DE69219936T2 - Magnetowiderstandseffekt-Element - Google Patents

Magnetowiderstandseffekt-Element

Info

Publication number
DE69219936T2
DE69219936T2 DE69219936T DE69219936T DE69219936T2 DE 69219936 T2 DE69219936 T2 DE 69219936T2 DE 69219936 T DE69219936 T DE 69219936T DE 69219936 T DE69219936 T DE 69219936T DE 69219936 T2 DE69219936 T2 DE 69219936T2
Authority
DE
Germany
Prior art keywords
effect element
magnetic resistance
resistance effect
magnetic
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69219936T
Other languages
English (en)
Other versions
DE69219936D1 (de
DE69219936T3 (de
Inventor
Yoshiaki Saito
Shino Okuno
Koichiro Inomata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13297125&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69219936(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69219936D1 publication Critical patent/DE69219936D1/de
Publication of DE69219936T2 publication Critical patent/DE69219936T2/de
Application granted granted Critical
Publication of DE69219936T3 publication Critical patent/DE69219936T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
DE69219936T 1991-03-29 1992-03-27 Magnetowiderstandseffekt-Element Expired - Lifetime DE69219936T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP65788/91 1991-03-29
JP6578891 1991-03-29

Publications (3)

Publication Number Publication Date
DE69219936D1 DE69219936D1 (de) 1997-07-03
DE69219936T2 true DE69219936T2 (de) 1997-10-16
DE69219936T3 DE69219936T3 (de) 2008-03-06

Family

ID=13297125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219936T Expired - Lifetime DE69219936T3 (de) 1991-03-29 1992-03-27 Magnetowiderstandseffekt-Element

Country Status (3)

Country Link
US (3) US5523172A (de)
EP (1) EP0506433B2 (de)
DE (1) DE69219936T3 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183212A (ja) * 1991-07-30 1993-07-23 Toshiba Corp 磁気抵抗効果素子
JP3207477B2 (ja) * 1991-12-24 2001-09-10 財団法人生産開発科学研究所 磁気抵抗効果素子
JPH0629589A (ja) * 1992-07-07 1994-02-04 Nec Corp 磁気抵抗効果素子
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
WO1994011889A1 (en) * 1992-11-16 1994-05-26 Nonvolatile Electronics, Inc. Magnetoresistive structure with alloy layer
DE4401476A1 (de) * 1993-01-20 1994-07-28 Fuji Electric Co Ltd Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf
JP3219329B2 (ja) * 1993-02-03 2001-10-15 財団法人生産開発科学研究所 磁気抵抗効果素子
JP3184352B2 (ja) * 1993-02-18 2001-07-09 松下電器産業株式会社 メモリー素子
US5585196A (en) * 1993-03-12 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect element
EP0677750A3 (de) * 1994-04-15 1996-04-24 Hewlett Packard Co Riesenmagnetoresistiver Sensor mit isolierender Pinning-Lage.
JP3574186B2 (ja) * 1994-09-09 2004-10-06 富士通株式会社 磁気抵抗効果素子
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
GB2312088B (en) * 1996-03-20 2000-09-20 Univ City Magnetoresistive device
US6611405B1 (en) 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
SE9903481D0 (sv) * 1999-09-27 1999-09-27 Olle Eriksson Magnetic field sensor
US6473336B2 (en) 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
US6639763B1 (en) * 2000-03-15 2003-10-28 Tdk Corporation Magnetic transducer and thin film magnetic head
JP4024499B2 (ja) * 2001-08-15 2007-12-19 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP2005025890A (ja) * 2003-07-04 2005-01-27 Fujitsu Ltd 磁気ヘッド用磁性膜
US20050013060A1 (en) * 2003-07-14 2005-01-20 International Business Machines Corporation Magnetoresistive sensor
JP3695459B2 (ja) * 2003-10-30 2005-09-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法
WO2005088655A1 (en) 2004-03-12 2005-09-22 The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin A magnetoresistive medium
US11200933B2 (en) * 2016-06-03 2021-12-14 Tohoku University Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350180A (en) * 1967-10-31 Magnetic device with alternating lami- na of magnetic material and non-mag- netic metal on a substrate
DE1252739B (de) * 1964-03-17 1967-10-26 Siemens Aktiengesellschaft, Berlin und München, München Speicherelement mit gestapelten magnetischen Schichten
US3516076A (en) * 1967-03-29 1970-06-02 Siemens Ag Memory element employing stacked magnetic layers
JPS62264463A (ja) * 1986-05-12 1987-11-17 Fuji Photo Film Co Ltd 光磁気記録媒体
US4935311A (en) * 1987-04-13 1990-06-19 Hitachi, Ltd. Magnetic multilayered film and magnetic head using the same
JPH01238106A (ja) * 1988-03-18 1989-09-22 Nec Corp 耐食性強磁性薄膜
DE3820475C1 (de) † 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JPH0223681A (ja) * 1988-07-12 1990-01-25 Nec Corp 磁気抵抗効果素子
FR2648942B1 (fr) * 1989-06-27 1995-08-11 Thomson Csf Capteur a effet magnetoresistif
US5032945A (en) * 1989-11-07 1991-07-16 International Business Machines Corp. Magnetic thin film structures fabricated with edge closure layers
JP3088478B2 (ja) † 1990-05-21 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JP2690623B2 (ja) † 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5277991A (en) * 1991-03-08 1994-01-11 Matsushita Electric Industrial Co., Ltd. Magnetoresistive materials
JP3320079B2 (ja) * 1991-03-22 2002-09-03 ティーディーケイ株式会社 磁性積層体および磁気抵抗効果素子
JP3381957B2 (ja) * 1992-08-03 2003-03-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ

Also Published As

Publication number Publication date
US5523172A (en) 1996-06-04
DE69219936D1 (de) 1997-07-03
EP0506433B1 (de) 1997-05-28
DE69219936T3 (de) 2008-03-06
US5578385A (en) 1996-11-26
US5700588A (en) 1997-12-23
EP0506433B2 (de) 2007-08-01
EP0506433A1 (de) 1992-09-30

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8320 Willingness to grant licences declared (paragraph 23)
8366 Restricted maintained after opposition proceedings
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, TOKYO, JP