DE69117868D1 - Zerstäubungstarget und dessen herstellung - Google Patents

Zerstäubungstarget und dessen herstellung

Info

Publication number
DE69117868D1
DE69117868D1 DE69117868T DE69117868T DE69117868D1 DE 69117868 D1 DE69117868 D1 DE 69117868D1 DE 69117868 T DE69117868 T DE 69117868T DE 69117868 T DE69117868 T DE 69117868T DE 69117868 D1 DE69117868 D1 DE 69117868D1
Authority
DE
Germany
Prior art keywords
production
spraying target
spraying
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69117868T
Other languages
English (en)
Other versions
DE69117868T2 (de
Inventor
Michio Satou
Takasi Yamanobe
Mituo Kawai
Tooru Komatu
Hiromi Shizu
Noriaki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69117868D1 publication Critical patent/DE69117868D1/de
Publication of DE69117868T2 publication Critical patent/DE69117868T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S75/00—Specialized metallurgical processes, compositions for use therein, consolidated metal powder compositions, and loose metal particulate mixtures
    • Y10S75/95—Consolidated metal powder compositions of >95% theoretical density, e.g. wrought
DE69117868T 1990-05-15 1991-05-15 Zerstäubungstarget und dessen herstellung Expired - Lifetime DE69117868T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12305490 1990-05-15
PCT/JP1991/000639 WO1991018125A1 (en) 1990-05-15 1991-05-15 Sputtering target and production thereof

Publications (2)

Publication Number Publication Date
DE69117868D1 true DE69117868D1 (de) 1996-04-18
DE69117868T2 DE69117868T2 (de) 1996-07-25

Family

ID=14851063

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117868T Expired - Lifetime DE69117868T2 (de) 1990-05-15 1991-05-15 Zerstäubungstarget und dessen herstellung

Country Status (4)

Country Link
US (3) US5409517A (de)
EP (1) EP0483375B1 (de)
DE (1) DE69117868T2 (de)
WO (1) WO1991018125A1 (de)

Families Citing this family (46)

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US5409517A (en) * 1990-05-15 1995-04-25 Kabushiki Kaisha Toshiba Sputtering target and method of manufacturing the same
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5464520A (en) * 1993-03-19 1995-11-07 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
EP0666336B1 (de) * 1993-07-27 2001-10-17 Kabushiki Kaisha Toshiba Verfahren zur herstellung eines hochschmelzenden metallischen silizidtargets
JP3755559B2 (ja) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ スパッタリングターゲット
EP1021265A4 (de) * 1997-07-11 2003-08-27 Johnson Matthey Elect Inc Sputtering targets aus intermetallischen aluminiden und siliziden, sowie herstellungsverfahren dafür
US6258719B1 (en) 1998-07-01 2001-07-10 Honeywell International Inc. Intermetallic aluminides and silicides articles, such as sputtering targets, and methods of making same
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP2003535969A (ja) 1997-07-11 2003-12-02 ジョンソン マッティー エレクトロニクス インコーポレイテッド 金属間アルミニド及びシリサイドスパッタリングターゲット、及びその製造方法
US6713391B2 (en) 1997-07-11 2004-03-30 Honeywell International Inc. Physical vapor deposition targets
EP1028824B1 (de) * 1997-07-15 2002-10-09 Tosoh Smd, Inc. Feuerfeste metall-silizid-legierung sputter-targets, dessen verwendung und herstellung
US6423196B1 (en) 1997-11-19 2002-07-23 Tosoh Smd, Inc. Method of making Ni-Si magnetron sputtering targets and targets made thereby
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
JP3820787B2 (ja) * 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6803235B1 (en) * 2000-06-15 2004-10-12 Honeywell International Inc. Methods of generating information about materials present in compositions and about particulates present in fluids utilizing a microscope
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US6682636B2 (en) * 2000-08-18 2004-01-27 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US6454994B1 (en) * 2000-08-28 2002-09-24 Honeywell International Inc. Solids comprising tantalum, strontium and silicon
JP4596379B2 (ja) * 2001-07-09 2010-12-08 Ｊｘ日鉱日石金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット
JP3995082B2 (ja) * 2001-07-18 2007-10-24 日鉱金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法
US6666901B1 (en) * 2001-11-08 2003-12-23 Technology Assessment & Transfer, Inc. Thermal shock resistant quasicrystalline alloy target
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
JP4160557B2 (ja) * 2002-08-06 2008-10-01 日鉱金属株式会社 ハフニウムシリサイドターゲット
KR20050118313A (ko) * 2003-05-02 2005-12-16 토소우 에스엠디, 인크 실리콘 함량이 낮은 Ｎｉ-Ｓｉ 스퍼터링 타깃의 제조방법및 당해 방법으로 제조한 타깃
JP2005167006A (ja) * 2003-12-03 2005-06-23 Shin Etsu Chem Co Ltd フレキシブル金属箔ポリイミド基板の製造方法
EP1694275A2 (de) * 2003-12-18 2006-08-30 AFG Industries, Inc. Schutzschicht für optische beschichtungen mit verbesserter korrosions- und kratzfestigkeit
FR2881757B1 (fr) * 2005-02-08 2007-03-30 Saint Gobain Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium
MX2007014164A (es) * 2005-05-12 2008-02-25 Agc Flat Glass North America Recubrimiento de baja emisividad con bajo coeficiente de ganancia de calor solar, propiedades quimicas y mecanicas mejoradas y metodo para fabricar el mismo.
JP4826882B2 (ja) * 2005-05-18 2011-11-30 株式会社 アイアイエスマテリアル スクラップシリコンの選別及び分析方法
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
US7901781B2 (en) * 2007-11-23 2011-03-08 Agc Flat Glass North America, Inc. Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same
JP5387613B2 (ja) * 2010-09-03 2014-01-15 株式会社豊田中央研究所 遷移金属シリサイド−Ｓｉ複合粉末及びその製造方法、並びに、遷移金属シリサイド−Ｓｉ複合粉末製造用ＣａＳｉｙ系粉末及びその製造方法
SG11201404314WA (en) * 2012-02-22 2014-10-30 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and manufacturing method for same
AT15050U1 (de) * 2015-12-18 2016-11-15 Plansee Composite Mat Gmbh Beschichtungsquelle mit Strukturierung
JP6768575B2 (ja) 2017-03-24 2020-10-14 Ｊｘ金属株式会社 タングステンシリサイドターゲット及びその製造方法
KR20220157951A (ko) * 2020-03-26 2022-11-29 도소 가부시키가이샤 Cr-Si 계 소결체, 스퍼터링 타깃, 및 박막의 제조 방법

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Also Published As

Publication number Publication date
WO1991018125A1 (en) 1991-11-28
EP0483375B1 (de) 1996-03-13
EP0483375A1 (de) 1992-05-06
EP0483375A4 (en) 1992-08-12
US5409517A (en) 1995-04-25
US5612571A (en) 1997-03-18
DE69117868T2 (de) 1996-07-25
US5508000A (en) 1996-04-16

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN