DE69108224D1 - Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt. - Google Patents
Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt.Info
- Publication number
- DE69108224D1 DE69108224D1 DE69108224T DE69108224T DE69108224D1 DE 69108224 D1 DE69108224 D1 DE 69108224D1 DE 69108224 T DE69108224 T DE 69108224T DE 69108224 T DE69108224 T DE 69108224T DE 69108224 D1 DE69108224 D1 DE 69108224D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistance effect
- magnetic multilayer
- multilayer
- magnetic
- magnetoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8329091 | 1991-03-22 | ||
JP18690691A JP3320079B2 (ja) | 1991-03-22 | 1991-07-01 | 磁性積層体および磁気抵抗効果素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69108224D1 true DE69108224D1 (de) | 1995-04-20 |
DE69108224T2 DE69108224T2 (de) | 1995-09-28 |
DE69108224T3 DE69108224T3 (de) | 2001-02-08 |
Family
ID=26424340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69108224T Expired - Fee Related DE69108224T3 (de) | 1991-03-22 | 1991-08-19 | Magnetische Mehrschicht und Element mit Magnetowiderstandseffekt. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5366815A (de) |
EP (1) | EP0504473B2 (de) |
JP (1) | JP3320079B2 (de) |
DE (1) | DE69108224T3 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0506433B2 (de) * | 1991-03-29 | 2007-08-01 | Kabushiki Kaisha Toshiba | Magnetowiderstandseffekt-Element |
JPH05183212A (ja) * | 1991-07-30 | 1993-07-23 | Toshiba Corp | 磁気抵抗効果素子 |
JP3285937B2 (ja) * | 1992-06-23 | 2002-05-27 | ティーディーケイ株式会社 | 磁性多層膜および磁気抵抗変化素子ならびにそれらの製造方法 |
JP3411626B2 (ja) * | 1992-08-27 | 2003-06-03 | ティーディーケイ株式会社 | 磁性多層膜および磁気抵抗効果素子ならびにそれらの製造方法 |
US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
US5569544A (en) * | 1992-11-16 | 1996-10-29 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components |
JPH08503336A (ja) * | 1992-11-16 | 1996-04-09 | ノンボラタイル エレクトロニクス,インコーポレイテッド | 合金層を有する磁気抵抗性構造 |
US5656381A (en) * | 1993-03-24 | 1997-08-12 | Sanyo Electric Co., Ltd. | Magnetoresistance-effect element |
US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
US5585198A (en) * | 1993-10-20 | 1996-12-17 | Sanyo Electric Co., Ltd. | Magnetorsistance effect element |
US5585199A (en) * | 1993-09-09 | 1996-12-17 | Kabushiki Kaisha Toshiba | Magnetoresistance effect head |
US5422621A (en) * | 1993-10-29 | 1995-06-06 | International Business Machines Corporation | Oriented granular giant magnetoresistance sensor |
US5695858A (en) * | 1994-03-23 | 1997-12-09 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
JP2569426B2 (ja) * | 1994-03-24 | 1997-01-08 | 工業技術院長 | 超格子多層膜の製造方法 |
US5874886A (en) * | 1994-07-06 | 1999-02-23 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
JPH0849062A (ja) * | 1994-08-04 | 1996-02-20 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
JPH08130337A (ja) * | 1994-09-09 | 1996-05-21 | Sanyo Electric Co Ltd | 磁気抵抗素子及びその製造方法 |
JP2933841B2 (ja) * | 1994-12-22 | 1999-08-16 | 沖電気工業株式会社 | 情報記録媒体、情報記録・再生方法および情報記録・再生装置 |
JP3514863B2 (ja) * | 1995-02-01 | 2004-03-31 | 輝也 新庄 | 磁気抵抗効果多層膜、磁気抵抗効果素子および磁気抵抗効果素子の製造方法 |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5648885A (en) * | 1995-08-31 | 1997-07-15 | Hitachi, Ltd. | Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
US5945904A (en) * | 1996-09-06 | 1999-08-31 | Ford Motor Company | Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers |
US5976681A (en) * | 1997-06-30 | 1999-11-02 | Ford Global Technologies, Inc. | Giant magnetoresistors with high sensitivity and reduced hysteresis |
US6404191B2 (en) | 1997-08-08 | 2002-06-11 | Nve Corporation | Read heads in planar monolithic integrated circuit chips |
US6340886B1 (en) * | 1997-08-08 | 2002-01-22 | Nonvolatile Electronics, Incorporated | Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface |
JP4303329B2 (ja) | 1998-05-15 | 2009-07-29 | Tdk株式会社 | 磁気抵抗効果膜の製造方法および磁気抵抗効果型ヘッドの製造方法 |
JP2000331316A (ja) | 1999-05-20 | 2000-11-30 | Tdk Corp | 磁気抵抗効果型ヘッド |
JP2001006127A (ja) | 1999-06-18 | 2001-01-12 | Tdk Corp | トンネル磁気抵抗効果型ヘッド |
JP2001006130A (ja) | 1999-06-24 | 2001-01-12 | Tdk Corp | トンネル磁気抵抗効果型ヘッド |
JP3592140B2 (ja) | 1999-07-02 | 2004-11-24 | Tdk株式会社 | トンネル磁気抵抗効果型ヘッド |
JP3400750B2 (ja) | 1999-07-23 | 2003-04-28 | ティーディーケイ株式会社 | トンネル磁気抵抗効果型ヘッドの製造方法 |
JP3331397B2 (ja) | 1999-07-23 | 2002-10-07 | ティーディーケイ株式会社 | トンネル磁気抵抗効果素子 |
JP3321768B2 (ja) | 1999-07-23 | 2002-09-09 | ティーディーケイ株式会社 | トンネル磁気抵抗効果素子 |
US6893542B1 (en) | 1999-09-10 | 2005-05-17 | Seagate Technology Llc | Sputtered multilayer magnetic recording media with ultra-high coercivity |
SE9903481D0 (sv) * | 1999-09-27 | 1999-09-27 | Olle Eriksson | Magnetic field sensor |
US20060147758A1 (en) * | 2005-01-06 | 2006-07-06 | Hong-Sik Jung | Perpendicular magnetic recording medium with magnetically resetable single domain soft magnetic underlayer |
US7910159B2 (en) * | 2005-06-03 | 2011-03-22 | Wd Media, Inc. | Radial magnetic field reset system for producing single domain soft magnetic underlayer on perpendicular magnetic recording medium |
US8063634B2 (en) * | 2008-07-31 | 2011-11-22 | Allegro Microsystems, Inc. | Electronic circuit and method for resetting a magnetoresistance element |
US9354284B2 (en) | 2014-05-07 | 2016-05-31 | Allegro Microsystems, Llc | Magnetic field sensor configured to measure a magnetic field in a closed loop manner |
US9322887B1 (en) | 2014-12-01 | 2016-04-26 | Allegro Microsystems, Llc | Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source |
JP6597820B2 (ja) * | 2018-03-12 | 2019-10-30 | Tdk株式会社 | 磁気センサおよび位置検出装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3350180A (en) * | 1967-10-31 | Magnetic device with alternating lami- na of magnetic material and non-mag- netic metal on a substrate | ||
US3479156A (en) * | 1966-10-20 | 1969-11-18 | Burton Silverplating Co | Multilayer magnetic coating |
JPS62264463A (ja) * | 1986-05-12 | 1987-11-17 | Fuji Photo Film Co Ltd | 光磁気記録媒体 |
US4935311A (en) * | 1987-04-13 | 1990-06-19 | Hitachi, Ltd. | Magnetic multilayered film and magnetic head using the same |
EP0341521A1 (de) * | 1988-05-09 | 1989-11-15 | Siemens Aktiengesellschaft | Magnetooptisches Speichermedium |
-
1991
- 1991-07-01 JP JP18690691A patent/JP3320079B2/ja not_active Expired - Fee Related
- 1991-08-19 EP EP91113878A patent/EP0504473B2/de not_active Expired - Lifetime
- 1991-08-19 DE DE69108224T patent/DE69108224T3/de not_active Expired - Fee Related
-
1993
- 1993-05-24 US US08/065,443 patent/US5366815A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69108224T2 (de) | 1995-09-28 |
JP3320079B2 (ja) | 2002-09-03 |
EP0504473B2 (de) | 2000-03-08 |
JPH04363005A (ja) | 1992-12-15 |
US5366815A (en) | 1994-11-22 |
EP0504473B1 (de) | 1995-03-15 |
EP0504473A1 (de) | 1992-09-23 |
DE69108224T3 (de) | 2001-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: HANSMANN & VOGESER, 81369 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |