DE69108224T3 - Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt. - Google Patents

Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt.

Info

Publication number
DE69108224T3
DE69108224T3 DE69108224T DE69108224T DE69108224T3 DE 69108224 T3 DE69108224 T3 DE 69108224T3 DE 69108224 T DE69108224 T DE 69108224T DE 69108224 T DE69108224 T DE 69108224T DE 69108224 T3 DE69108224 T3 DE 69108224T3
Authority
DE
Germany
Prior art keywords
magnetoresistance effect
magnetic multilayer
multilayer
magnetic
magnetoresistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69108224T
Other languages
English (en)
Other versions
DE69108224T2 (de
DE69108224D1 (de
Inventor
Satoru Araki
Kiyomi Yasui
Yoshikazu Narumiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26424340&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69108224(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE69108224D1 publication Critical patent/DE69108224D1/de
Publication of DE69108224T2 publication Critical patent/DE69108224T2/de
Application granted granted Critical
Publication of DE69108224T3 publication Critical patent/DE69108224T3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12632—Four or more distinct components with alternate recurrence of each type component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
DE69108224T 1991-03-22 1991-08-19 Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt. Expired - Fee Related DE69108224T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8329091 1991-03-22
JP18690691A JP3320079B2 (ja) 1991-03-22 1991-07-01 磁性積層体および磁気抵抗効果素子

Publications (3)

Publication Number Publication Date
DE69108224D1 DE69108224D1 (de) 1995-04-20
DE69108224T2 DE69108224T2 (de) 1995-09-28
DE69108224T3 true DE69108224T3 (de) 2001-02-08

Family

ID=26424340

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69108224T Expired - Fee Related DE69108224T3 (de) 1991-03-22 1991-08-19 Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt.

Country Status (4)

Country Link
US (1) US5366815A (de)
EP (1) EP0504473B2 (de)
JP (1) JP3320079B2 (de)
DE (1) DE69108224T3 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0506433B2 (de) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element
JPH05183212A (ja) * 1991-07-30 1993-07-23 Toshiba Corp 磁気抵抗効果素子
JP3285937B2 (ja) * 1992-06-23 2002-05-27 ティーディーケイ株式会社 磁性多層膜および磁気抵抗変化素子ならびにそれらの製造方法
JP3411626B2 (ja) * 1992-08-27 2003-06-03 ティーディーケイ株式会社 磁性多層膜および磁気抵抗効果素子ならびにそれらの製造方法
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
WO1994011889A1 (en) * 1992-11-16 1994-05-26 Nonvolatile Electronics, Inc. Magnetoresistive structure with alloy layer
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
US5656381A (en) * 1993-03-24 1997-08-12 Sanyo Electric Co., Ltd. Magnetoresistance-effect element
US5585199A (en) * 1993-09-09 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect head
US5422621A (en) * 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
US5695858A (en) * 1994-03-23 1997-12-09 Sanyo Electric Co., Ltd. Magnetoresistive element
JP2569426B2 (ja) * 1994-03-24 1997-01-08 工業技術院長 超格子多層膜の製造方法
US5874886A (en) * 1994-07-06 1999-02-23 Tdk Corporation Magnetoresistance effect element and magnetoresistance device
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
JP2933841B2 (ja) * 1994-12-22 1999-08-16 沖電気工業株式会社 情報記録媒体、情報記録・再生方法および情報記録・再生装置
JP3514863B2 (ja) * 1995-02-01 2004-03-31 輝也 新庄 磁気抵抗効果多層膜、磁気抵抗効果素子および磁気抵抗効果素子の製造方法
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5648885A (en) * 1995-08-31 1997-07-15 Hitachi, Ltd. Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5976681A (en) * 1997-06-30 1999-11-02 Ford Global Technologies, Inc. Giant magnetoresistors with high sensitivity and reduced hysteresis
US6340886B1 (en) * 1997-08-08 2002-01-22 Nonvolatile Electronics, Incorporated Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
JP4303329B2 (ja) 1998-05-15 2009-07-29 Ｔｄｋ株式会社 磁気抵抗効果膜の製造方法および磁気抵抗効果型ヘッドの製造方法
JP2000331316A (ja) 1999-05-20 2000-11-30 Tdk Corp 磁気抵抗効果型ヘッド
JP2001006127A (ja) 1999-06-18 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
JP2001006130A (ja) 1999-06-24 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
JP3592140B2 (ja) 1999-07-02 2004-11-24 Ｔｄｋ株式会社 トンネル磁気抵抗効果型ヘッド
JP3321768B2 (ja) 1999-07-23 2002-09-09 ティーディーケイ株式会社 トンネル磁気抵抗効果素子
JP3331397B2 (ja) 1999-07-23 2002-10-07 ティーディーケイ株式会社 トンネル磁気抵抗効果素子
JP3400750B2 (ja) 1999-07-23 2003-04-28 ティーディーケイ株式会社 トンネル磁気抵抗効果型ヘッドの製造方法
US6893542B1 (en) 1999-09-10 2005-05-17 Seagate Technology Llc Sputtered multilayer magnetic recording media with ultra-high coercivity
SE9903481D0 (sv) * 1999-09-27 1999-09-27 Olle Eriksson Magnetic field sensor
WO2001071713A1 (en) 2000-03-22 2001-09-27 Nve Corporation Read heads in planar monolithic integrated circuit chips
US20060147758A1 (en) * 2005-01-06 2006-07-06 Hong-Sik Jung Perpendicular magnetic recording medium with magnetically resetable single domain soft magnetic underlayer
US7910159B2 (en) * 2005-06-03 2011-03-22 Wd Media, Inc. Radial magnetic field reset system for producing single domain soft magnetic underlayer on perpendicular magnetic recording medium
US8063634B2 (en) * 2008-07-31 2011-11-22 Allegro Microsystems, Inc. Electronic circuit and method for resetting a magnetoresistance element
US9354284B2 (en) 2014-05-07 2016-05-31 Allegro Microsystems, Llc Magnetic field sensor configured to measure a magnetic field in a closed loop manner
US9322887B1 (en) 2014-12-01 2016-04-26 Allegro Microsystems, Llc Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source
JP6597820B2 (ja) * 2018-03-12 2019-10-30 Ｔｄｋ株式会社 磁気センサおよび位置検出装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350180A (en) * 1967-10-31 Magnetic device with alternating lami- na of magnetic material and non-mag- netic metal on a substrate
US3479156A (en) * 1966-10-20 1969-11-18 Burton Silverplating Co Multilayer magnetic coating
JPS62264463A (ja) * 1986-05-12 1987-11-17 Fuji Photo Film Co Ltd 光磁気記録媒体
US4935311A (en) * 1987-04-13 1990-06-19 Hitachi, Ltd. Magnetic multilayered film and magnetic head using the same
EP0341521A1 (de) * 1988-05-09 1989-11-15 Siemens Aktiengesellschaft Magnetooptisches Speichermedium

Also Published As

Publication number Publication date
JPH04363005A (ja) 1992-12-15
US5366815A (en) 1994-11-22
EP0504473B1 (de) 1995-03-15
DE69108224T2 (de) 1995-09-28
EP0504473A1 (de) 1992-09-23
JP3320079B2 (ja) 2002-09-03
DE69108224D1 (de) 1995-04-20
EP0504473B2 (de) 2000-03-08

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8328 Change in the person/name/address of the agent

Representative=s name: HANSMANN & VOGESER, 81369 MUENCHEN

8339 Ceased/non-payment of the annual fee