DE69219936D1 - Magnetowiderstandseffekt-Element - Google Patents
Magnetowiderstandseffekt-ElementInfo
- Publication number
- DE69219936D1 DE69219936D1 DE69219936T DE69219936T DE69219936D1 DE 69219936 D1 DE69219936 D1 DE 69219936D1 DE 69219936 T DE69219936 T DE 69219936T DE 69219936 T DE69219936 T DE 69219936T DE 69219936 D1 DE69219936 D1 DE 69219936D1
- Authority
- DE
- Germany
- Prior art keywords
- effect element
- magnetic resistance
- resistance effect
- magnetic
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP65788/91 | 1991-03-29 | ||
JP6578891 | 1991-03-29 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69219936D1 true DE69219936D1 (de) | 1997-07-03 |
DE69219936T2 DE69219936T2 (de) | 1997-10-16 |
DE69219936T3 DE69219936T3 (de) | 2008-03-06 |
Family
ID=13297125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69219936T Expired - Lifetime DE69219936T3 (de) | 1991-03-29 | 1992-03-27 | Magnetowiderstandseffekt-Element |
Country Status (3)
Country | Link |
---|---|
US (3) | US5523172A (de) |
EP (1) | EP0506433B2 (de) |
DE (1) | DE69219936T3 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183212A (ja) * | 1991-07-30 | 1993-07-23 | Toshiba Corp | 磁気抵抗効果素子 |
JP3207477B2 (ja) * | 1991-12-24 | 2001-09-10 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
JPH0629589A (ja) * | 1992-07-07 | 1994-02-04 | Nec Corp | 磁気抵抗効果素子 |
US5569544A (en) * | 1992-11-16 | 1996-10-29 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components |
DE69332699T2 (de) * | 1992-11-16 | 2003-09-18 | Nve Corp | Magnetoresistive struktur mit einer legierungsschicht |
DE4401476A1 (de) * | 1993-01-20 | 1994-07-28 | Fuji Electric Co Ltd | Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf |
JP3219329B2 (ja) * | 1993-02-03 | 2001-10-15 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
JP3184352B2 (ja) * | 1993-02-18 | 2001-07-09 | 松下電器産業株式会社 | メモリー素子 |
US5585196A (en) * | 1993-03-12 | 1996-12-17 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
EP0677750A3 (de) * | 1994-04-15 | 1996-04-24 | Hewlett Packard Co | Riesenmagnetoresistiver Sensor mit isolierender Pinning-Lage. |
JP3574186B2 (ja) * | 1994-09-09 | 2004-10-06 | 富士通株式会社 | 磁気抵抗効果素子 |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
GB2312088B (en) * | 1996-03-20 | 2000-09-20 | Univ City | Magnetoresistive device |
US6611405B1 (en) | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
SE9903481D0 (sv) * | 1999-09-27 | 1999-09-27 | Olle Eriksson | Magnetic field sensor |
US6473336B2 (en) | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
US6639763B1 (en) * | 2000-03-15 | 2003-10-28 | Tdk Corporation | Magnetic transducer and thin film magnetic head |
JP4024499B2 (ja) * | 2001-08-15 | 2007-12-19 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP2005025890A (ja) * | 2003-07-04 | 2005-01-27 | Fujitsu Ltd | 磁気ヘッド用磁性膜 |
US20050013060A1 (en) * | 2003-07-14 | 2005-01-20 | International Business Machines Corporation | Magnetoresistive sensor |
JP3695459B2 (ja) * | 2003-10-30 | 2005-09-14 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
EP1730751B1 (de) * | 2004-03-12 | 2009-10-21 | The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Magnetoresistives medium |
JP6923213B2 (ja) * | 2016-06-03 | 2021-08-18 | 国立大学法人東北大学 | 磁性積層膜、磁気メモリ素子、磁気メモリ、及びその製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3350180A (en) * | 1967-10-31 | Magnetic device with alternating lami- na of magnetic material and non-mag- netic metal on a substrate | ||
DE1252739B (de) * | 1964-03-17 | 1967-10-26 | Siemens Aktiengesellschaft, Berlin und München, München | Speicherelement mit gestapelten magnetischen Schichten |
US3516076A (en) * | 1967-03-29 | 1970-06-02 | Siemens Ag | Memory element employing stacked magnetic layers |
JPS62264463A (ja) * | 1986-05-12 | 1987-11-17 | Fuji Photo Film Co Ltd | 光磁気記録媒体 |
US4935311A (en) * | 1987-04-13 | 1990-06-19 | Hitachi, Ltd. | Magnetic multilayered film and magnetic head using the same |
JPH01238106A (ja) * | 1988-03-18 | 1989-09-22 | Nec Corp | 耐食性強磁性薄膜 |
DE3820475C1 (de) † | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
JPH0223681A (ja) * | 1988-07-12 | 1990-01-25 | Nec Corp | 磁気抵抗効果素子 |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
US5032945A (en) * | 1989-11-07 | 1991-07-16 | International Business Machines Corp. | Magnetic thin film structures fabricated with edge closure layers |
JP3088478B2 (ja) † | 1990-05-21 | 2000-09-18 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JP2690623B2 (ja) † | 1991-02-04 | 1997-12-10 | 松下電器産業株式会社 | 磁気抵抗効果素子 |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5277991A (en) * | 1991-03-08 | 1994-01-11 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive materials |
JP3320079B2 (ja) * | 1991-03-22 | 2002-09-03 | ティーディーケイ株式会社 | 磁性積層体および磁気抵抗効果素子 |
JP3381957B2 (ja) * | 1992-08-03 | 2003-03-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ |
-
1992
- 1992-03-27 EP EP92302673A patent/EP0506433B2/de not_active Expired - Lifetime
- 1992-03-27 DE DE69219936T patent/DE69219936T3/de not_active Expired - Lifetime
-
1994
- 1994-04-28 US US08/234,863 patent/US5523172A/en not_active Expired - Lifetime
- 1994-12-27 US US08/364,524 patent/US5578385A/en not_active Expired - Lifetime
-
1996
- 1996-03-08 US US08/613,170 patent/US5700588A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0506433A1 (de) | 1992-09-30 |
DE69219936T2 (de) | 1997-10-16 |
DE69219936T3 (de) | 2008-03-06 |
US5578385A (en) | 1996-11-26 |
US5523172A (en) | 1996-06-04 |
EP0506433B2 (de) | 2007-08-01 |
US5700588A (en) | 1997-12-23 |
EP0506433B1 (de) | 1997-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8366 | Restricted maintained after opposition proceedings | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, TOKYO, JP |