DE69133267D1 - Hochreines Hafnium und dessen Verwendung als Sputtertarget - Google Patents

Hochreines Hafnium und dessen Verwendung als Sputtertarget

Info

Publication number
DE69133267D1
DE69133267D1 DE69133267T DE69133267T DE69133267D1 DE 69133267 D1 DE69133267 D1 DE 69133267D1 DE 69133267 T DE69133267 T DE 69133267T DE 69133267 T DE69133267 T DE 69133267T DE 69133267 D1 DE69133267 D1 DE 69133267D1
Authority
DE
Germany
Prior art keywords
high purity
sputtering target
purity hafnium
hafnium
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133267T
Other languages
English (en)
Other versions
DE69133267T2 (de
Inventor
Takashi Ishigami
Minoru Obata
Mituo Kawai
Michio Satou
Takashi Yamanobe
Toshihiro Maki
Noriaki Yagi
Shigeru Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69133267D1 publication Critical patent/DE69133267D1/de
Publication of DE69133267T2 publication Critical patent/DE69133267T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/1263—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
    • C22B34/1268—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
    • C22B34/1272—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams reduction of titanium halides, e.g. Kroll process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/129—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds by dissociation, e.g. thermic dissociation of titanium tetraiodide, or by electrolysis or with the use of an electric arc
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/1295—Refining, melting, remelting, working up of titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/16—Remelting metals
    • C22B9/22—Remelting metals with heating by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69133267T 1990-02-15 1991-02-15 Hochreines Hafnium und dessen Verwendung als Sputtertarget Expired - Fee Related DE69133267T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3690890 1990-02-15
JP3690890 1990-02-15

Publications (2)

Publication Number Publication Date
DE69133267D1 true DE69133267D1 (de) 2003-06-26
DE69133267T2 DE69133267T2 (de) 2004-04-08

Family

ID=12482879

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69132504T Expired - Fee Related DE69132504T2 (de) 1990-02-15 1991-02-15 Verfahren zur Herstellung von hochreinem Titan und von einem Zerstäubungstarget
DE69133267T Expired - Fee Related DE69133267T2 (de) 1990-02-15 1991-02-15 Hochreines Hafnium und dessen Verwendung als Sputtertarget

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69132504T Expired - Fee Related DE69132504T2 (de) 1990-02-15 1991-02-15 Verfahren zur Herstellung von hochreinem Titan und von einem Zerstäubungstarget

Country Status (4)

Country Link
US (3) US5196916A (de)
EP (4) EP0915176A1 (de)
KR (1) KR940008936B1 (de)
DE (2) DE69132504T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62280335A (ja) * 1986-05-30 1987-12-05 Toshiba Corp 薄膜形成用高純度チタン材、それを用いて形成されてなるターゲットおよび薄膜、および薄膜形成用高純度チタン材の製造方法
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
KR970009274B1 (ko) * 1991-11-11 1997-06-09 미쓰비시덴키 가부시키가이샤 반도체장치의 도전층접속구조 및 그 제조방법
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
JPH05295531A (ja) * 1992-04-21 1993-11-09 Toshiba Corp Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法
US5849417A (en) * 1994-09-12 1998-12-15 Japan Energy Corporation Titanium implantation materials for the living body
DE19609439A1 (de) * 1995-03-14 1996-09-19 Japan Energy Corp Verfahren zum Erzeugen von hochreinem Kobalt und Sputtering-Targets aus hochreinem Kobalt
JP3413782B2 (ja) * 1995-03-31 2003-06-09 日立金属株式会社 スパッタリング用チタンタ−ゲットおよびその製造方法
JP2679680B2 (ja) * 1995-04-24 1997-11-19 日本電気株式会社 半導体装置の製造方法
JPH0923005A (ja) * 1995-07-06 1997-01-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2863469B2 (ja) * 1995-10-06 1999-03-03 株式会社住友シチックス尼崎 高純度チタン材の製造方法
US5612558A (en) * 1995-11-15 1997-03-18 Micron Technology, Inc. Hemispherical grained silicon on refractory metal nitride
FR2756572B1 (fr) * 1996-12-04 1999-01-08 Pechiney Aluminium Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques
US6024847A (en) * 1997-04-30 2000-02-15 The Alta Group, Inc. Apparatus for producing titanium crystal and titanium
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6309595B1 (en) 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
JPH10330932A (ja) * 1997-05-28 1998-12-15 Anelva Corp スパッタリング装置
US6001227A (en) 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US6210502B1 (en) 1997-12-24 2001-04-03 Toho Titanium Co., Ltd. Processing method for high-pure titanium
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
WO2001038598A1 (fr) * 1999-11-22 2001-05-31 Nikko Materials Company, Limited Cible en titane pour la pulverisation cathodique
JP2001279432A (ja) * 2000-01-27 2001-10-10 Mitsui Mining & Smelting Co Ltd 低酸素スパッタリングターゲット
KR100572262B1 (ko) 2000-10-02 2006-04-19 가부시키 가이샤 닛코 마테리알즈 고순도 지르코늄 또는 하프늄의 제조방법
US6833058B1 (en) 2000-10-24 2004-12-21 Honeywell International Inc. Titanium-based and zirconium-based mixed materials and sputtering targets
JP4596379B2 (ja) * 2001-07-09 2010-12-08 Ｊｘ日鉱日石金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット
JP3995082B2 (ja) * 2001-07-18 2007-10-24 日鉱金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法
KR100611904B1 (ko) * 2002-08-06 2006-08-11 닛코킨조쿠 가부시키가이샤 하프늄 시리사이드 타겟트 및 그 제조방법
JP4388263B2 (ja) * 2002-09-11 2009-12-24 日鉱金属株式会社 珪化鉄スパッタリングターゲット及びその製造方法
KR100698744B1 (ko) * 2003-03-07 2007-03-23 닛코킨조쿠 가부시키가이샤 하프늄 합금 타겟트 및 그 제조방법
WO2005010220A1 (ja) * 2003-07-25 2005-02-03 Nikko Materials Co., Ltd. 高純度ハフニウム材料、同材料からなるターゲット及び薄膜並びに高純度ハフニウムの製造方法
CN1882711B (zh) * 2003-11-19 2010-05-12 日矿金属株式会社 高纯度铪、由该高纯度铪形成的靶及薄膜和高纯度铪的制造方法
EP1559485A1 (de) * 2004-01-30 2005-08-03 Siemens Aktiengesellschaft Verfahren zur Entfernung einer Schicht
KR100968396B1 (ko) * 2005-07-07 2010-07-07 닛코 킨조쿠 가부시키가이샤 고순도 하프늄, 고순도 하프늄으로 이루어지는 타겟 및박막 그리고 고순도 하프늄의 제조 방법
LV13528B (en) * 2006-09-25 2007-03-20 Ervins Blumbergs Method and apparatus for continuous producing of metallic tifanium and titanium-bases alloys
KR101047495B1 (ko) * 2009-11-18 2011-07-07 한국기계연구원 고순도 지르코늄 금속분말의 제조방법, 및 이에 의한 고순도 지르코늄 금속분말의 제조장치
JP5847207B2 (ja) 2012-02-14 2016-01-20 Jx日鉱日石金属株式会社 チタンインゴット、チタンインゴットの製造方法及びチタンスパッタリングターゲットの製造方法
CN103713169B (zh) * 2013-12-23 2016-09-21 上海金陵智能电表有限公司 一种感应式电能表
KR20160138208A (ko) 2014-03-31 2016-12-02 가부시끼가이샤 도시바 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃
CN105632745A (zh) * 2014-10-27 2016-06-01 国家电网公司 一种用于变压器的半导体导电材料的生产工艺
US10287175B1 (en) * 2015-12-30 2019-05-14 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for purification and storage of Til4 for Ti-containing film deposition
CN112725641A (zh) * 2019-10-15 2021-04-30 有研资源环境技术研究院(北京)有限公司 一种高纯金属钒的制备方法
CN111154978A (zh) * 2019-12-30 2020-05-15 江智秦 一种稀有金属碘化提纯方法
WO2024049324A1 (ru) * 2022-08-29 2024-03-07 Акционерное общество "Чепецкий механический завод" Способ получения гафния методом йодидного рафинирования

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE555761A (de) * 1956-03-13
US3654526A (en) * 1970-05-19 1972-04-04 Texas Instruments Inc Metallization system for semiconductors
FR2359221A1 (fr) * 1976-07-23 1978-02-17 Anvar Procede de fabrication de titane par reduction electrolytique dans un bain de sels fondus d'halogenures de titane
US4368072A (en) * 1979-03-12 1983-01-11 Teledyne Industries, Inc. Iodide cell vapor pressure control
JPS5830147A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置
JPS6066425A (ja) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｌｓｉ電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
JPH0697667B2 (ja) * 1983-10-21 1994-11-30 セイコーエプソン株式会社 半導体装置の製造方法
JPS60208430A (ja) * 1984-03-30 1985-10-21 Toyo Soda Mfg Co Ltd 金属沃化物から高純度金属の製造法
JPS61143530A (ja) * 1984-12-17 1986-07-01 Nippon Nuclear Fuel Dev Co Ltd 高純度ジルコニウムの製造方法
US4725872A (en) * 1985-02-25 1988-02-16 Tektronix, Inc. Fast channel single phase buried channel CCD
CA1216962A (en) * 1985-06-28 1987-01-20 Hussein M. Naguib Mos device processing
JPH0611076B2 (ja) * 1985-10-08 1994-02-09 三菱電機株式会社 半導体装置の製造方法
JPH062588B2 (ja) * 1986-02-12 1994-01-12 東ソー株式会社 超高純度沃化チタンの製造方法
JPS62280335A (ja) * 1986-05-30 1987-12-05 Toshiba Corp 薄膜形成用高純度チタン材、それを用いて形成されてなるターゲットおよび薄膜、および薄膜形成用高純度チタン材の製造方法
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
JPS6381948A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 多層配線半導体装置
US4782380A (en) * 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
JPS63230834A (ja) * 1987-03-20 1988-09-27 Hitachi Metals Ltd 高温反応室内観察窓
US4788160A (en) * 1987-03-31 1988-11-29 Texas Instruments Incorporated Process for formation of shallow silicided junctions
US4816214A (en) * 1987-10-22 1989-03-28 Westinghouse Electric Corp. Ultra slow EB melting to reduce reactor cladding
US5019891A (en) * 1988-01-20 1991-05-28 Hitachi, Ltd. Semiconductor device and method of fabricating the same
US5027185A (en) * 1988-06-06 1991-06-25 Industrial Technology Research Institute Polycide gate FET with salicide
JPH0622218B2 (ja) * 1988-08-06 1994-03-23 富士通株式会社 エッチング方法
US4897287A (en) * 1988-10-06 1990-01-30 The Boc Group, Inc. Metallization process for an integrated circuit
KR930004295B1 (ko) * 1988-12-24 1993-05-22 삼성전자 주식회사 Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법
JP2537413B2 (ja) * 1989-03-14 1996-09-25 三菱電機株式会社 半導体装置およびその製造方法
US4997518A (en) * 1989-03-31 1991-03-05 Oki Electric Industry Co., Ltd. Method for forming an electrode layer by a laser flow technique
US4920073A (en) * 1989-05-11 1990-04-24 Texas Instruments, Incorporated Selective silicidation process using a titanium nitride protective layer
JPH07103432B2 (ja) * 1989-07-14 1995-11-08 株式会社東芝 半導体素子形成用高純度チタン材、高純度チタン材の製造方法、それを用いたスパッタターゲットおよび高純度チタン膜
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5175126A (en) * 1990-12-27 1992-12-29 Intel Corporation Process of making titanium nitride barrier layer
US5345108A (en) * 1991-02-26 1994-09-06 Nec Corporation Semiconductor device having multi-layer electrode wiring
EP0545327A1 (de) * 1991-12-02 1993-06-09 Matsushita Electric Industrial Co., Ltd. Dünnschichttransistoranordnung für den Gebrauch in einer Flüssigkristallanzeige

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DE69133267T2 (de) 2004-04-08
DE69132504D1 (de) 2001-02-15
KR920000112A (ko) 1992-01-10
EP0915177A1 (de) 1999-05-12
EP0915176A1 (de) 1999-05-12
US5679983A (en) 1997-10-21
EP0915178A3 (de) 1999-05-26
US5458697A (en) 1995-10-17
EP0915178A2 (de) 1999-05-12
DE69132504T2 (de) 2001-06-07
EP0915177B1 (de) 2003-05-21
EP0442752B1 (de) 2001-01-10
KR940008936B1 (ko) 1994-09-28
US5196916A (en) 1993-03-23
EP0442752A1 (de) 1991-08-21

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