DE69009409T2 - Halbleiter-Heterostrukturen. - Google Patents

Halbleiter-Heterostrukturen.

Info

Publication number
DE69009409T2
DE69009409T2 DE69009409T DE69009409T DE69009409T2 DE 69009409 T2 DE69009409 T2 DE 69009409T2 DE 69009409 T DE69009409 T DE 69009409T DE 69009409 T DE69009409 T DE 69009409T DE 69009409 T2 DE69009409 T2 DE 69009409T2
Authority
DE
Germany
Prior art keywords
semiconductor heterostructures
heterostructures
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009409T
Other languages
English (en)
Other versions
DE69009409D1 (de
Inventor
Robert L Thornton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69009409D1 publication Critical patent/DE69009409D1/de
Application granted granted Critical
Publication of DE69009409T2 publication Critical patent/DE69009409T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
DE69009409T 1989-11-30 1990-11-29 Halbleiter-Heterostrukturen. Expired - Fee Related DE69009409T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/443,999 US5038185A (en) 1989-11-30 1989-11-30 Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Publications (2)

Publication Number Publication Date
DE69009409D1 DE69009409D1 (de) 1994-07-07
DE69009409T2 true DE69009409T2 (de) 1994-12-22

Family

ID=23763066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009409T Expired - Fee Related DE69009409T2 (de) 1989-11-30 1990-11-29 Halbleiter-Heterostrukturen.

Country Status (4)

Country Link
US (1) US5038185A (de)
EP (1) EP0430691B1 (de)
JP (1) JP2502807B2 (de)
DE (1) DE69009409T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334854A (en) * 1990-07-11 1994-08-02 Canon Kabushiki Kaisha Optical semiconductor device with wavelength selectivity and method for amplifying or emitting the light using the same
KR940005454B1 (ko) * 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치
JP3183683B2 (ja) * 1991-09-06 2001-07-09 シャープ株式会社 窓型半導体レーザ素子
US5223704A (en) * 1992-03-31 1993-06-29 At&T Bell Laboratories Planar buried quantum well photodetector
US5216443A (en) * 1992-06-12 1993-06-01 Xerox Corporation Programmable intensity smart laser system capable of being fabricated on a semiconductive substrate
US5497181A (en) * 1992-06-29 1996-03-05 Xerox Corporation Dynamic control of individual spot exposure in an optical output device
US5323026A (en) * 1992-08-03 1994-06-21 Xerox Corporation Semiconductor laser with integrated phototransistor for dynamic power stabilization
US5319655A (en) * 1992-12-21 1994-06-07 Xerox Corporation Multiwavelength laterally-injecting-type lasers
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
WO1995015022A1 (fr) * 1993-11-24 1995-06-01 The Furukawa Electric Co., Ltd. Element optique a semi-conducteur
US5376583A (en) * 1993-12-29 1994-12-27 Xerox Corporation Method for producing P-type impurity induced layer disordering
US5455429A (en) * 1993-12-29 1995-10-03 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5574745A (en) * 1995-06-29 1996-11-12 Xerox Corporation Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material
US5608753A (en) * 1995-06-29 1997-03-04 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5742631A (en) * 1996-07-26 1998-04-21 Xerox Corporation Independently-addressable monolithic laser arrays
US6002142A (en) * 1996-09-30 1999-12-14 Xerox Corporation Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions
JP2000022206A (ja) * 1998-07-01 2000-01-21 Oki Electric Ind Co Ltd 半導体発光装置
US7195989B2 (en) * 2003-05-07 2007-03-27 Microfabrica Inc. Electrochemical fabrication methods using transfer plating of masks
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
JP2008004807A (ja) * 2006-06-23 2008-01-10 Hitachi Ltd ヘテロ接合バイポーラトランジスタ
WO2010151844A2 (en) * 2009-06-25 2010-12-29 Georgia Tech Research Corporation Metal oxide structures, devices, & fabrication methods
US9548589B2 (en) 2014-02-28 2017-01-17 Forelux Inc. Grating based optical transmitter
US9239507B2 (en) 2013-10-25 2016-01-19 Forelux Inc. Grating based optical coupler
US10386581B2 (en) 2013-10-25 2019-08-20 Forelux Inc. Grating based optical transmitter
CN104882782B (zh) * 2014-02-28 2020-06-23 光引研创股份有限公司 光发射器
JP2016111131A (ja) * 2014-12-04 2016-06-20 学校法人 名城大学 周期利得活性層を有する窒化物半導体発光素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728383A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor lasre device
US4399542A (en) * 1981-03-02 1983-08-16 Honeywell Inc. Transverse junction stripe laser with distributed Bragg reflectors
NL8101409A (nl) * 1981-03-23 1982-10-18 Philips Nv Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.
JPS5828887A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体レ−ザ
JPS58197789A (ja) * 1982-05-13 1983-11-17 Mitsubishi Electric Corp 半導体レ−ザ
JPS58225682A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
EP0199588B1 (de) * 1985-04-23 1993-09-01 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung
JPS62158382A (ja) * 1985-12-30 1987-07-14 Ricoh Co Ltd 半導体レ−ザ装置
JPH0779181B2 (ja) * 1987-07-15 1995-08-23 三菱電機株式会社 光集積化素子
JPS6449294A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor laser array device
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
JP2543551B2 (ja) * 1987-12-28 1996-10-16 キヤノン株式会社 半導体レ―ザ―
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness

Also Published As

Publication number Publication date
EP0430691A3 (en) 1991-11-21
US5038185A (en) 1991-08-06
DE69009409D1 (de) 1994-07-07
JPH03173440A (ja) 1991-07-26
JP2502807B2 (ja) 1996-05-29
EP0430691A2 (de) 1991-06-05
EP0430691B1 (de) 1994-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee