DE69033345T2 - Festkörper-Bildaufnahmevorrichtung mit einer Photoabschirmungsplatte, die über eine Schottky-Sperrschicht in Kontakt mit dem photoelektrischen Konversionsgebiet steht - Google Patents

Festkörper-Bildaufnahmevorrichtung mit einer Photoabschirmungsplatte, die über eine Schottky-Sperrschicht in Kontakt mit dem photoelektrischen Konversionsgebiet steht

Info

Publication number
DE69033345T2
DE69033345T2 DE69033345T DE69033345T DE69033345T2 DE 69033345 T2 DE69033345 T2 DE 69033345T2 DE 69033345 T DE69033345 T DE 69033345T DE 69033345 T DE69033345 T DE 69033345T DE 69033345 T2 DE69033345 T2 DE 69033345T2
Authority
DE
Germany
Prior art keywords
photo
contact
imaging device
photoelectric conversion
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033345T
Other languages
English (en)
Other versions
DE69033345D1 (de
Inventor
Kazuhisa C O Nec Corpor Nagaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69033345D1 publication Critical patent/DE69033345D1/de
Application granted granted Critical
Publication of DE69033345T2 publication Critical patent/DE69033345T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69033345T 1989-07-28 1990-07-26 Festkörper-Bildaufnahmevorrichtung mit einer Photoabschirmungsplatte, die über eine Schottky-Sperrschicht in Kontakt mit dem photoelektrischen Konversionsgebiet steht Expired - Fee Related DE69033345T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1196075A JPH0360159A (ja) 1989-07-28 1989-07-28 固体撮像素子

Publications (2)

Publication Number Publication Date
DE69033345D1 DE69033345D1 (de) 1999-12-16
DE69033345T2 true DE69033345T2 (de) 2000-06-08

Family

ID=16351786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033345T Expired - Fee Related DE69033345T2 (de) 1989-07-28 1990-07-26 Festkörper-Bildaufnahmevorrichtung mit einer Photoabschirmungsplatte, die über eine Schottky-Sperrschicht in Kontakt mit dem photoelektrischen Konversionsgebiet steht

Country Status (4)

Country Link
US (1) US5045906A (de)
EP (1) EP0410465B1 (de)
JP (1) JPH0360159A (de)
DE (1) DE69033345T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2575907B2 (ja) * 1989-12-28 1997-01-29 株式会社東芝 固体撮像装置とその製造方法
JP2722795B2 (ja) * 1990-08-08 1998-03-09 ヤマハ株式会社 楽音合成装置
JPH04181774A (ja) * 1990-11-16 1992-06-29 Sony Corp 固体撮像装置
JP3142327B2 (ja) * 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法
WO1992022092A1 (en) * 1991-06-07 1992-12-10 Eastman Kodak Company Ccd electrode structure for image sensors
KR930009132A (ko) * 1991-10-04 1993-05-22 김광호 고체 촬영 소자
JPH05275673A (ja) * 1992-03-24 1993-10-22 Sony Corp 固体撮像素子
KR970007711B1 (ko) * 1993-05-18 1997-05-15 삼성전자 주식회사 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치
US5736756A (en) * 1994-09-29 1998-04-07 Sony Corporation Solid-state image sensing device with lght shielding film
JP2797984B2 (ja) * 1994-10-27 1998-09-17 日本電気株式会社 固体撮像素子およびその製造方法
US6331873B1 (en) * 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
JP4450454B2 (ja) * 1999-08-26 2010-04-14 Ｏｋｉセミコンダクタ株式会社 半導体受光素子
JP4489319B2 (ja) * 2001-04-26 2010-06-23 富士通マイクロエレクトロニクス株式会社 固体撮像装置
US7718459B2 (en) * 2005-04-15 2010-05-18 Aptina Imaging Corporation Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089967A (ja) * 1983-10-24 1985-05-20 Sony Corp 光電変換素子
US4654683A (en) * 1985-08-23 1987-03-31 Eastman Kodak Company Blooming control in CCD image sensors
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
JP2506697B2 (ja) * 1986-12-05 1996-06-12 松下電子工業株式会社 固体撮像装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置

Also Published As

Publication number Publication date
US5045906A (en) 1991-09-03
EP0410465A2 (de) 1991-01-30
DE69033345D1 (de) 1999-12-16
JPH0360159A (ja) 1991-03-15
EP0410465B1 (de) 1999-11-10
EP0410465A3 (en) 1991-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee