DE69229322T2 - Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler - Google Patents

Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler

Info

Publication number
DE69229322T2
DE69229322T2 DE69229322T DE69229322T DE69229322T2 DE 69229322 T2 DE69229322 T2 DE 69229322T2 DE 69229322 T DE69229322 T DE 69229322T DE 69229322 T DE69229322 T DE 69229322T DE 69229322 T2 DE69229322 T2 DE 69229322T2
Authority
DE
Germany
Prior art keywords
magnetoresistance effect
sensor
effect element
effect sensor
magnetoresistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69229322T
Other languages
English (en)
Other versions
DE69229322D1 (de
Inventor
Yoshiaki Saito
Susumu Hashimoto
Koichiro Inomata
Hitoshi Iwasaki
Reiko Kondoh
Junichi Akiyama
Yuichi Ohsawa
Toshihiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP01157392A external-priority patent/JP3237885B2/ja
Priority claimed from JP7678392A external-priority patent/JPH05210827A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69229322D1 publication Critical patent/DE69229322D1/de
Publication of DE69229322T2 publication Critical patent/DE69229322T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE69229322T 1991-10-23 1992-10-23 Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler Expired - Lifetime DE69229322T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP27523191 1991-10-23
JP31885191 1991-12-03
JP01157392A JP3237885B2 (ja) 1992-01-27 1992-01-27 磁気抵抗効果素子
JP7678392A JPH05210827A (ja) 1991-12-03 1992-03-31 磁気抵抗効果センサ

Publications (2)

Publication Number Publication Date
DE69229322D1 DE69229322D1 (de) 1999-07-08
DE69229322T2 true DE69229322T2 (de) 1999-11-04

Family

ID=27455626

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69233139T Expired - Lifetime DE69233139T2 (de) 1991-10-23 1992-10-23 Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler
DE69229322T Expired - Lifetime DE69229322T2 (de) 1991-10-23 1992-10-23 Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69233139T Expired - Lifetime DE69233139T2 (de) 1991-10-23 1992-10-23 Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler

Country Status (3)

Country Link
US (1) US5304975A (de)
EP (2) EP0539213B1 (de)
DE (2) DE69233139T2 (de)

Families Citing this family (70)

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US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5780176A (en) * 1992-10-30 1998-07-14 Kabushiki Kaisha Toshiba Magnetoresistance effect element
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
DE4408274C2 (de) * 1993-03-12 2001-04-26 Toshiba Kawasaki Kk Magnetoresistenzeffekt-Element
US5576915A (en) * 1993-03-15 1996-11-19 Kabushiki Kaisha Toshiba Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof
US5493465A (en) * 1993-03-15 1996-02-20 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetic recording apparatus
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
US5656381A (en) * 1993-03-24 1997-08-12 Sanyo Electric Co., Ltd. Magnetoresistance-effect element
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5485333A (en) * 1993-04-23 1996-01-16 Eastman Kodak Company Shorted DMR reproduce head
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
FR2708110B1 (fr) * 1993-07-21 1995-08-18 Nipson Média pour imprimantes magnétographiques et utilisation d'un tel média.
EP0672303B1 (de) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magnetoresistive anordnung und diese verwendender magnetkopf
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
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US5549977A (en) * 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
EP0676746B1 (de) * 1994-03-09 1999-08-04 Eastman Kodak Company Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5874886A (en) * 1994-07-06 1999-02-23 Tdk Corporation Magnetoresistance effect element and magnetoresistance device
JPH0845029A (ja) * 1994-08-01 1996-02-16 Alps Electric Co Ltd 薄膜磁気ヘッド
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
WO1996007926A1 (en) * 1994-08-28 1996-03-14 Philips Electronics N.V. Magnetic field detector device
JP2901501B2 (ja) * 1994-08-29 1999-06-07 ティーディーケイ株式会社 磁性多層膜およびその製造方法ならびに磁気抵抗効果素子
US6001430A (en) * 1994-09-08 1999-12-14 Nec Corporation Magnetoresistance effect film and production process thereof
JP2738312B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 磁気抵抗効果膜およびその製造方法
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
JP3952515B2 (ja) * 1994-09-09 2007-08-01 富士通株式会社 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法
JP3574186B2 (ja) * 1994-09-09 2004-10-06 富士通株式会社 磁気抵抗効果素子
US5515221A (en) * 1994-12-30 1996-05-07 International Business Machines Corporation Magnetically stable shields for MR head
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜
JPH08287422A (ja) * 1995-04-07 1996-11-01 Alps Electric Co Ltd 磁気抵抗効果型ヘッド
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
JPH0944817A (ja) * 1995-07-25 1997-02-14 Sony Corp 薄膜磁気ヘッド
SG47214A1 (en) * 1996-03-14 1998-03-20 Sony Corp Thin-film magnetic head
GB2312088B (en) * 1996-03-20 2000-09-20 Univ City Magnetoresistive device
JPH1049834A (ja) * 1996-08-07 1998-02-20 Sony Corp 多層磁気抵抗効果膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
JP3198265B2 (ja) * 1997-04-10 2001-08-13 アルプス電気株式会社 磁気抵抗効果素子
US6201673B1 (en) 1999-04-02 2001-03-13 Read-Rite Corporation System for biasing a synthetic free layer in a magnetoresistance sensor
US6889555B1 (en) * 1999-07-20 2005-05-10 Fidelica Microsystems, Inc. Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same
US6694822B1 (en) * 1999-07-20 2004-02-24 Fidelica Microsystems, Inc. Use of multi-layer thin films as stress sensor
US6611405B1 (en) 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6473336B2 (en) 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
US6759149B1 (en) 2000-07-25 2004-07-06 Seagate Technology Llc Laminated medium with antiferromagnetic stabilization layers
JP3618654B2 (ja) * 2000-09-11 2005-02-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
US20050013059A1 (en) * 2003-07-15 2005-01-20 International Business Machines Corporation Magnetoresistive sensor with a net magnetic moment
JP4179260B2 (ja) * 2004-09-29 2008-11-12 ソニー株式会社 磁気抵抗効果型磁気ヘッド及び磁気テープ装置
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) * 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
DE102006016334B4 (de) * 2006-04-06 2018-11-15 Boehringer Ingelheim Vetmedica Gmbh Verfahren und Vorrichtung zur Detektion magnetisierbarer Partikel
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4490950B2 (ja) * 2006-07-07 2010-06-30 株式会社東芝 磁気抵抗効果素子の製造方法、及び磁気抵抗効果素子
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP2008252008A (ja) 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗効果素子、およびその製造方法
JP2008311373A (ja) * 2007-06-13 2008-12-25 Toshiba Corp 磁性多層膜通電素子
JP5361201B2 (ja) 2008-01-30 2013-12-04 株式会社東芝 磁気抵抗効果素子の製造方法
JP5150284B2 (ja) 2008-01-30 2013-02-20 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5039007B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032429B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
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WO2018161146A1 (en) * 2017-03-10 2018-09-13 Simon Fraser University Magnetic coupling layers, structures comprising magnetic coupling layers and methods for fabricating and/or using same
CN111740010B (zh) * 2020-06-18 2022-11-15 电子科技大学 一种基于多层磁性复合结构的各向异性磁电阻

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Also Published As

Publication number Publication date
EP0805502A3 (de) 1997-11-12
DE69233139T2 (de) 2004-04-15
US5304975A (en) 1994-04-19
DE69233139D1 (de) 2003-08-28
EP0539213A1 (de) 1993-04-28
EP0539213B1 (de) 1999-06-02
EP0805502A2 (de) 1997-11-05
EP0805502B1 (de) 2003-07-23
DE69229322D1 (de) 1999-07-08

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