DE3789814D1 - Energiereiche oberflächenreaktionen unter verwendung eines cluster-strahls. - Google Patents

Energiereiche oberflächenreaktionen unter verwendung eines cluster-strahls.

Info

Publication number
DE3789814D1
DE3789814D1 DE3789814T DE3789814T DE3789814D1 DE 3789814 D1 DE3789814 D1 DE 3789814D1 DE 3789814 T DE3789814 T DE 3789814T DE 3789814 T DE3789814 T DE 3789814T DE 3789814 D1 DE3789814 D1 DE 3789814D1
Authority
DE
Germany
Prior art keywords
energy surface
surface reactions
cluster beam
cluster
reactions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789814T
Other languages
English (en)
Other versions
DE3789814T2 (de
Inventor
Wolfgang Knauer
John L Bartelt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3789814D1 publication Critical patent/DE3789814D1/de
Publication of DE3789814T2 publication Critical patent/DE3789814T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE3789814T 1987-02-20 1987-11-19 Energiereiche oberflächenreaktionen unter verwendung eines cluster-strahls. Expired - Fee Related DE3789814T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/017,380 US4740267A (en) 1987-02-20 1987-02-20 Energy intensive surface reactions using a cluster beam
PCT/US1987/003043 WO1988006194A1 (en) 1987-02-20 1987-11-19 Energy intensive surface reactions using a cluster beam

Publications (2)

Publication Number Publication Date
DE3789814D1 true DE3789814D1 (de) 1994-06-16
DE3789814T2 DE3789814T2 (de) 1994-08-25

Family

ID=21782265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789814T Expired - Fee Related DE3789814T2 (de) 1987-02-20 1987-11-19 Energiereiche oberflächenreaktionen unter verwendung eines cluster-strahls.

Country Status (7)

Country Link
US (1) US4740267A (de)
EP (1) EP0417067B1 (de)
JP (1) JPH01502203A (de)
KR (1) KR910001773B1 (de)
DE (1) DE3789814T2 (de)
HK (1) HK107394A (de)
WO (1) WO1988006194A1 (de)

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DE3628443C1 (de) * 1986-08-21 1988-02-11 Dornier System Gmbh Verfahren zur Erzeugung amorpher Schichten
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US5031408A (en) * 1988-04-19 1991-07-16 The Boeing Company Film deposition system
EP0376252B1 (de) * 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Verfahren zur Entfernung einer Oxidschicht auf einem Substrat
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5082685A (en) * 1989-07-24 1992-01-21 Tdk Corporation Method of conducting plasma treatment
US5205902A (en) * 1989-08-18 1993-04-27 Galileo Electro-Optics Corporation Method of manufacturing microchannel electron multipliers
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
JPH0452273A (ja) * 1990-06-18 1992-02-20 Mitsubishi Electric Corp 薄膜形成装置
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
US5286331A (en) * 1991-11-01 1994-02-15 International Business Machines Corporation Supersonic molecular beam etching of surfaces
DE4227237C2 (de) * 1992-08-19 1995-08-10 Juergen Dr Gspann Verfahren zur Agglomeratstrahl-Lithographie
JPH0737807A (ja) * 1993-07-21 1995-02-07 Hitachi Ltd 原子、分子線による表面処理方法およびその装置
EP0652308B1 (de) * 1993-10-14 2002-03-27 Neuralsystems Corporation Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
KR100192228B1 (ko) * 1995-08-04 1999-06-15 한갑수 주석 산화물 박막의 제조방법
US6162512A (en) * 1996-04-19 2000-12-19 Korea Institute Of Science And Technology Process for modifying surfaces of nitride, and nitride having surfaces modified thereby
US6152074A (en) * 1996-10-30 2000-11-28 Applied Materials, Inc. Deposition of a thin film on a substrate using a multi-beam source
DE19713637C2 (de) 1997-04-02 1999-02-18 Max Planck Gesellschaft Teilchenmanipulierung
JP3036506B2 (ja) * 1998-02-26 2000-04-24 日本電気株式会社 電子ビーム露光装置用一括アパチャの製造方法
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
KR100829288B1 (ko) * 1998-12-11 2008-05-13 서페이스 테크놀로지 시스템스 피엘씨 플라즈마 처리장치
US6375790B1 (en) 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6613240B2 (en) * 1999-12-06 2003-09-02 Epion Corporation Method and apparatus for smoothing thin conductive films by gas cluster ion beam
US6498107B1 (en) 2000-05-01 2002-12-24 Epion Corporation Interface control for film deposition by gas-cluster ion-beam processing
AUPR179500A0 (en) * 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
EP1442153A4 (de) * 2001-10-11 2007-05-02 Epion Corp Gcib-verarbeitung zur verbesserung von verbindungskontakten und verbesserter verbindungskontakt
JP2006507670A (ja) * 2002-11-08 2006-03-02 エピオン コーポレーション 集積回路相互接続構造のｇｃｉｂ処理
US7154086B2 (en) * 2003-03-19 2006-12-26 Burle Technologies, Inc. Conductive tube for use as a reflectron lens
US20080073516A1 (en) * 2006-03-10 2008-03-27 Laprade Bruce N Resistive glass structures used to shape electric fields in analytical instruments
KR20090057093A (ko) * 2006-10-30 2009-06-03 닛뽄 고쿠 덴시 고교 가부시키가이샤 가스 클러스터 이온빔에 의한 고체 표면의 평탄화 방법 및 고체 표면 평탄화 장치
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US8372489B2 (en) * 2007-09-28 2013-02-12 Tel Epion Inc. Method for directional deposition using a gas cluster ion beam
US7794798B2 (en) * 2007-09-29 2010-09-14 Tel Epion Inc. Method for depositing films using gas cluster ion beam processing
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US20090314963A1 (en) * 2008-06-24 2009-12-24 Tel Epion Inc. Method for forming trench isolation
US8202435B2 (en) * 2008-08-01 2012-06-19 Tel Epion Inc. Method for selectively etching areas of a substrate using a gas cluster ion beam
US8313663B2 (en) 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US8304033B2 (en) * 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls

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JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
US4541890A (en) * 1982-06-01 1985-09-17 International Business Machines Corporation Hall ion generator for working surfaces with a low energy high intensity ion beam
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JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith

Also Published As

Publication number Publication date
WO1988006194A1 (en) 1988-08-25
KR890700693A (ko) 1989-04-26
DE3789814T2 (de) 1994-08-25
EP0417067B1 (de) 1994-05-11
HK107394A (en) 1994-10-14
US4740267A (en) 1988-04-26
JPH0548301B2 (de) 1993-07-21
EP0417067A1 (de) 1991-03-20
KR910001773B1 (ko) 1991-03-23
JPH01502203A (ja) 1989-08-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee