DE69120842D1 - Photolackzusammensetzung und Strukturierungsmethode - Google Patents

Photolackzusammensetzung und Strukturierungsmethode

Info

Publication number
DE69120842D1
DE69120842D1 DE69120842T DE69120842T DE69120842D1 DE 69120842 D1 DE69120842 D1 DE 69120842D1 DE 69120842 T DE69120842 T DE 69120842T DE 69120842 T DE69120842 T DE 69120842T DE 69120842 D1 DE69120842 D1 DE 69120842D1
Authority
DE
Germany
Prior art keywords
photoresist composition
structuring method
structuring
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120842T
Other languages
English (en)
Other versions
DE69120842T2 (de
Inventor
Akiko Kotachi
Satoshi Takechi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69120842D1 publication Critical patent/DE69120842D1/de
Publication of DE69120842T2 publication Critical patent/DE69120842T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process
DE69120842T 1990-03-13 1991-03-06 Photolackzusammensetzung und Strukturierungsmethode Expired - Fee Related DE69120842T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2061552A JP2707785B2 (ja) 1990-03-13 1990-03-13 レジスト組成物およびパターン形成方法

Publications (2)

Publication Number Publication Date
DE69120842D1 true DE69120842D1 (de) 1996-08-22
DE69120842T2 DE69120842T2 (de) 1996-11-21

Family

ID=13174393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120842T Expired - Fee Related DE69120842T2 (de) 1990-03-13 1991-03-06 Photolackzusammensetzung und Strukturierungsmethode

Country Status (5)

Country Link
US (1) US5153103A (de)
EP (1) EP0447111B1 (de)
JP (1) JP2707785B2 (de)
KR (1) KR940002549B1 (de)
DE (1) DE69120842T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442229A (ja) * 1990-06-08 1992-02-12 Fujitsu Ltd レジスト材料およびパターンの形成方法
JP2980149B2 (ja) * 1993-09-24 1999-11-22 富士通株式会社 レジスト材料およびパターン形成方法
US5470681A (en) * 1993-12-23 1995-11-28 International Business Machines Corporation Phase shift mask using liquid phase oxide deposition
KR0154164B1 (ko) * 1994-07-11 1998-12-01 김주용 반도체소자의 제조방법
US5705570A (en) * 1995-06-07 1998-01-06 International Business Machines Corporation Ablatively photodecomposable compositions
US5586984A (en) * 1995-07-13 1996-12-24 Fastenetix, L.L.C. Polyaxial locking screw and coupling element assembly for use with rod fixation apparatus
US5789140A (en) * 1996-04-25 1998-08-04 Fujitsu Limited Method of forming a pattern or via structure utilizing supplemental electron beam exposure and development to remove image residue
US5660957A (en) * 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US6358675B1 (en) * 1998-10-02 2002-03-19 3M Innovative Properties Company Silicon-containing alcohols and polymers having silicon-containing tertiary ester groups made therefrom
US6683202B2 (en) 2001-02-22 2004-01-27 Tokyo Ohka, Kogyo Co., Ltd. Fluorine-containing monomeric ester compound for base resin in photoresist composition
DE10233849B4 (de) 2002-07-22 2005-07-21 Infineon Technologies Ag Polymerisierbare Zusammensetzung, Polymer, Resist und Lithographieverfahren
KR100564565B1 (ko) * 2002-11-14 2006-03-28 삼성전자주식회사 실리콘을 함유하는 폴리머 및 이를 포함하는 네가티브형레지스트 조성물과 이들을 이용한 반도체 소자의 패턴형성 방법
US20100203450A1 (en) * 2009-02-11 2010-08-12 International Business Machines Corporation Photoresist compositions and methods of use

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1500541A (en) * 1975-03-20 1978-02-08 Mullard Ltd Method of producing positive-working electron resist coatings
EP0016679B1 (de) * 1979-03-09 1982-06-09 Thomson-Csf Substanzen für Photolacke, ihre Herstellung und positive Photolackschicht
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
DE3279090D1 (en) * 1981-12-19 1988-11-10 Daikin Ind Ltd Resist material and process for forming fine resist pattern
JPS59197036A (ja) * 1982-06-28 1984-11-08 Nissan Chem Ind Ltd パタ−ン形成用材料
JPS60252348A (ja) * 1984-05-29 1985-12-13 Fujitsu Ltd パタ−ン形成方法
JPS6141142A (ja) * 1984-08-02 1986-02-27 Kuraray Co Ltd ポジ型レジスト材料
JPS6279445A (ja) * 1985-10-03 1987-04-11 Toyo Soda Mfg Co Ltd レジスト材料
US4701342A (en) * 1986-03-06 1987-10-20 American Telephone And Telegraph Company, At&T Bell Laboratories Negative resist with oxygen plasma resistance
JPS6443512A (en) * 1987-08-10 1989-02-15 Daikin Ind Ltd Phenyl alpha-trifluoromethylacrylate copolymer and its preparation
JP2653148B2 (ja) * 1989-01-20 1997-09-10 富士通株式会社 レジスト組成物
JP2659025B2 (ja) * 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
JPH03278057A (ja) * 1990-02-14 1991-12-09 Toshiba Corp パターン検査装置

Also Published As

Publication number Publication date
EP0447111B1 (de) 1996-07-17
KR940002549B1 (ko) 1994-03-25
DE69120842T2 (de) 1996-11-21
JPH03261952A (ja) 1991-11-21
JP2707785B2 (ja) 1998-02-04
EP0447111A1 (de) 1991-09-18
US5153103A (en) 1992-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee