herstellung |
-
1980
- 1980-02-19 NL NL8000998A patent/NL8000998A/nl not_active Application Discontinuation
-
1981
- 1981-02-09 DE DE19813104489 patent/DE3104489A1/de active Granted
- 1981-02-12 CA CA000370701A patent/CA1180104A/en not_active Expired
- 1981-02-16 GB GB8104812A patent/GB2069759B/en not_active Expired
- 1981-02-16 IT IT19788/81A patent/IT1135490B/it active
- 1981-02-18 FR FR8103171A patent/FR2476417B1/fr not_active Expired
- 1981-02-18 AU AU67399/81A patent/AU544540B2/en not_active Ceased
- 1981-02-19 JP JP2230281A patent/JPS56138371A/ja active Granted
-
1984
- 1984-02-09 US US06/578,301 patent/US4485315A/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1503820A (en) * | 1974-07-25 | 1978-03-15 | Rca Corp | Interlaced readout of a charge coupled array |
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
| GB1529501A (en) * | 1975-01-13 | 1978-10-25 | Rca Corp | Blooming control for charge coupled imager |
| GB2026769A (en) * | 1978-07-26 | 1980-02-06 | Sony Corp | Charge transfer image sensors |
| DE2930402A1 (de) * | 1978-07-26 | 1980-02-14 | Sony Corp | Ladungs-transfervorrichtung |
| DE3104455A1 (de) * | 1980-02-19 | 1981-12-17 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven | Ladungsgekoppelte bildaufnahmevorrichtung und verfahren zu ihrer herstellung |
Non-Patent Citations (2)
| Title |
|---|
| C.H.SEQUIN:"Blooming Suppression in Charge CoupledArea Imaging Devices",in:The Bell System TechnicalJournal, Okt.1972, S.1923-1926 * |
| W.F.KOSONOCKY et al.:"Control of Blooming in ChargCoupled Images" in: RCA Review, Vol.35, März 1974,S.3-24 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56138371A (en) | 1981-10-28 |
| NL8000998A (nl) | 1981-09-16 |
| DE3104489A1 (de) | 1981-12-24 |
| IT8119788A0 (it) | 1981-02-16 |
| JPH0381351B2 (OSRAM) | 1991-12-27 |
| CA1180104A (en) | 1984-12-27 |
| FR2476417A1 (fr) | 1981-08-21 |
| IT1135490B (it) | 1986-08-20 |
| FR2476417B1 (fr) | 1986-07-25 |
| GB2069759B (en) | 1984-04-04 |
| AU6739981A (en) | 1981-08-27 |
| AU544540B2 (en) | 1985-06-06 |
| US4485315A (en) | 1984-11-27 |
| GB2069759A (en) | 1981-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |