JPS63204781A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS63204781A JPS63204781A JP62038251A JP3825187A JPS63204781A JP S63204781 A JPS63204781 A JP S63204781A JP 62038251 A JP62038251 A JP 62038251A JP 3825187 A JP3825187 A JP 3825187A JP S63204781 A JPS63204781 A JP S63204781A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- waveguide
- grooves
- semiconductor laser
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 230000003287 optical effect Effects 0.000 abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 241000282693 Cercopithecidae Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/14—Heads, e.g. forming of the optical beam spot or modulation of the optical beam specially adapted to record on, or to reproduce from, more than one track simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は光学ディスク読取装置の光源として最適な半導
体レーザ装置に胸する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention is directed to a semiconductor laser device that is most suitable as a light source for an optical disk reader.
（ロ）従来の技術
現在、光学ディスク読取用の装置としては、消去用、続
出用、書込用の各ビームを個々に出力できるように６つ
の独立した共振器を約１００μｍの間隔で並列させてな
る６ピーム型の半導体レーザ装置が提案されている（実
願昭６１−４０９５２号〕。(b) Conventional technology Currently, optical disk reading devices consist of six independent resonators arranged in parallel at intervals of about 100 μm so that each beam for erasure, continuous output, and writing can be output individually. A 6-beam type semiconductor laser device has been proposed (Utility Application No. 40952/1983).
（ハ）発明が解決しようとする間粗点
このように逓伝した共振器から出射されるレーザ光を夫
々独立にモニタするためには特開１１１Ａ５８−１０２
５９０号公報に囲示されている如く共振器近傍に共振器
個々に対給してモニタ川の受光素子を配する方法が考え
られる。(c) Shortcomings to be solved by the invention In order to independently monitor the laser beams emitted from the resonators transmitted in this way, Japanese Patent Application Laid-Open No. 111A58-102
As shown in Japanese Patent No. 590, a method of arranging monitor light receiving elements in the vicinity of the resonators in pairs with each resonator may be considered.
然るに、半導体レーザビーム（共振器）から出力される
レーザ光のビーム広がり角θ〃は少なくとも１０°程度
ある丸め、上記チップと受光素子との間隔は５００μｍ
以下としない限り正確にモニタすることはできない。However, the beam spread angle θ of the laser light output from the semiconductor laser beam (resonator) is rounded to at least about 10 degrees, and the distance between the chip and the light receiving element is 500 μm.
Accurate monitoring is not possible unless the following is done.
即ち、第６図に示す如く、１００μｍ間隔（具体内には
各チップから出力されるレーザ光の光軸（４）間距離）
で並列された半導レーザチップ（１）〜（３）の各々の
出射面に対向して複数の受光素子（５）〜（７）が紀さ
れ、更に上記谷チップから出力されるレーザ光（１ａ）
〜（６ａ）の６広がり角が１０°でかつ谷チップ（１）
〜（３）と受光素子！５）〜（７）との距離が５００μ
ｍ以上である１祭、受光素子側において各レーザ光が重
畳することとなる。従って各受光素子（５）〜（７１は
大々対向するレーザチップ以外のチップから出力される
レーザ光をも受光することとなり１個々のレーザチップ
毎のモニタが不可能となる。That is, as shown in Fig. 6, the interval is 100 μm (specifically, the distance between the optical axes (4) of the laser beams output from each chip).
A plurality of light-receiving elements (5)-(7) are arranged opposite to the emission surfaces of the semiconductor laser chips (1)-(3) arranged in parallel at 1a)
~(6a) 6 Spread angle is 10° and valley chip (1)
~(3) and the light receiving element! The distance between 5) and (7) is 500μ
When the distance is greater than m, the respective laser beams will be superimposed on the light receiving element side. Therefore, each of the light receiving elements (5) to (71) also receives laser light output from chips other than the opposing laser chip, making it impossible to monitor each individual laser chip.
尚、谷チップ（１）〜（３）と受光素子（５）〜１７）
との距離を５００μｍ以下とすると上記問題は解決でき
るが、このように近接させることはレーザチップと受光
素子との光軸合せ及びワイヤボンドによる配縁等が繁雑
となり実用的ではない。In addition, the valley chips (1) to (3) and the light receiving elements (5) to 17)
Although the above problem can be solved by setting the distance between the laser chip and the light receiving element to 500 μm or less, it is not practical to make the laser chip and the light receiving element so close to each other because it requires complicated optical axis alignment and wire bonding.
そこで、本願出願人は実願昭６１−１８５２７５号にお
いてシリコン基板上に溝幅が同一の複数の導波溝が末広
がり状に形成された専政部材を各レーザチップと受光素
子との間に配し、上記導波溝により谷レーザチップから
出力されるレーザ光を完全に分−する構成を提案した。Therefore, in Utility Application No. 185275/1980, the applicant of the present application placed a dedicated member in which a plurality of waveguide grooves with the same groove width were formed on a silicon substrate in a shape that widened toward the end, between each laser chip and a light receiving element. We also proposed a configuration in which the laser light output from the valley laser chip is completely separated by the waveguide groove.
第４図は犬鵬唱６１−１８５２７３号に３いて提案され
た装置を示しく８）は専政部材であり、（９）〜ｕ幻は
該半波部材にｊし成され良導波溝である。尚、第４図中
、第６図と同一箇所には同一番号を付し、説明を省略す
る。Figure 4 shows the device proposed in No. 61-185273, where 8) is a self-contained member, and (9) to u are a good waveguide groove formed in the half-wave member. It is. Note that in FIG. 4, the same parts as in FIG. 6 are given the same numbers, and explanations are omitted.
然るに、所る傳１祝では、中央のレーザチップ（２）と
対応する導波溝ｕ１の延在方向は祈るチップ（２１から
出力されるレーザ光（２３）の出射方向と平行となるた
め問題はないが、左右のレーザチップ（１）（３）と対
もする導波溝＋９１ｆｌｌ）の延在方向は祈るチップ（
１）（３）から出力されるレーザ光（１ａ）（３ａ）の
出射方向と平行とはならないため、上記中央の導波溝ｔ
ｌＧを専政するレーザ光（２ａ）に軟ぺて左右の４［溝
１９１ （１υを専政するレーザ光（１Ｍ）（３ｍ）の
溝壁面では反射減衰量が大となる。この伯果受光素子（
５）〜（７）の出力は左右のものが中央のものに比べて
１／１０以下に減少するので、充分なモニタが不可能で
あった。However, in a certain Den 1 celebration, there is a problem because the extending direction of the waveguide groove u1 corresponding to the central laser chip (2) is parallel to the emission direction of the laser beam (23) output from the praying chip (21). However, the extending direction of the waveguide grooves (+91fl), which are paired with the left and right laser chips (1) and (3), is the same as the praying chip (
1) Since it is not parallel to the emission direction of the laser beams (1a) and (3a) output from (3), the central waveguide groove t
The laser beam (2a) that dominates lG has a large return loss on the groove wall surface of the 4 [grooves 191 (1M) (3m) on the left and right of the soft plate (laser light (1M) that dominates 1υ). element(
Since the outputs of 5) to (7) on the left and right sides were reduced to less than 1/10 of the outputs in the center, sufficient monitoring was impossible.
に）間粗点を解決するだめの手段
本発明＃ｉ祈る点に亀みてなされたもので、その構成的
特徴は、犬々２方向にレーザビームを出射する複数の半
導体レーザチップをアレイ状に構成した半導体レーザア
レイと、び半導体レーザアレイの各チップから出射され
一方の同一方向へ進行する各レーザビームを検出する受
光素子と、上記半導体レーザアレイと上記受光素子との
間に配置され、前記各レーザビームを受光素子へ導く複
数の導波溝が形成されたｌＪ反部材と、からなる半４休
レーザ装置において、上記辱ｉ溝はその延在方向が上記
′Ｐ郡体レーザチップから出射されるレーザ光の出射方
向に対して角度をもつものほど幅広としたことにある。2) Means to solve the problem of rough spots This invention was made in consideration of the points of the present invention #i, and its structural feature is that a plurality of semiconductor laser chips that emit laser beams in two directions are arranged in an array. a light receiving element for detecting each laser beam emitted from each chip of the semiconductor laser array and traveling in the same direction; and a light receiving element disposed between the semiconductor laser array and the light receiving element, In a semi-quadruple laser device consisting of a lJ anti-member in which a plurality of waveguide grooves are formed to guide each laser beam to a light-receiving element, the extending direction of the i-groove is emitted from the 'P group laser chip. The reason is that the wider the angle to the emission direction of the laser beam, the wider the angle.
（ホ）作 用
祈る構成によれば、４波溝内でのレーザ光の反射回数ｔ
−減少でさる。(e) According to the configuration, the number of reflections of the laser beam within the four wave grooves is t.
- Monkey due to decrease.
（へ）夫施例
第１図及びｖＪ２図は本発明の一夫施例を示し、（社）
はヒートシンクであり、シリコン等の半導体もしくは金
部等の良放熱体からなる。ｒμはヒートシンク（社）の
−主面上に積層されたＩｎ層、儲は１対のレーザ光出射
面を有する弗１〜集６半辱休レーザチップ（至）〜磯か
らなるレーザアレイであり、該アレイはヒートシンク（
２）の−上口の左端側に谷チップ□□□〜（２）から出
力されるレーザ光（２４ａ）〜（２６ａ）の光軸（２４
に＋） 〜Ｃ２６ｂ）が平行となるように整列組直され
る。（２）はシリコンからなる受光素子、例〜渕は該受
光素子の一生面に形成された第１〜第５受光頭戚であり
、上記受光素子（昂はその一生面が各レーザチップ伽〜
彌の１方のレーザ光出射面と対向するようにヒートシン
ク２１１の右側に配される。尚、上記頂域迩〜Ｉの間隔
１ｉ上記光軸（２４ｂ）〜（２６ｂ）の間隔より大であ
る。６υはシリコンからなる４波手段であり、該手段は
上記レーザチップ（至）〜缶に隣接してヒートシンクｕ
上に同者される。１．３ａ〜１Ａは上記等疫手段Ｇυの
固層面側にダイシングもしくはエツチングにより形成さ
れた第１〜第３尋波溝であり、Ｂ溝は上記レーザアレイ
の側から受光素子方何へ延在し、その開口はレーザアレ
イの側では上記光軸（２４ｂ）〜Ｃ２６ｂ）の間隔と、
また受光素子＠側では受光領域１〜■の間隔と夫々同一
となるように形成される。従って、第２図に示す如く第
２レーザチツプ四のレーザ光出射面と第２受光領域凶と
が対向する場合、第２導波溝（至）は光軸（２４ｂ）〜
（２６ｂ）と平行に延在し、第１、第６導波溝（３２（
ロ）は光軸（２４ｂ）〜（２６ｂ）と平行圧延在しない
こととなる。また、上記第１．６導波溝Ｇ３（至）の溝
幅は第１導波溝關のそれの約２倍とすると共に６溝６４
〜（ロ）の内面には金等を蒸着し、光反射性を高めてい
る。(f) Example of Kazuo Figures 1 and 2 show an example of Kazuo of the present invention.
is a heat sink, which is made of a semiconductor such as silicon or a good heat dissipation material such as a metal part. rμ is an In layer laminated on the main surface of a heat sink, and numeral is a laser array consisting of a laser chip (from 1 to 6) to iso, which has a pair of laser light emitting surfaces. , the array is a heat sink (
Optical axes (24
+) to C26b) are rearranged and rearranged so that they are parallel to each other. (2) is a light-receiving element made of silicon; for example, the first to fifth light-receiving heads are formed on the whole surface of the light-receiving element;
It is arranged on the right side of the heat sink 211 so as to face one laser beam emitting surface of the mirror. Incidentally, the distance 1i between the apex regions I and I is larger than the distance between the optical axes (24b) and (26b). 6υ is a four-wave means made of silicon, and this means is connected to the heat sink u adjacent to the laser chip (toward) to the can.
be joined by a superior. 1.3a to 1A are first to third cross-wave grooves formed by dicing or etching on the solid surface side of the isostatic means Gυ, and the B groove extends from the laser array side to the light receiving element. However, on the laser array side, the aperture is equal to the distance between the optical axes (24b) to C26b), and
Further, on the light receiving element @ side, the spacing is the same as that of the light receiving regions 1 to 2, respectively. Therefore, when the laser beam emitting surface of the second laser chip 4 and the second light receiving area face each other as shown in FIG.
(26b) and extend parallel to the first and sixth waveguide grooves (32(
B) is not rolled parallel to the optical axes (24b) to (26b). Further, the groove width of the 1.6th waveguide groove G3 (to) is approximately twice that of the first waveguide groove, and the 6th groove 64
The inner surface of ~(b) is vapor-deposited with gold or the like to enhance light reflection.
祈る装はでは、第１〜％６レーザチツプ（至）〜彌から
出射されるレーザ光（２４１）〜（２６ｍ）は夫々第１
〜第６導波溝国〜（財）を伝わって第１〜第６受光領ｗ
、■〜■に入射することとなる。In the prayer outfit, the laser beams (241) to (26m) emitted from the 1st to 6th laser chips (241) to 26m are the 1st to 6th laser chips, respectively.
～6th waveguide country～(foundation) to the 1st to 6th light receiving areas w
, ■ to ■.
また、祈る装置において第１〜第６レーザチツプ（至）
〜（支）から夫々同一出力のレーザ光を出射させたとこ
ろ、第１〜第５受光領域（ハ）〜■に入射するレーザ光
散の比は１：３：１乃至１：１：１となった。In addition, in the prayer device, the first to sixth laser chips (towards)
When laser beams of the same output are emitted from ~ (branches), the ratio of laser light scattering incident on the first to fifth light receiving areas (c) to ■ is 1:3:1 to 1:1:1. became.
尚、本来施例では光軸（２４ｂ）〜（２６ｂ）に平行で
ない！ｌＩ波溝の溝幅を光軸に平行な導波溝の溝幅の約
２１倍どしたが、このような溝幅は光軸と導波溝との角
度によって変更すべきものである。Incidentally, in the embodiment, it is not parallel to the optical axes (24b) to (26b)! Although the groove width of the II wave groove was set to about 21 times the groove width of the waveguide groove parallel to the optical axis, such groove width should be changed depending on the angle between the optical axis and the waveguide groove.
即ち、上記光軸と＃！導波溝の角度が大きくなればなる
ほど上記倍率を大さくすることＫより導波溝内での光反
射回政を減少させて、反射によるレーザ光の減食を抑止
できる。That is, the above optical axis and #! As the angle of the waveguide groove becomes larger, by increasing the above-mentioned magnification, it is possible to reduce the amount of light reflection within the waveguide groove, thereby suppressing the loss of laser light due to reflection.
（→ 発明の効果
本発明によれば、各レーザチップから出力される各レー
ザ光を従来に比して充分大さくモニタできる。(→ Effects of the Invention According to the present invention, each laser beam output from each laser chip can be monitored in a sufficiently large size compared to the conventional method.
凹
第１図及び第２Ａは本発明の実施例を示し、第１図は第
２図のＢ −Ｂ’線断面図、第２図は第１図のＡ−に線
断面図、第６図及び第４図は大々従来例を説明するため
の模式図及び断面図である。
＠・・・レーザアレイ、（至）〜■・・・％１〜第３半
導体レーザチップ、罰・・・受光素子、１〜／３１・・
・第１〜第６交光′＠駅、Ｉ３υ・・・都波部材、（至
）〜（２）・・・第１〜第５尋波溝。
出頗人三洋電機株式会社
代理人弁理士 西 野 卓 嗣（外１名）第１図
第３図
５．補正の対象
手続補正書（自発）
１、事件の表示
昭和６２年特許願第３８２５１、
発明の名称
半導体レーザ装置
３、補正をする者
事件との関係 特許出願人
名称 （１８８）三洋電機株式会社
４、代 理 人
住所 守口市京阪本通２丁目１８番地
（外１名）
連結先：電話（東京） ８３５−１１１１特許ｔンター
駐在 中用ムの出射方向に対して角度をもつものほど幅
広と（２）明細書の「発明の詳細な説明」の欄。
６、補正の内容
（１）特、ｆ請求の紀Ｉｌｌ！１を別紙の通り補正する
。
ｔ２１ Ｅｅｌ細書＠５頁％３行乃至同頁第１５行に
、「本発明は・・・とじたことにある。」とあるのを。
下記の通り補正する。
記
「本発明は祈る点に鑑みてなされたもので、その構成内
時＆は、複数の平行な軸に沿って、夫々前後２方回にレ
ーザビームを出射する半導体レーザ手段と、該半導体レ
ーザ手段から１方向に出射される各レーザビームを夫々
個々に検出する複数の受光頭載が配された受光素子と、
上記半導体レーザ手段と上記受光素子との間に配置され
、上記各レーザビームを上記各受光＠域へ辱く複数の導
波溝が形成された等波部材からなる半導体レーザ放置に
おいて、
上記導波溝μその延在方向が上記谷レーザビー特許請求
の範囲
された４′ｔＬ部材と、からなる半尋俸レーザ装置に宴
いて、1 and 2A show an embodiment of the present invention, FIG. 1 is a sectional view taken along the line B-B' in FIG. 2, FIG. 2 is a sectional view taken along the line A- in FIG. 1, and FIG. and FIG. 4 are a schematic diagram and a sectional view for explaining a conventional example. @...Laser array, (to) ~■...%1~3rd semiconductor laser chip, Punishment...Light receiving element, 1~/31...
・1st to 6th traffic lights' @ station, I3υ... Tsunami parts, (to) - (2)... 1st to 5th fathom wave grooves. Takuji Nishino (1 other person), patent attorney representing Sanyo Electric Co., Ltd. Figure 1 Figure 3 Figure 5. Written amendment to the procedure to be amended (voluntary) 1. Indication of the case 1985 Patent Application No. 38251, Name of the invention Semiconductor laser device 3. Person making the amendment Relationship to the case Name of the patent applicant (188) Sanyo Electric Co., Ltd. 4 , Agent Address: 2-18 Keihan Hondori, Moriguchi City (1 other person) Contact: Telephone (Tokyo) 835-1111 Patent Center Station 2) "Detailed Description of the Invention" column of the specification. 6. Contents of the amendment (1) Special, f-claimed Ill! Correct 1 as shown in the attached sheet. t21 Eel specification @ page 5, line 3 to line 15 of the same page, it says, ``The present invention consists in...binding.'' Correct as shown below. ``The present invention has been made in view of the above points, and its configuration includes a semiconductor laser means that emits a laser beam twice in the front and back along a plurality of parallel axes, and the semiconductor laser a light receiving element provided with a plurality of light receiving heads for individually detecting each laser beam emitted from the means in one direction;
When the semiconductor laser is left in place, the semiconductor laser is made of a uniform wave member disposed between the semiconductor laser means and the light receiving element, and in which a plurality of waveguide grooves are formed for directing each of the laser beams to each of the light receiving regions. A half-diameter laser device comprising a 4'tL member having a groove μ whose extending direction is within the scope of the above-mentioned valley laser beam patent claim,
Claims (1)
体レーザチップをアレイ状に構成した半導体レーザアレ
イと、該半導体レーザアレイの各チップから出射され一
方の同一方向へ進行する各レーザビームを検出する受光
素子と、上記半導体レーザアレイと上記受光素子との間
に配置され、前記各レーザビームを受光素子へ導く複数
の導波溝が形成された導波部材と、からなる半導体レー
ザ装置において、 上記導波溝はその延在方向が上記半導体レーザチップか
ら出射されるレーザ光の出射方向に対して角度をもつも
のほど幅広としたことを特徴とする半導体レーザ装置。(1) Detecting a semiconductor laser array configured in an array of a plurality of semiconductor laser chips that each emit laser beams in two directions, and each laser beam emitted from each chip of the semiconductor laser array and traveling in the same direction. A semiconductor laser device comprising: a light-receiving element; a waveguide member disposed between the semiconductor laser array and the light-receiving element and having a plurality of waveguide grooves for guiding each laser beam to the light-receiving element; A semiconductor laser device characterized in that the width of the waveguide groove is increased as the direction of its extension is at an angle to the emission direction of laser light emitted from the semiconductor laser chip.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038251A JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
| KR1019880001238A KR900008629B1 (en) | 1987-02-20 | 1988-02-10 | Semiconductor laser system |
| US07/157,049 US4847848A (en) | 1987-02-20 | 1988-02-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038251A JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63204781A true JPS63204781A (en) | 1988-08-24 |
| JPH0728092B2 JPH0728092B2 (en) | 1995-03-29 |
Family
ID=12520093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62038251A Expired - Lifetime JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0728092B2 (en) |
| KR (1) | KR900008629B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297081A (en) * | 1988-10-03 | 1990-04-09 | Mitsubishi Electric Corp | Semiconductor array laser |
| JPH0323959U (en) * | 1989-07-20 | 1991-03-12 | ||
| US5438586A (en) * | 1992-11-30 | 1995-08-01 | Canon Kabushiki Kaisha | Apparatus with light-emitting element and method for producing it |
-
1987
- 1987-02-20 JP JP62038251A patent/JPH0728092B2/en not_active Expired - Lifetime
-
1988
- 1988-02-10 KR KR1019880001238A patent/KR900008629B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297081A (en) * | 1988-10-03 | 1990-04-09 | Mitsubishi Electric Corp | Semiconductor array laser |
| JPH0323959U (en) * | 1989-07-20 | 1991-03-12 | ||
| US5438586A (en) * | 1992-11-30 | 1995-08-01 | Canon Kabushiki Kaisha | Apparatus with light-emitting element and method for producing it |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0728092B2 (en) | 1995-03-29 |
| KR900008629B1 (en) | 1990-11-26 |
| KR880010523A (en) | 1988-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |