DE69305933D1 - Magnetoresistives Element - Google Patents

Magnetoresistives Element

Info

Publication number
DE69305933D1
DE69305933D1 DE69305933T DE69305933T DE69305933D1 DE 69305933 D1 DE69305933 D1 DE 69305933D1 DE 69305933 T DE69305933 T DE 69305933T DE 69305933 T DE69305933 T DE 69305933T DE 69305933 D1 DE69305933 D1 DE 69305933D1
Authority
DE
Germany
Prior art keywords
magnetoresistive element
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69305933T
Other languages
English (en)
Other versions
DE69305933T2 (de
Inventor
Yoshiaki Saito
Koichiro Inomata
Shiho Okuno
Yoshinori Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69305933D1 publication Critical patent/DE69305933D1/de
Publication of DE69305933T2 publication Critical patent/DE69305933T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
DE69305933T 1992-08-03 1993-08-03 Magnetoresistives Element Expired - Lifetime DE69305933T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20644292 1992-08-03
JP20644192 1992-08-03
JP06122593A JP3381957B2 (ja) 1992-08-03 1993-02-26 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ

Publications (2)

Publication Number Publication Date
DE69305933D1 true DE69305933D1 (de) 1996-12-19
DE69305933T2 DE69305933T2 (de) 1997-05-28

Family

ID=27297431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69305933T Expired - Lifetime DE69305933T2 (de) 1992-08-03 1993-08-03 Magnetoresistives Element

Country Status (4)

Country Link
US (1) US5365212A (de)
EP (1) EP0582465B1 (de)
JP (1) JP3381957B2 (de)
DE (1) DE69305933T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0506433B2 (de) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5699213A (en) * 1993-11-16 1997-12-16 Sanyo Electric Co., Ltd. Magnetoresistive head having a magnetic domain control layer
EP0685746A3 (de) * 1994-05-30 1996-12-04 Sony Corp Maqnetowiderstandeffektanordnung mit verbessertem thermischem Widerstand.
JPH0845034A (ja) * 1994-07-29 1996-02-16 Sony Corp 磁気抵抗型磁気ヘッド及び記録・再生用複合型磁気ヘッド、並びにこれらの製造方法
JPH0878757A (ja) * 1994-09-08 1996-03-22 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
JP2738312B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 磁気抵抗効果膜およびその製造方法
US6001430A (en) * 1994-09-08 1999-12-14 Nec Corporation Magnetoresistance effect film and production process thereof
US5818323A (en) * 1994-09-09 1998-10-06 Sanyo Electric Co., Ltd. Magnetoresistive device
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US6611405B1 (en) 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6473336B2 (en) 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP2003218427A (ja) * 2002-01-23 2003-07-31 Sony Corp 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
JP4690675B2 (ja) * 2004-07-30 2011-06-01 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置
US7558028B2 (en) * 2005-11-16 2009-07-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with improved CPP sensor using Heusler alloys
US10276783B2 (en) * 2017-06-09 2019-04-30 Sandisk Technologies Llc Gate voltage controlled perpendicular spin orbit torque MRAM memory cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3820475C1 (de) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
US5168760A (en) * 1991-11-01 1992-12-08 The United States Of America As Represented By The Secretary Of The Navy Magnetic multilayer strain gage
JP3207477B2 (ja) * 1991-12-24 2001-09-10 財団法人生産開発科学研究所 磁気抵抗効果素子

Also Published As

Publication number Publication date
DE69305933T2 (de) 1997-05-28
EP0582465A1 (de) 1994-02-09
JPH06104506A (ja) 1994-04-15
JP3381957B2 (ja) 2003-03-04
US5365212A (en) 1994-11-15
EP0582465B1 (de) 1996-11-13

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)