DE69215686D1 - Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist - Google Patents

Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist

Info

Publication number
DE69215686D1
DE69215686D1 DE69215686T DE69215686T DE69215686D1 DE 69215686 D1 DE69215686 D1 DE 69215686D1 DE 69215686 T DE69215686 T DE 69215686T DE 69215686 T DE69215686 T DE 69215686T DE 69215686 D1 DE69215686 D1 DE 69215686D1
Authority
DE
Germany
Prior art keywords
target
pct
layer
assembly
cathode sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69215686T
Other languages
English (en)
Inventor
Guy Campet
Jean-Michel Chabagno
Claude Residence Bois-D Delmas
Joseph Portier
Jean Salardenne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe National Elf Aquitaine
Original Assignee
Societe National Elf Aquitaine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe National Elf Aquitaine filed Critical Societe National Elf Aquitaine
Application granted granted Critical
Publication of DE69215686D1 publication Critical patent/DE69215686D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Ceramic Products (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69215686T 1991-09-03 1992-09-01 Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist Expired - Lifetime DE69215686D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9110860A FR2680799B1 (fr) 1991-09-03 1991-09-03 Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element.
PCT/FR1992/000835 WO1993005195A1 (fr) 1991-09-03 1992-09-01 Element de cible pour pulverisation cathodique

Publications (1)

Publication Number Publication Date
DE69215686D1 true DE69215686D1 (de) 1997-01-16

Family

ID=9416567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215686T Expired - Lifetime DE69215686D1 (de) 1991-09-03 1992-09-01 Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist

Country Status (8)

Country Link
US (1) US5522976A (de)
EP (1) EP0602150B1 (de)
JP (1) JPH06510090A (de)
AT (1) ATE145944T1 (de)
CA (1) CA2116776A1 (de)
DE (1) DE69215686D1 (de)
FR (1) FR2680799B1 (de)
WO (1) WO1993005195A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL122949A (en) * 1995-08-31 2000-08-13 Innovative Sputtering Tech Process for manufacturing ito alloy articles
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US6319852B1 (en) 1995-11-16 2001-11-20 Texas Instruments Incorporated Nanoporous dielectric thin film formation using a post-deposition catalyst
US6130152A (en) 1995-11-16 2000-10-10 Texas Instruments Incorporated Aerogel thin film formation from multi-solvent systems
US5807607A (en) * 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6063714A (en) * 1995-11-16 2000-05-16 Texas Instruments Incorporated Nanoporous dielectric thin film surface modification
WO1997031739A1 (en) * 1996-03-03 1997-09-04 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
US5963778A (en) * 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
AU9410498A (en) * 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
DE19920304A1 (de) * 1999-05-03 2000-11-09 Leybold Materials Gmbh Target
DE60130322T2 (de) * 2000-02-22 2008-06-12 Metalysis Ltd., Wath-Upon-Dearne Verfahren zur herstellung von metallschaum durch elektrolytische reduktion poröser oxidischer vorformen
US6706239B2 (en) 2001-02-05 2004-03-16 Porvair Plc Method of co-forming metal foam articles and the articles formed by the method thereof
US20020110700A1 (en) * 2001-02-12 2002-08-15 Hein Gerald F. Process for forming decorative films and resulting products
FR2835534B1 (fr) * 2002-02-06 2004-12-24 Saint Gobain CIBLE CERAMIQUE NiOx NON STOECHIOMETRIQUE
WO2006001975A1 (en) * 2004-06-15 2006-01-05 Tosoh Smd, Inc. Metal foam shield for sputter reactor
US7328831B1 (en) 2004-06-25 2008-02-12 Porvair Plc Method of making a brazed metal article and the article formed thereby
US7372610B2 (en) 2005-02-23 2008-05-13 Sage Electrochromics, Inc. Electrochromic devices and methods
ES2663895T3 (es) * 2006-05-18 2018-04-17 Hydro-Quebec Procedimiento de preparación de cerámicas, cerámicas obtenidas de este modo y sus utilizaciones concretamente como diana para pulverización catódica
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
US8628645B2 (en) * 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
JP5385883B2 (ja) * 2010-10-05 2014-01-08 株式会社神戸製鋼所 ターゲット接合体
US8048707B1 (en) * 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
CN103492608B (zh) 2011-02-14 2016-04-13 东曹Smd有限公司 经扩散结合的溅射靶组件及制造方法
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
JP6376380B2 (ja) * 2014-07-18 2018-08-22 三菱マテリアル株式会社 ニッケル酸リチウムスパッタリングターゲットの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791955A (en) * 1972-12-11 1974-02-12 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
JPS55165501A (en) * 1979-06-12 1980-12-24 Matsushita Electric Ind Co Ltd Method of manufacturing gas diffusion electrode
DE2933835A1 (de) * 1979-08-21 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum befestigen von in scheiben- oder plattenform vorliegenden targetmaterialien auf kuehlteller fuer aufstaeubanlagen
CH646459A5 (de) * 1982-03-22 1984-11-30 Balzers Hochvakuum Rechteckige targetplatte fuer kathodenzerstaeubungsanlagen.
JPS6078424A (ja) * 1983-10-05 1985-05-04 Matsushita Electric Ind Co Ltd 光学発色素子
JPS60221569A (ja) * 1984-04-19 1985-11-06 Koujiyundo Kagaku Kenkyusho:Kk 電気的蒸着用タ−ゲツト
JPS61104073A (ja) * 1984-10-26 1986-05-22 Matsushita Electric Ind Co Ltd スパツタリング装置のスパツタガン
JPS62243762A (ja) * 1986-04-16 1987-10-24 Seiko Epson Corp スパツタリングタ−ゲツト用バツキングプレ−ト
KR900009071B1 (ko) * 1986-05-28 1990-12-20 가부시기가이샤 히다찌세이사구쇼 함침형 음극
JPS63195259A (ja) * 1987-02-06 1988-08-12 Sumitomo Electric Ind Ltd 二硫化モリブデン薄膜の形成方法
JPS63247360A (ja) * 1987-03-31 1988-10-14 Sumitomo Electric Ind Ltd スパツタ用タ−ゲツト
EP0342537B1 (de) * 1988-05-16 1995-09-06 Tosoh Corporation Verfahren zur Herstellung eines Sputtertargets zur Erzeugung einer elektrisch leitenden, durchsichtigen Schicht
JPH0243356A (ja) * 1988-08-04 1990-02-13 Tosoh Corp 透明導電膜用スパッタリングターゲットの製造方法
US5190630A (en) * 1989-03-01 1993-03-02 Kabushiki Kaisha Toshiba Sputtering target
US5086351A (en) * 1989-07-13 1992-02-04 M&T Chemicals, Inc. Electrochromic elements, materials for use in such element, processes for making such elements and such materials and use of such element in an electrochromic glass device
JPH0774436B2 (ja) * 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法

Also Published As

Publication number Publication date
FR2680799A1 (fr) 1993-03-05
ATE145944T1 (de) 1996-12-15
EP0602150A1 (de) 1994-06-22
WO1993005195A1 (fr) 1993-03-18
EP0602150B1 (de) 1996-12-04
FR2680799B1 (fr) 1993-10-29
US5522976A (en) 1996-06-04
JPH06510090A (ja) 1994-11-10
CA2116776A1 (fr) 1993-03-18

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Legal Events

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8332 No legal effect for de