DE69115818D1 - Ätzgerät unter Verwendung eines fokussierten Ionenstrahls - Google Patents
Ätzgerät unter Verwendung eines fokussierten IonenstrahlsInfo
- Publication number
- DE69115818D1 DE69115818D1 DE69115818T DE69115818T DE69115818D1 DE 69115818 D1 DE69115818 D1 DE 69115818D1 DE 69115818 T DE69115818 T DE 69115818T DE 69115818 T DE69115818 T DE 69115818T DE 69115818 D1 DE69115818 D1 DE 69115818D1
- Authority
- DE
- Germany
- Prior art keywords
- etcher
- ion beam
- focused ion
- focused
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
- H01J2237/04756—Changing particle velocity decelerating with electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2261516A JPH088245B2 (ja) | 1990-09-28 | 1990-09-28 | 集束イオンビームエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69115818D1 true DE69115818D1 (de) | 1996-02-08 |
DE69115818T2 DE69115818T2 (de) | 1996-05-23 |
Family
ID=17362993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69115818T Expired - Fee Related DE69115818T2 (de) | 1990-09-28 | 1991-09-30 | Ätzgerät unter Verwendung eines fokussierten Ionenstrahls |
Country Status (4)
Country | Link |
---|---|
US (1) | US5518595A (de) |
EP (1) | EP0477992B1 (de) |
JP (1) | JPH088245B2 (de) |
DE (1) | DE69115818T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0613013A (ja) * | 1992-06-29 | 1994-01-21 | Sumitomo Electric Ind Ltd | イオンビームを集束して加工を行う装置 |
US5693241A (en) * | 1996-06-18 | 1997-12-02 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Atmospheric pressure method and apparatus for removal of organic matter with atomic and ionic oxygen |
US5840630A (en) * | 1996-12-20 | 1998-11-24 | Schlumberger Technologies Inc. | FBI etching enhanced with 1,2 di-iodo-ethane |
EP1047104A1 (de) * | 1999-04-19 | 2000-10-25 | Advantest Corporation | Gerät zur partikelinduzierter Veränderung einer Probe |
US6808606B2 (en) | 1999-05-03 | 2004-10-26 | Guardian Industries Corp. | Method of manufacturing window using ion beam milling of glass substrate(s) |
US6368664B1 (en) | 1999-05-03 | 2002-04-09 | Guardian Industries Corp. | Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon |
FR2804246B1 (fr) * | 2000-01-21 | 2003-09-19 | X Ion | Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre |
US6322672B1 (en) * | 2000-03-10 | 2001-11-27 | Fei Company | Method and apparatus for milling copper interconnects in a charged particle beam system |
US6806198B1 (en) * | 2001-05-23 | 2004-10-19 | Advanced Micro Devices, Inc. | Gas-assisted etch with oxygen |
US20030127424A1 (en) * | 2002-01-08 | 2003-07-10 | Seagate Technology Llc | Method of fabricating magnetic recording heads using asymmetric focused-Ion-beam trimming |
US20050103272A1 (en) | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
US20040063212A1 (en) * | 2002-09-30 | 2004-04-01 | Allen Pratt | Conditioning chamber for metallurgical surface science |
US8001853B2 (en) * | 2002-09-30 | 2011-08-23 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Natural Resources | Conditioning chamber for metallurgical surface science |
US8110814B2 (en) | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
US7368727B2 (en) | 2003-10-16 | 2008-05-06 | Alis Technology Corporation | Atomic level ion source and method of manufacture and operation |
US7485873B2 (en) | 2003-10-16 | 2009-02-03 | Alis Corporation | Ion sources, systems and methods |
US7521693B2 (en) | 2003-10-16 | 2009-04-21 | Alis Corporation | Ion sources, systems and methods |
US7786452B2 (en) | 2003-10-16 | 2010-08-31 | Alis Corporation | Ion sources, systems and methods |
US7786451B2 (en) | 2003-10-16 | 2010-08-31 | Alis Corporation | Ion sources, systems and methods |
US9159527B2 (en) | 2003-10-16 | 2015-10-13 | Carl Zeiss Microscopy, Llc | Systems and methods for a gas field ionization source |
US7504639B2 (en) | 2003-10-16 | 2009-03-17 | Alis Corporation | Ion sources, systems and methods |
US7557359B2 (en) | 2003-10-16 | 2009-07-07 | Alis Corporation | Ion sources, systems and methods |
US7321118B2 (en) | 2005-06-07 | 2008-01-22 | Alis Corporation | Scanning transmission ion microscope |
US7557358B2 (en) | 2003-10-16 | 2009-07-07 | Alis Corporation | Ion sources, systems and methods |
US7557361B2 (en) | 2003-10-16 | 2009-07-07 | Alis Corporation | Ion sources, systems and methods |
US7511280B2 (en) | 2003-10-16 | 2009-03-31 | Alis Corporation | Ion sources, systems and methods |
US7488952B2 (en) | 2003-10-16 | 2009-02-10 | Alis Corporation | Ion sources, systems and methods |
US7518122B2 (en) | 2003-10-16 | 2009-04-14 | Alis Corporation | Ion sources, systems and methods |
US7601953B2 (en) | 2006-03-20 | 2009-10-13 | Alis Corporation | Systems and methods for a gas field ion microscope |
US7414243B2 (en) | 2005-06-07 | 2008-08-19 | Alis Corporation | Transmission ion microscope |
US7495232B2 (en) | 2003-10-16 | 2009-02-24 | Alis Corporation | Ion sources, systems and methods |
US7554097B2 (en) | 2003-10-16 | 2009-06-30 | Alis Corporation | Ion sources, systems and methods |
US7511279B2 (en) | 2003-10-16 | 2009-03-31 | Alis Corporation | Ion sources, systems and methods |
US7557360B2 (en) | 2003-10-16 | 2009-07-07 | Alis Corporation | Ion sources, systems and methods |
US7554096B2 (en) | 2003-10-16 | 2009-06-30 | Alis Corporation | Ion sources, systems and methods |
WO2006086090A2 (en) * | 2005-01-03 | 2006-08-17 | The Regents Of The University Of California | Method and apparatus for generating nuclear fusion using crystalline materials |
US7205237B2 (en) * | 2005-07-05 | 2007-04-17 | International Business Machines Corporation | Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization |
WO2007067296A2 (en) | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
US7804068B2 (en) | 2006-11-15 | 2010-09-28 | Alis Corporation | Determining dopant information |
JP5097823B2 (ja) * | 2008-06-05 | 2012-12-12 | 株式会社日立ハイテクノロジーズ | イオンビーム装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5915985B2 (ja) * | 1981-06-29 | 1984-04-12 | 日本電信電話株式会社 | 分解種選択イオンビ−ム蒸着方法 |
USRE33193E (en) * | 1981-09-30 | 1990-04-03 | Hitachi, Ltd. | Ion beam processing apparatus and method of correcting mask defects |
JPS58106750A (ja) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | フオ−カスイオンビ−ム加工方法 |
JPS61136229A (ja) * | 1984-12-06 | 1986-06-24 | Toshiba Corp | ドライエツチング装置 |
JPH0682642B2 (ja) * | 1985-08-09 | 1994-10-19 | 株式会社日立製作所 | 表面処理装置 |
JPH0734357B2 (ja) * | 1985-10-22 | 1995-04-12 | ソニー株式会社 | 集束イオンビ−ム装置用のイオンガン |
JPS62154543A (ja) * | 1985-12-27 | 1987-07-09 | Hitachi Ltd | 荷電ビ−ム装置 |
WO1988009049A1 (en) * | 1987-05-11 | 1988-11-17 | Microbeam Inc. | Mask repair using an optimized focused ion beam system |
US5035787A (en) * | 1987-07-22 | 1991-07-30 | Microbeam, Inc. | Method for repairing semiconductor masks and reticles |
US4874460A (en) * | 1987-11-16 | 1989-10-17 | Seiko Instruments Inc. | Method and apparatus for modifying patterned film |
JPH0628253B2 (ja) * | 1988-02-17 | 1994-04-13 | 工業技術院長 | エッチング方法 |
JP2743399B2 (ja) * | 1988-09-24 | 1998-04-22 | ソニー株式会社 | 集束イオンビーム装置 |
JPH02181923A (ja) * | 1989-01-09 | 1990-07-16 | Nec Corp | GaAs系基板のエッチング方法 |
-
1990
- 1990-09-28 JP JP2261516A patent/JPH088245B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-30 DE DE69115818T patent/DE69115818T2/de not_active Expired - Fee Related
- 1991-09-30 EP EP91116748A patent/EP0477992B1/de not_active Expired - Lifetime
-
1995
- 1995-02-08 US US08/385,638 patent/US5518595A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69115818T2 (de) | 1996-05-23 |
EP0477992A2 (de) | 1992-04-01 |
US5518595A (en) | 1996-05-21 |
EP0477992A3 (en) | 1992-07-01 |
JPH04137728A (ja) | 1992-05-12 |
EP0477992B1 (de) | 1995-12-27 |
JPH088245B2 (ja) | 1996-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |