DE69231310T2 - Heteroübergang-Bipolartransistor mit Emitter aus gradiertem Bandabstand-Monokristall - Google Patents

Heteroübergang-Bipolartransistor mit Emitter aus gradiertem Bandabstand-Monokristall

Info

Publication number
DE69231310T2
DE69231310T2 DE69231310T DE69231310T DE69231310T2 DE 69231310 T2 DE69231310 T2 DE 69231310T2 DE 69231310 T DE69231310 T DE 69231310T DE 69231310 T DE69231310 T DE 69231310T DE 69231310 T2 DE69231310 T2 DE 69231310T2
Authority
DE
Germany
Prior art keywords
monocrystal
emitter
bipolar transistor
heterojunction bipolar
graded bandgap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231310T
Other languages
English (en)
Other versions
DE69231310D1 (de
Inventor
Emmanuel F Crabbe
David L Harame
Bernard S Meyerson
Gary Patton
Johannes M C Stork
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69231310D1 publication Critical patent/DE69231310D1/de
Application granted granted Critical
Publication of DE69231310T2 publication Critical patent/DE69231310T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69231310T 1991-11-13 1992-10-12 Heteroübergang-Bipolartransistor mit Emitter aus gradiertem Bandabstand-Monokristall Expired - Lifetime DE69231310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/792,493 US5352912A (en) 1991-11-13 1991-11-13 Graded bandgap single-crystal emitter heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
DE69231310D1 DE69231310D1 (de) 2000-09-07
DE69231310T2 true DE69231310T2 (de) 2001-02-15

Family

ID=25157071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231310T Expired - Lifetime DE69231310T2 (de) 1991-11-13 1992-10-12 Heteroübergang-Bipolartransistor mit Emitter aus gradiertem Bandabstand-Monokristall

Country Status (4)

Country Link
US (1) US5352912A (de)
EP (1) EP0541971B1 (de)
JP (1) JPH07118480B2 (de)
DE (1) DE69231310T2 (de)

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CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Heteroepitaxial layers with low defect density and arbitrary network parameter
JP2778553B2 (ja) * 1995-09-29 1998-07-23 日本電気株式会社 半導体装置およびその製造方法
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
US6750484B2 (en) * 1996-12-09 2004-06-15 Nokia Corporation Silicon germanium hetero bipolar transistor
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
TW567559B (en) * 1999-06-23 2003-12-21 Hitachi Ltd Semiconductor device
US6573539B2 (en) 2000-01-10 2003-06-03 International Business Machines Corporation Heterojunction bipolar transistor with silicon-germanium base
US6251738B1 (en) 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
DE10002364A1 (de) 2000-01-20 2001-08-02 Infineon Technologies Ag Silizium-Germanium-Bipolartranistor mit optimiertem Germaniumprofil
TW512529B (en) * 2000-06-14 2002-12-01 Infineon Technologies Ag Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
JP4882141B2 (ja) * 2000-08-16 2012-02-22 富士通株式会社 ヘテロバイポーラトランジスタ
JP2002164533A (ja) * 2000-11-29 2002-06-07 Showa Denko Kk 化合物半導体積層構造体及びそれを用いたバイポーラトランジスタ
US20020163013A1 (en) 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6555891B1 (en) 2000-10-17 2003-04-29 International Business Machines Corporation SOI hybrid structure with selective epitaxial growth of silicon
US6362065B1 (en) 2001-02-26 2002-03-26 Texas Instruments Incorporated Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer
EP1265294A3 (de) * 2001-06-07 2004-04-07 Matsushita Electric Industrial Co., Ltd. Heteroübergang-Bipolartransistor
US6555852B1 (en) * 2002-01-17 2003-04-29 Agere Systems Inc. Bipolar transistor having an emitter comprised of a semi-insulating material
US20030230778A1 (en) * 2002-01-30 2003-12-18 Sumitomo Mitsubishi Silicon Corporation SOI structure having a SiGe Layer interposed between the silicon and the insulator
US7170112B2 (en) * 2002-10-30 2007-01-30 International Business Machines Corporation Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
JP4306266B2 (ja) * 2003-02-04 2009-07-29 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP3653087B2 (ja) * 2003-07-04 2005-05-25 三菱重工業株式会社 Ｄｃ／ｄｃコンバータ
JP2005072157A (ja) * 2003-08-22 2005-03-17 Mitsubishi Heavy Ind Ltd 電力変換装置
US7544577B2 (en) * 2005-08-26 2009-06-09 International Business Machines Corporation Mobility enhancement in SiGe heterojunction bipolar transistors
JP4829566B2 (ja) * 2005-08-30 2011-12-07 株式会社日立製作所 半導体装置及びその製造方法
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7294869B2 (en) * 2006-04-04 2007-11-13 International Business Machines Corporation Silicon germanium emitter
US9455338B1 (en) * 2012-12-14 2016-09-27 Altera Corporation Methods for fabricating PNP bipolar junction transistors
CN103441141B (zh) * 2013-07-29 2016-08-10 北京工业大学 超宽温区高热稳定性微波功率SiGe异质结双极晶体管
US11682718B2 (en) 2021-04-15 2023-06-20 International Business Machines Corporation Vertical bipolar junction transistor with all-around extrinsic base and epitaxially graded intrinsic base

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US3275986A (en) * 1962-06-14 1966-09-27 Gen Dynamics Corp Pattern recognition systems
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
JPS6179255A (ja) * 1984-09-27 1986-04-22 Toshiba Corp ヘテロ接合トランジスタの製造方法
US4768074A (en) * 1984-11-20 1988-08-30 Kabushiki Kaisha Toshiba Heterojunction bipolar transistor having an emitter region with a band gap greater than that of a base region
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
US4716445A (en) * 1986-01-17 1987-12-29 Nec Corporation Heterojunction bipolar transistor having a base region of germanium
JPS62165975A (ja) * 1986-01-17 1987-07-22 Nec Corp ヘテロ構造バイポ−ラ・トランジスタ
US4771326A (en) * 1986-07-09 1988-09-13 Texas Instruments Incorporated Composition double heterojunction transistor
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
JP2804095B2 (ja) * 1989-07-10 1998-09-24 株式会社東芝 ヘテロ接合バイボーラトランジスタ
US4959702A (en) * 1989-10-05 1990-09-25 Motorola, Inc. Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
US5132764A (en) * 1991-03-21 1992-07-21 Texas Instruments Incorporated Multilayer base heterojunction bipolar transistor

Also Published As

Publication number Publication date
EP0541971A3 (en) 1993-09-29
JPH07118480B2 (ja) 1995-12-18
DE69231310D1 (de) 2000-09-07
JPH07193078A (ja) 1995-07-28
US5352912A (en) 1994-10-04
EP0541971A2 (de) 1993-05-19
EP0541971B1 (de) 2000-08-02

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