DE3851083D1 - Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl. - Google Patents

Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.

Info

Publication number
DE3851083D1
DE3851083D1 DE3851083T DE3851083T DE3851083D1 DE 3851083 D1 DE3851083 D1 DE 3851083D1 DE 3851083 T DE3851083 T DE 3851083T DE 3851083 T DE3851083 T DE 3851083T DE 3851083 D1 DE3851083 D1 DE 3851083D1
Authority
DE
Germany
Prior art keywords
electron beam
beam pattern
pattern recorder
recorder
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851083T
Other languages
English (en)
Other versions
DE3851083T2 (de
Inventor
Masahiko Okunuki
Mitsuaki Seki
Isamu Shimoda
Mamoru Miyawaki
Takeo Tsukamoto
Akira Suzuki
Tetsuya Kaneko
Toshihiko Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10302187A external-priority patent/JPS63269520A/ja
Priority claimed from JP10302287A external-priority patent/JPS63269521A/ja
Priority claimed from JP10302987A external-priority patent/JPS63269525A/ja
Priority claimed from JP62103024A external-priority patent/JPH0752706B2/ja
Priority claimed from JP10303587A external-priority patent/JPH0722111B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3851083D1 publication Critical patent/DE3851083D1/de
Application granted granted Critical
Publication of DE3851083T2 publication Critical patent/DE3851083T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE3851083T 1987-04-28 1988-04-27 Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl. Expired - Fee Related DE3851083T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10302187A JPS63269520A (ja) 1987-04-28 1987-04-28 電子線描画装置
JP10302287A JPS63269521A (ja) 1987-04-28 1987-04-28 電子線描画装置
JP10302987A JPS63269525A (ja) 1987-04-28 1987-04-28 荷電ビ−ム装置
JP62103024A JPH0752706B2 (ja) 1987-04-28 1987-04-28 電子ビ−ム装置
JP10303587A JPH0722111B2 (ja) 1987-04-28 1987-04-28 荷電ビ−ム発生装置

Publications (2)

Publication Number Publication Date
DE3851083D1 true DE3851083D1 (de) 1994-09-22
DE3851083T2 DE3851083T2 (de) 1995-01-12

Family

ID=27526117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851083T Expired - Fee Related DE3851083T2 (de) 1987-04-28 1988-04-27 Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.

Country Status (3)

Country Link
US (1) US4974736A (de)
EP (1) EP0289278B1 (de)
DE (1) DE3851083T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600734A (en) * 1991-10-04 1997-02-04 Fujitsu Limited Electron beam tester
JP3044382B2 (ja) * 1989-03-30 2000-05-22 キヤノン株式会社 電子源及びそれを用いた画像表示装置
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
US5327338A (en) * 1990-01-31 1994-07-05 Etec Systems, Inc. Scanning laser lithography system alignment apparatus
DE69223088T2 (de) * 1991-06-10 1998-03-05 Fujitsu Ltd Apparat zur Musterüberprüfung und Elektronenstrahlgerät
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
KR100273785B1 (ko) * 1991-07-18 2001-01-15 기타지마 요시토시 정합패턴을 갖는 패턴판의 묘화방법 및 그 방법에 의하여 묘화된 패턴판
JP3303436B2 (ja) * 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
JPH07220988A (ja) * 1994-01-27 1995-08-18 Canon Inc 投影露光方法及び装置及びこれを用いたデバイス製造方法
US5898269A (en) * 1995-07-10 1999-04-27 The Board Of Trustees Of The Leland Stanford Jr. University Electron sources having shielded cathodes
JP3033484B2 (ja) * 1995-12-21 2000-04-17 日本電気株式会社 電子線露光装置
JP3335845B2 (ja) * 1996-08-26 2002-10-21 株式会社東芝 荷電ビーム描画装置及び描画方法
US6498349B1 (en) 1997-02-05 2002-12-24 Ut-Battelle Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
US5892231A (en) * 1997-02-05 1999-04-06 Lockheed Martin Energy Research Corporation Virtual mask digital electron beam lithography
JPH10294255A (ja) * 1997-04-17 1998-11-04 Canon Inc 電子ビーム照明装置、および該電子ビーム照明装置を備えた露光装置
US6740889B1 (en) * 1998-09-28 2004-05-25 Applied Materials, Inc. Charged particle beam microscope with minicolumn
JP2000182550A (ja) 1998-12-18 2000-06-30 Canon Inc 電子銃および電子銃を用いる照明装置または電子ビーム露光装置
US6198066B1 (en) 1999-02-24 2001-03-06 Sturm, Ruger & Company, Inc. Method and apparatus for radiated beam marking of a golf club part and such part
JP2001015421A (ja) 1999-07-01 2001-01-19 Canon Inc データ作成方法およびそれを用いた荷電粒子ビーム描画装置
WO2001048787A1 (en) 1999-12-23 2001-07-05 Philips Electron Optics B.V. Multi-electron -beam lithography apparatus with mutually different beam limiting apertures
US6758711B2 (en) 2001-06-14 2004-07-06 Hewlett-Packard Development Company, L.P. Integrated focusing emitter
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
JP2007231324A (ja) * 2006-02-28 2007-09-13 Canon Inc マルチ荷電ビーム加工装置
EP1921687B1 (de) * 2006-11-09 2009-10-28 Festo AG & Co. KG Verfahren und Vorrichtung zur Herstellung von Piezowandlern
US8214773B2 (en) * 2009-02-11 2012-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for E-beam direct write lithography
US9715995B1 (en) 2010-07-30 2017-07-25 Kla-Tencor Corporation Apparatus and methods for electron beam lithography using array cathode
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187849A (en) * 1981-05-15 1982-11-18 Nippon Telegr & Teleph Corp <Ntt> Electron gun
JPS5941831A (ja) * 1982-08-31 1984-03-08 Toshiba Corp 電子ビ−ム描画方法
US4584479A (en) * 1982-10-19 1986-04-22 Varian Associates, Inc. Envelope apparatus for localized vacuum processing
EP0109147A3 (de) * 1982-10-19 1986-04-16 Varian Associates, Inc. Geladene Teilchen Strahl-Lithographiegerät mit einer Vorrichtung zur Erzeugung eines lokalisierten Vakuums
GB8514390D0 (en) * 1985-06-07 1985-07-10 Turner D W Electron lithography
US4718019A (en) * 1985-06-28 1988-01-05 Control Data Corporation Election beam exposure system and an apparatus for carrying out a pattern unwinder
US4694178A (en) * 1985-06-28 1987-09-15 Control Data Corporation Multiple channel electron beam optical column lithography system and method of operation
JPS6229135A (ja) * 1985-07-29 1987-02-07 Advantest Corp 荷電粒子ビ−ム露光方法及びこの方法を用いた荷電粒子ビ−ム露光装置
NL8502275A (nl) * 1985-08-19 1987-03-16 Philips Nv In slanke deelbundels opgedeelde bundel geladen deeltjes.
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法

Also Published As

Publication number Publication date
EP0289278B1 (de) 1994-08-17
EP0289278A2 (de) 1988-11-02
EP0289278A3 (en) 1990-03-14
DE3851083T2 (de) 1995-01-12
US4974736A (en) 1990-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee