DE69014759T2 - Bornitridmembran in einer Halbleiterplättchenstruktur. - Google Patents

Bornitridmembran in einer Halbleiterplättchenstruktur.

Info

Publication number
DE69014759T2
DE69014759T2 DE1990614759 DE69014759T DE69014759T2 DE 69014759 T2 DE69014759 T2 DE 69014759T2 DE 1990614759 DE1990614759 DE 1990614759 DE 69014759 T DE69014759 T DE 69014759T DE 69014759 T2 DE69014759 T2 DE 69014759T2
Authority
DE
Germany
Prior art keywords
boron nitride
semiconductor die
die structure
nitride membrane
membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1990614759
Other languages
English (en)
Other versions
DE69014759D1 (de
Inventor
William G America
Richard R Poole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redwood Microsystems Inc
Original Assignee
Redwood Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Redwood Microsystems Inc filed Critical Redwood Microsystems Inc
Publication of DE69014759D1 publication Critical patent/DE69014759D1/de
Application granted granted Critical
Publication of DE69014759T2 publication Critical patent/DE69014759T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE1990614759 1989-07-11 1990-07-09 Bornitridmembran in einer Halbleiterplättchenstruktur. Expired - Fee Related DE69014759T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37797989A 1989-07-11 1989-07-11
US54004390A 1990-06-21 1990-06-21

Publications (2)

Publication Number Publication Date
DE69014759D1 DE69014759D1 (de) 1995-01-19
DE69014759T2 true DE69014759T2 (de) 1995-04-13

Family

ID=27008031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990614759 Expired - Fee Related DE69014759T2 (de) 1989-07-11 1990-07-09 Bornitridmembran in einer Halbleiterplättchenstruktur.

Country Status (3)

Country Link
EP (1) EP0412301B1 (de)
JP (1) JPH03130655A (de)
DE (1) DE69014759T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2492562A2 (de) 2011-02-25 2012-08-29 RM te me na GmbH Strömungswiderstand

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483920A (en) * 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
JP3631658B2 (ja) * 2000-02-07 2005-03-23 株式会社リコー 原稿搬送装置および原稿読取装置
US6581441B1 (en) * 2002-02-01 2003-06-24 Perseptive Biosystems, Inc. Capillary column chromatography process and system
US8084105B2 (en) * 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
JP2017084894A (ja) * 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
US9640514B1 (en) 2016-03-29 2017-05-02 Globalfoundries Inc. Wafer bonding using boron and nitrogen based bonding stack

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868093A (en) * 1987-05-01 1989-09-19 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication by X-ray lithography utilizing stable boron nitride mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2492562A2 (de) 2011-02-25 2012-08-29 RM te me na GmbH Strömungswiderstand
DE102011051140A1 (de) * 2011-02-25 2012-08-30 Embedded Microsystems Bremen GmbH (EMB) Applikationszentrum für Mikrosystemtechnik Strömungswiderstand

Also Published As

Publication number Publication date
JPH03130655A (ja) 1991-06-04
DE69014759D1 (de) 1995-01-19
EP0412301A1 (de) 1991-02-13
EP0412301B1 (de) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee