DE69209970D1 - Höckerelektrodenstruktur und Halbleiterchip mit dieser Struktur - Google Patents

Höckerelektrodenstruktur und Halbleiterchip mit dieser Struktur

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Publication number
DE69209970D1
DE69209970D1 DE69209970T DE69209970T DE69209970D1 DE 69209970 D1 DE69209970 D1 DE 69209970D1 DE 69209970 T DE69209970 T DE 69209970T DE 69209970 T DE69209970 T DE 69209970T DE 69209970 D1 DE69209970 D1 DE 69209970D1
Authority
DE
Germany
Prior art keywords
semiconductor chip
bump electrode
electrode structure
bump
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209970T
Other languages
English (en)
Other versions
DE69209970T2 (de
Inventor
Akira Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69209970D1 publication Critical patent/DE69209970D1/de
Application granted granted Critical
Publication of DE69209970T2 publication Critical patent/DE69209970T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69209970T 1991-10-30 1992-10-28 Höckerelektrodenstruktur und Halbleiterchip mit dieser Struktur Expired - Fee Related DE69209970T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03283367A JP3077316B2 (ja) 1991-10-30 1991-10-30 集積回路装置

Publications (2)

Publication Number Publication Date
DE69209970D1 true DE69209970D1 (de) 1996-05-23
DE69209970T2 DE69209970T2 (de) 1996-12-12

Family

ID=17664582

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209970T Expired - Fee Related DE69209970T2 (de) 1991-10-30 1992-10-28 Höckerelektrodenstruktur und Halbleiterchip mit dieser Struktur

Country Status (4)

Country Link
US (1) US5289038A (de)
EP (1) EP0540312B1 (de)
JP (1) JP3077316B2 (de)
DE (1) DE69209970T2 (de)

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US5719448A (en) * 1989-03-07 1998-02-17 Seiko Epson Corporation Bonding pad structures for semiconductor integrated circuits
JP2792532B2 (ja) 1994-09-30 1998-09-03 日本電気株式会社 半導体装置の製造方法及び半導体ウエハー
US5587336A (en) * 1994-12-09 1996-12-24 Vlsi Technology Bump formation on yielded semiconductor dies
JP2830903B2 (ja) * 1995-07-21 1998-12-02 日本電気株式会社 半導体デバイスの製造方法
DE19632626A1 (de) * 1996-08-13 1998-02-19 Siemens Ag Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge
JP3695893B2 (ja) 1996-12-03 2005-09-14 沖電気工業株式会社 半導体装置とその製造方法および実装方法
US5929521A (en) * 1997-03-26 1999-07-27 Micron Technology, Inc. Projected contact structure for bumped semiconductor device and resulting articles and assemblies
US7390732B1 (en) * 1997-07-15 2008-06-24 Hitachi, Ltd. Method for producing a semiconductor device with pyramidal bump electrodes bonded onto pad electrodes arranged on a semiconductor chip
US6031293A (en) * 1999-04-26 2000-02-29 United Microelectronics Corporation Package-free bonding pad structure
US6434817B1 (en) * 1999-12-03 2002-08-20 Delphi Technologies, Inc. Method for joining an integrated circuit
JP3967239B2 (ja) * 2001-09-20 2007-08-29 株式会社フジクラ 充填金属部付き部材の製造方法及び充填金属部付き部材
US20050085062A1 (en) * 2003-10-15 2005-04-21 Semitool, Inc. Processes and tools for forming lead-free alloy solder precursors
KR20070045359A (ko) 2004-08-31 2007-05-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 적어도 하나의 테스트 컨택트 구조를 포함하는 칩과 이를포함한 웨이퍼
KR100630736B1 (ko) * 2005-01-28 2006-10-02 삼성전자주식회사 반도체 소자의 범프 및 제조 방법
JP2006222374A (ja) * 2005-02-14 2006-08-24 Fuji Film Microdevices Co Ltd 半導体チップ
JP2006339342A (ja) * 2005-06-01 2006-12-14 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
CN101989590B (zh) * 2009-07-30 2012-11-14 瀚宇彩晶股份有限公司 凸块结构
JP5611682B2 (ja) * 2010-06-21 2014-10-22 京セラ株式会社 弾性波装置
FR2969381A1 (fr) * 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Puce electronique comportant des piliers de connexion, et procede de fabrication
FR2978296A1 (fr) * 2011-07-20 2013-01-25 St Microelectronics Crolles 2 Puce electronique comportant des piliers de connexion, et procede de fabrication
US20180082967A1 (en) * 2016-09-21 2018-03-22 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
DE102016222913A1 (de) * 2016-11-21 2018-05-24 Robert Bosch Gmbh Gassensor mit einem Halbleitersubstrat mit mindestens einer Isolationsschicht und einer Leiterbahn

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Publication number Priority date Publication date Assignee Title
US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same
US3839727A (en) * 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor
US4163988A (en) * 1978-01-30 1979-08-07 Xerox Corporation Split gate V groove FET
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices

Also Published As

Publication number Publication date
EP0540312B1 (de) 1996-04-17
US5289038A (en) 1994-02-22
JP3077316B2 (ja) 2000-08-14
DE69209970T2 (de) 1996-12-12
EP0540312A1 (de) 1993-05-05
JPH05121409A (ja) 1993-05-18

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