DE69200169T2 - Magnetresistive Materialien. - Google Patents
Magnetresistive Materialien.Info
- Publication number
- DE69200169T2 DE69200169T2 DE69200169T DE69200169T DE69200169T2 DE 69200169 T2 DE69200169 T2 DE 69200169T2 DE 69200169 T DE69200169 T DE 69200169T DE 69200169 T DE69200169 T DE 69200169T DE 69200169 T2 DE69200169 T2 DE 69200169T2
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistive materials
- magnetoresistive
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/12917—Next to Fe-base component
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3043305A JP2961914B2 (ja) | 1991-03-08 | 1991-03-08 | 磁気抵抗効果材料およびその製造方法 |
JP3100673A JP2964690B2 (ja) | 1991-05-02 | 1991-05-02 | 磁気抵抗効果材料およびその製造方法 |
JP3148475A JP2830513B2 (ja) | 1991-06-20 | 1991-06-20 | 磁気抵抗効果材料およびその製造方法 |
JP3148474A JP3021785B2 (ja) | 1991-06-20 | 1991-06-20 | 磁気抵抗効果材料およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69200169D1 DE69200169D1 (de) | 1994-07-14 |
DE69200169T2 true DE69200169T2 (de) | 1995-01-26 |
DE69200169T3 DE69200169T3 (de) | 2000-05-25 |
Family
ID=27461349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69200169T Expired - Fee Related DE69200169T3 (de) | 1991-03-08 | 1992-03-06 | Magnetresistive Materialien. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5277991A (de) |
EP (1) | EP0503499B2 (de) |
DE (1) | DE69200169T3 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69219936T3 (de) * | 1991-03-29 | 2008-03-06 | Kabushiki Kaisha Toshiba | Magnetowiderstandseffekt-Element |
JP3088519B2 (ja) * | 1991-10-23 | 2000-09-18 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
JP3207477B2 (ja) * | 1991-12-24 | 2001-09-10 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
JP2812042B2 (ja) * | 1992-03-13 | 1998-10-15 | 松下電器産業株式会社 | 磁気抵抗センサー |
DE69316438T2 (de) * | 1992-05-18 | 1998-08-27 | Nec Corp | Magnetoresistives Element |
JPH06220609A (ja) * | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
FR2698965B1 (fr) * | 1992-12-03 | 1995-01-06 | Commissariat Energie Atomique | Structure et capteur magnétiques multicouches à forte magnétorésistance et procédé de fabrication de la structure. |
DE4408274C2 (de) * | 1993-03-12 | 2001-04-26 | Toshiba Kawasaki Kk | Magnetoresistenzeffekt-Element |
US5585198A (en) * | 1993-10-20 | 1996-12-17 | Sanyo Electric Co., Ltd. | Magnetorsistance effect element |
US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
US5585199A (en) * | 1993-09-09 | 1996-12-17 | Kabushiki Kaisha Toshiba | Magnetoresistance effect head |
JPH0849062A (ja) * | 1994-08-04 | 1996-02-20 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
JPH08130337A (ja) * | 1994-09-09 | 1996-05-21 | Sanyo Electric Co Ltd | 磁気抵抗素子及びその製造方法 |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
US5869963A (en) * | 1996-09-12 | 1999-02-09 | Alps Electric Co., Ltd. | Magnetoresistive sensor and head |
US5976681A (en) * | 1997-06-30 | 1999-11-02 | Ford Global Technologies, Inc. | Giant magnetoresistors with high sensitivity and reduced hysteresis |
EP1125288A1 (de) * | 1998-09-24 | 2001-08-22 | Materials Innovation Inc. | Magnetoresistive vorrichtung, riesen-magnetoresistive vorrichtung und herstellungsverfahren |
DE10105894A1 (de) * | 2001-02-09 | 2002-09-05 | Bosch Gmbh Robert | Magnetisch sensitive Schichtanordnung |
JP3695459B2 (ja) * | 2003-10-30 | 2005-09-14 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4476454A (en) * | 1983-06-30 | 1984-10-09 | International Business Machines Corporation | New magnetoresistive materials |
JPH01238106A (ja) * | 1988-03-18 | 1989-09-22 | Nec Corp | 耐食性強磁性薄膜 |
US4879619A (en) * | 1988-03-28 | 1989-11-07 | International Business Machines Corporation | Magnetoresistive read transducer |
JPH0223681A (ja) * | 1988-07-12 | 1990-01-25 | Nec Corp | 磁気抵抗効果素子 |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
-
1992
- 1992-02-25 US US07/840,821 patent/US5277991A/en not_active Expired - Lifetime
- 1992-03-06 DE DE69200169T patent/DE69200169T3/de not_active Expired - Fee Related
- 1992-03-06 EP EP92103874A patent/EP0503499B2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69200169D1 (de) | 1994-07-14 |
US5277991A (en) | 1994-01-11 |
EP0503499A1 (de) | 1992-09-16 |
DE69200169T3 (de) | 2000-05-25 |
EP0503499B1 (de) | 1994-06-08 |
EP0503499B2 (de) | 1999-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8366 | Restricted maintained after opposition proceedings | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8339 | Ceased/non-payment of the annual fee |