ATE224964T1 - Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallen - Google Patents
Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallenInfo
- Publication number
- ATE224964T1 ATE224964T1 AT94922946T AT94922946T ATE224964T1 AT E224964 T1 ATE224964 T1 AT E224964T1 AT 94922946 T AT94922946 T AT 94922946T AT 94922946 T AT94922946 T AT 94922946T AT E224964 T1 ATE224964 T1 AT E224964T1
- Authority
- AT
- Austria
- Prior art keywords
- pct
- group iiia
- substrate
- metals
- group iii
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 5
- 229910052751 metal Inorganic materials 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 150000002739 metals Chemical class 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- -1 butyl compound Chemical class 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910017115 AlSb Inorganic materials 0.000 abstract 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910000756 V alloy Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
- C23C18/10—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB939315771A GB9315771D0 (en) | 1993-07-30 | 1993-07-30 | Method of depositing thin metal films |
| PCT/GB1994/001654 WO1995004168A1 (en) | 1993-07-30 | 1994-07-29 | Method of depositing thin group iiia metal films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE224964T1 true ATE224964T1 (de) | 2002-10-15 |
Family
ID=10739683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT94922946T ATE224964T1 (de) | 1993-07-30 | 1994-07-29 | Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallen |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5863836A (de) |
| EP (1) | EP0804631B1 (de) |
| JP (1) | JPH09501985A (de) |
| KR (1) | KR100352726B1 (de) |
| CN (1) | CN1072735C (de) |
| AT (1) | ATE224964T1 (de) |
| AU (1) | AU686207B2 (de) |
| CA (1) | CA2168214A1 (de) |
| DE (2) | DE804631T1 (de) |
| GB (1) | GB9315771D0 (de) |
| WO (1) | WO1995004168A1 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130160A (en) | 1996-10-02 | 2000-10-10 | Micron Technology, Inc. | Methods, complexes and system for forming metal-containing films |
| US5924012A (en) | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
| US6214729B1 (en) | 1998-09-01 | 2001-04-10 | Micron Technology, Inc. | Metal complexes with chelating C-, N-donor ligands for forming metal-containing films |
| US6281124B1 (en) | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
| US7419698B2 (en) * | 2001-10-26 | 2008-09-02 | Sigma-Aldrich Co. | Precursors for chemical vapor deposition |
| JP2003252878A (ja) | 2002-01-17 | 2003-09-10 | Shipley Co Llc | 有機インジウム化合物 |
| JP4110973B2 (ja) * | 2003-01-17 | 2008-07-02 | Ｊｓｒ株式会社 | シリコン−アルミニウム混合膜形成用組成物、シリコン−アルミニウム混合膜およびその形成方法 |
| US7390535B2 (en) | 2003-07-03 | 2008-06-24 | Aeromet Technologies, Inc. | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings |
| DE102009053818A1 (de) * | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen |
| US8894760B2 (en) * | 2009-11-20 | 2014-11-25 | Rohm And Haas Electronic Materials Llc | Group 3a ink and methods of making and using same |
| US8709917B2 (en) | 2010-05-18 | 2014-04-29 | Rohm And Haas Electronic Materials Llc | Selenium/group 3A ink and methods of making and using same |
| US8119506B2 (en) | 2010-05-18 | 2012-02-21 | Rohm And Haas Electronic Materials Llc | Group 6a/group 3a ink and methods of making and using same |
| US8372485B2 (en) | 2011-02-18 | 2013-02-12 | Rohm And Haas Electronic Materials Llc | Gallium ink and methods of making and using same |
| US8343267B2 (en) | 2011-02-18 | 2013-01-01 | Rohm And Haas Electronic Materials Llc | Gallium formulated ink and methods of making and using same |
| US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
| US9982345B2 (en) * | 2015-07-14 | 2018-05-29 | Applied Materials, Inc. | Deposition of metal films using beta-hydrogen free precursors |
| US10204790B2 (en) | 2015-07-28 | 2019-02-12 | Asm Ip Holding B.V. | Methods for thin film deposition |
| US11421321B2 (en) | 2015-07-28 | 2022-08-23 | Asm Ip Holding B.V. | Apparatuses for thin film deposition |
| US10118828B2 (en) | 2015-10-02 | 2018-11-06 | Asm Ip Holding B.V. | Tritertbutyl aluminum reactants for vapor deposition |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| JP6517956B2 (ja) * | 2018-01-12 | 2019-05-22 | 旭化成エレクトロニクス株式会社 | 化合物半導体基板 |
| EP3666782A1 (de) | 2018-12-11 | 2020-06-17 | Umicore Ag & Co. Kg | Lithiumalkylaluminate, verwendung eines lithiumalkylaluminats als transferreagenz, verfahren zur übertragung wenigstens eines restes r, verbindungen e(x)q-prp und deren verwendung, substrat und verfahren zur herstellung von lithiumalkylaluminaten |
| JP7581213B2 (ja) | 2019-01-28 | 2024-11-12 | ラム リサーチ コーポレーション | 金属膜の蒸着 |
| KR102917783B1 (ko) * | 2019-08-22 | 2026-01-26 | 램 리써치 코포레이션 | 반도체 디바이스 제작시 실질적으로 탄소-프리 몰리브덴-함유 막들 및 텅스텐-함유 막들 |
| KR20220053668A (ko) | 2019-09-03 | 2022-04-29 | 램 리써치 코포레이션 | 몰리브덴 증착 |
| JP2022551965A (ja) | 2019-10-15 | 2022-12-14 | ラム リサーチ コーポレーション | モリブデン充填 |
| TWI889919B (zh) | 2020-10-21 | 2025-07-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於可流動間隙填充之方法及裝置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3620189A (en) * | 1970-04-06 | 1971-11-16 | Continental Oil Co | Apparatus for plating aluminum on wire |
| GB2038883B (en) * | 1978-11-09 | 1982-12-08 | Standard Telephones Cables Ltd | Metallizing semiconductor devices |
| DE3631469A1 (de) * | 1986-09-16 | 1988-03-17 | Merck Patent Gmbh | Metallorganische verbindungen |
| US4923717A (en) * | 1989-03-17 | 1990-05-08 | Regents Of The University Of Minnesota | Process for the chemical vapor deposition of aluminum |
| EP0448223B1 (de) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
| US5376409B1 (en) * | 1992-12-21 | 1997-06-03 | Univ New York State Res Found | Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials |
-
1993
- 1993-07-30 GB GB939315771A patent/GB9315771D0/en active Pending
-
1994
- 1994-07-29 DE DE0804631T patent/DE804631T1/de active Pending
- 1994-07-29 JP JP7505673A patent/JPH09501985A/ja not_active Withdrawn
- 1994-07-29 EP EP94922946A patent/EP0804631B1/de not_active Expired - Lifetime
- 1994-07-29 US US08/586,735 patent/US5863836A/en not_active Expired - Lifetime
- 1994-07-29 CN CN94193375A patent/CN1072735C/zh not_active Expired - Fee Related
- 1994-07-29 AT AT94922946T patent/ATE224964T1/de not_active IP Right Cessation
- 1994-07-29 AU AU72674/94A patent/AU686207B2/en not_active Ceased
- 1994-07-29 KR KR1019960700495A patent/KR100352726B1/ko not_active Expired - Fee Related
- 1994-07-29 CA CA002168214A patent/CA2168214A1/en not_active Abandoned
- 1994-07-29 DE DE69431443T patent/DE69431443T2/de not_active Expired - Fee Related
- 1994-07-29 WO PCT/GB1994/001654 patent/WO1995004168A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09501985A (ja) | 1997-02-25 |
| WO1995004168A1 (en) | 1995-02-09 |
| EP0804631B1 (de) | 2002-09-25 |
| CN1072735C (zh) | 2001-10-10 |
| CN1130924A (zh) | 1996-09-11 |
| EP0804631A1 (de) | 1997-11-05 |
| DE804631T1 (de) | 1998-03-05 |
| CA2168214A1 (en) | 1995-02-09 |
| AU686207B2 (en) | 1998-02-05 |
| US5863836A (en) | 1999-01-26 |
| DE69431443T2 (de) | 2003-05-22 |
| KR960704085A (ko) | 1996-08-31 |
| GB9315771D0 (en) | 1993-09-15 |
| KR100352726B1 (ko) | 2002-11-07 |
| AU7267494A (en) | 1995-02-28 |
| DE69431443D1 (de) | 2002-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE224964T1 (de) | Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallen | |
| DE900287T1 (de) | Substrate mit einer extrem harten beschictung, die bor und stickstoff enhaltet,und verfahren zu deren herstellung. | |
| EP1347504A3 (de) | Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge | |
| ATE10953T1 (de) | Ablagerungsverfahren fuer eine harte metallschicht und ablagerungsart fuer ein solches verfahren, insbesondere ein schmuckstueck mit solch einer schicht. | |
| EP0377940A3 (de) | Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes | |
| CA2055306A1 (en) | Hydrogen silsesquioxane resin fractions and their use as coating materials | |
| NO20004651L (no) | FremgangsmÕte for beskyttelse av et metallisk substrat mot korrosjon | |
| EP0384072A3 (de) | Verbundstoff mit einem anorganischen Bild und Verfahren zur Übertragung dieses Bildes | |
| DE69215686D1 (de) | Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist | |
| DE69623020D1 (de) | Verfahren zum becshichten,verfahren zur herstellung von keramik-metall-strukturen, verfahren zum verbinden und so gebildete strukturen. | |
| BR9306701A (pt) | Processo e composições de revestimento | |
| DE68910731D1 (de) | Verfahren zum Aufbringen einer schwarzen Beschichtung auf ein Substrat, sowie dadurch erhaltene schwarze Beschichtung. | |
| FR2631346B1 (fr) | Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications | |
| ATE143061T1 (de) | Verfahren zur herstellung einer silizium- enthaltenden schicht auf ein metallisches substrat sowie anti-korrosionsbehandlung | |
| ATE150805T1 (de) | Verfahren zur metallisierung von nichtleitenden substraten | |
| EP0845804A3 (de) | Substratvorbehandlung vor der Abscheidung eines isolierenden Filmes | |
| ATE17751T1 (de) | Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen. | |
| MY110954A (en) | Diffusion barrier layers | |
| CA2115716A1 (en) | Method for Forming a Patterned Oxide Superconductor Thin Film | |
| KR970052543A (ko) | 바이어스 전압이 인가된 Cu 박막 형성방법 | |
| FI853232A7 (fi) | Menetelmä ja laite ohuen, ainakin yhden kationisen aineosan ja ainakin yhden anionisen aineosan sisältävää yhdistettä oleva kerroksen saostamiseksi substraatille. | |
| GB1537298A (en) | Method of producing a metal layer on a substrate | |
| PL306714A1 (en) | Method of coating internal surface of pipes, in particular those made of alluminium, with resinous products and pipes obtained thereby | |
| JPS6486577A (en) | Preparation of superconductive oxide film | |
| EP0993029A3 (de) | Verfahren zur Herstellung kristalliner Halbleiterschichten |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |