JPS6449294A - Semiconductor laser array device - Google Patents

Semiconductor laser array device

Info

Publication number
JPS6449294A
JPS6449294A JP20685987A JP20685987A JPS6449294A JP S6449294 A JPS6449294 A JP S6449294A JP 20685987 A JP20685987 A JP 20685987A JP 20685987 A JP20685987 A JP 20685987A JP S6449294 A JPS6449294 A JP S6449294A
Authority
JP
Japan
Prior art keywords
layer
active layer
regions
transverse junction
tjs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20685987A
Other languages
Japanese (ja)
Inventor
Toshitaka Aoyanagi
Yutaka Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20685987A priority Critical patent/JPS6449294A/en
Publication of JPS6449294A publication Critical patent/JPS6449294A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure

Abstract

PURPOSE:To form optically independent lasers to be close to each other by bending a common active layer of two or more transverse junction stripe lasers formed on the same substrate. CONSTITUTION:After a current-blocking layer 20 has been formed on a substrate 1, a clad layer 2, an active layer 17, a guide layer 27, a first diffraction grating and a second diffraction grating 18, 19 are grown in succession. Then, after P<+> diffusion regions 21 and P regions 22 have been formed by diffusing an impurity, electrodes 9, 10 are formed and a first transverse junction stripe laser and a second transverse junction stripe laser (hereinafter called 'TJS-LD') 23, 24 are formed. If different electric currents are impressed on these TJS-LD's 23, 24 via two electrodes 9, electrically independent laser beams are oscillated in oscillation regions 25, 26. Because the active layer 17 is bent in a U-shape, the laser beams are separated optically.
JP20685987A 1987-08-19 1987-08-19 Semiconductor laser array device Pending JPS6449294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20685987A JPS6449294A (en) 1987-08-19 1987-08-19 Semiconductor laser array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20685987A JPS6449294A (en) 1987-08-19 1987-08-19 Semiconductor laser array device

Publications (1)

Publication Number Publication Date
JPS6449294A true JPS6449294A (en) 1989-02-23

Family

ID=16530228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20685987A Pending JPS6449294A (en) 1987-08-19 1987-08-19 Semiconductor laser array device

Country Status (1)

Country Link
JP (1) JPS6449294A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

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