DE69225347D1 - Projektionsbelichtungsmethode und optische Maske für die Projektionsbelichtung - Google Patents

Projektionsbelichtungsmethode und optische Maske für die Projektionsbelichtung

Info

Publication number
DE69225347D1
DE69225347D1 DE69225347T DE69225347T DE69225347D1 DE 69225347 D1 DE69225347 D1 DE 69225347D1 DE 69225347 T DE69225347 T DE 69225347T DE 69225347 T DE69225347 T DE 69225347T DE 69225347 D1 DE69225347 D1 DE 69225347D1
Authority
DE
Germany
Prior art keywords
projection exposure
optical mask
exposure method
projection
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69225347T
Other languages
English (en)
Other versions
DE69225347T2 (de
Inventor
Satoru Asai
Isamu Hanyu
Mitsuji Nunokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69225347D1 publication Critical patent/DE69225347D1/de
Application granted granted Critical
Publication of DE69225347T2 publication Critical patent/DE69225347T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69225347T 1991-02-19 1992-02-18 Projektionsbelichtungsmethode und optische Maske für die Projektionsbelichtung Expired - Lifetime DE69225347T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4539491 1991-02-19

Publications (2)

Publication Number Publication Date
DE69225347D1 true DE69225347D1 (de) 1998-06-10
DE69225347T2 DE69225347T2 (de) 1998-09-03

Family

ID=12718050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69225347T Expired - Lifetime DE69225347T2 (de) 1991-02-19 1992-02-18 Projektionsbelichtungsmethode und optische Maske für die Projektionsbelichtung

Country Status (4)

Country Link
US (1) US5418093A (de)
EP (1) EP0500456B1 (de)
KR (1) KR960010023B1 (de)
DE (1) DE69225347T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
JP3194155B2 (ja) * 1992-01-31 2001-07-30 キヤノン株式会社 半導体デバイスの製造方法及びそれを用いた投影露光装置
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
EP0634028B1 (de) * 1992-04-06 1998-07-22 MicroUnity Systems Engineering, Inc. Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen
USRE36475E (en) * 1993-09-15 1999-12-28 Hyundai Electronics Industries Co., Ltd. Method of forming a via plug in a semiconductor device
JPH09167753A (ja) * 1995-08-14 1997-06-24 Toshiba Corp 半導体基板の表面の平坦化方法とその装置
US5866913A (en) * 1995-12-19 1999-02-02 International Business Machines Corporation Proximity correction dose modulation for E-beam projection lithography
KR100229611B1 (ko) * 1996-06-12 1999-11-15 구자홍 액정표시장치의 제조방법
US5786114A (en) * 1997-01-10 1998-07-28 Kabushiki Kaisha Toshiba Attenuated phase shift mask with halftone boundary regions
US6440644B1 (en) 1997-10-15 2002-08-27 Kabushiki Kaisha Toshiba Planarization method and system using variable exposure
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
US6947025B2 (en) * 2001-10-09 2005-09-20 Seiko Epson Corporation Lighting apparatus and projection type display, and driving method therefore
KR100596801B1 (ko) * 2005-05-18 2006-07-04 주식회사 하이닉스반도체 반도체 소자 제조용 포토마스크

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1154327B (de) * 1962-10-27 1963-09-12 Telefunken Patent Verfahren zur Herstellung von Mikromasken
IT939738B (it) * 1970-08-12 1973-02-10 Rank Organisation Ltd Dispositivo di illuminazione per la stampa fotolitografica dei componenti di microcircuiti
DE2835363A1 (de) * 1978-08-11 1980-03-13 Siemens Ag Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
JP2697746B2 (ja) * 1989-09-01 1998-01-14 富士通株式会社 投影露光装置用光学マスク

Also Published As

Publication number Publication date
EP0500456B1 (de) 1998-05-06
EP0500456A1 (de) 1992-08-26
KR960010023B1 (ko) 1996-07-25
US5418093A (en) 1995-05-23
KR920017180A (ko) 1992-09-26
DE69225347T2 (de) 1998-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE