DE69133388D1 - Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen - Google Patents

Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen

Info

Publication number
DE69133388D1
DE69133388D1 DE69133388T DE69133388T DE69133388D1 DE 69133388 D1 DE69133388 D1 DE 69133388D1 DE 69133388 T DE69133388 T DE 69133388T DE 69133388 T DE69133388 T DE 69133388T DE 69133388 D1 DE69133388 D1 DE 69133388D1
Authority
DE
Germany
Prior art keywords
manufacturing
source lines
semiconductor structures
quantum source
quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69133388T
Other languages
English (en)
Other versions
DE69133388T2 (de
Inventor
Thomas I Paoli
John E Epler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69133388D1 publication Critical patent/DE69133388D1/de
Publication of DE69133388T2 publication Critical patent/DE69133388T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
DE69133388T 1990-06-25 1991-06-25 Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen Expired - Lifetime DE69133388T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/542,857 US5362973A (en) 1990-06-25 1990-06-25 Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
US542857 1990-06-25

Publications (2)

Publication Number Publication Date
DE69133388D1 true DE69133388D1 (de) 2004-06-24
DE69133388T2 DE69133388T2 (de) 2004-09-16

Family

ID=24165575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133388T Expired - Lifetime DE69133388T2 (de) 1990-06-25 1991-06-25 Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen

Country Status (5)

Country Link
US (2) US5362973A (de)
EP (1) EP0469712B1 (de)
JP (1) JP3188728B2 (de)
CA (1) CA2041942C (de)
DE (1) DE69133388T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
US5694059A (en) * 1991-12-24 1997-12-02 Hitachi Ltd. Buffer of fine connection structure for connecting an atom level circuit and a general semiconductor circuit
GB2299707B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a semiconductor device
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
US6011271A (en) * 1994-04-28 2000-01-04 Fujitsu Limited Semiconductor device and method of fabricating the same
DE69525128T2 (de) 1994-10-26 2002-09-05 Mitsubishi Chem Corp Lichtemittierende Halbleiteranordnung und Herstellungsverfahren
US5889913A (en) * 1995-03-15 1999-03-30 Kabushiki Kaisha Toshiba Optical semiconductor device and method of fabricating the same
DE19522351A1 (de) * 1995-06-20 1997-01-09 Max Planck Gesellschaft Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
JP3320641B2 (ja) * 1996-09-13 2002-09-03 株式会社東芝 メモリセル
KR100238452B1 (ko) * 1997-08-05 2000-01-15 정선종 초미세 구조 일괄 성장방법
KR100506943B1 (ko) * 2003-09-09 2005-08-05 삼성전자주식회사 식각정지막으로 연결홀의 저측면에 경사를 갖는 반도체소자의 제조 방법들
US8760786B2 (en) 2012-06-25 2014-06-24 Oracle International Corporation Lateral tape motion detector

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4581621A (en) * 1984-07-02 1986-04-08 Texas Instruments Incorporated Quantum device output switch
US4733282A (en) * 1985-08-13 1988-03-22 International Business Machines Corporation One-dimensional quantum pipeline type carrier path semiconductor devices
JP2531655B2 (ja) * 1987-01-16 1996-09-04 株式会社日立製作所 半導体装置
JPH0797661B2 (ja) * 1987-09-29 1995-10-18 沖電気工業株式会社 発光ダイオードおよびその製造方法
JPH0231479A (ja) * 1988-07-21 1990-02-01 Nec Corp 半導体量子箱構造の製造方法
US4962057A (en) * 1988-10-13 1990-10-09 Xerox Corporation Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
US5013684A (en) * 1989-03-24 1991-05-07 Xerox Corporation Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth

Also Published As

Publication number Publication date
DE69133388T2 (de) 2004-09-16
JPH04243124A (ja) 1992-08-31
EP0469712B1 (de) 2004-05-19
US5436191A (en) 1995-07-25
CA2041942A1 (en) 1991-12-26
JP3188728B2 (ja) 2001-07-16
EP0469712A1 (de) 1992-02-05
CA2041942C (en) 1996-06-18
US5362973A (en) 1994-11-08

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