DE69033002D1 - Belichtungsvorrichtung - Google Patents

Belichtungsvorrichtung

Info

Publication number
DE69033002D1
DE69033002D1 DE69033002T DE69033002T DE69033002D1 DE 69033002 D1 DE69033002 D1 DE 69033002D1 DE 69033002 T DE69033002 T DE 69033002T DE 69033002 T DE69033002 T DE 69033002T DE 69033002 D1 DE69033002 D1 DE 69033002D1
Authority
DE
Germany
Prior art keywords
exposure device
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033002T
Other languages
English (en)
Other versions
DE69033002T2 (de
Inventor
Eiji Sakamoto
Ryuichi Ebinuma
Mitsuaki Amemiya
Shunichi Uzawa
Koji Uda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25529089A external-priority patent/JP2885845B2/ja
Priority claimed from JP2158693A external-priority patent/JPH0449614A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69033002D1 publication Critical patent/DE69033002D1/de
Publication of DE69033002T2 publication Critical patent/DE69033002T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69033002T 1989-10-02 1990-10-01 Belichtungsvorrichtung Expired - Fee Related DE69033002T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25529089A JP2885845B2 (ja) 1989-10-02 1989-10-02 Ｘ線露光装置
JP2158693A JPH0449614A (ja) 1990-06-19 1990-06-19 Ｘ線露光装置

Publications (2)

Publication Number Publication Date
DE69033002D1 true DE69033002D1 (de) 1999-04-22
DE69033002T2 DE69033002T2 (de) 1999-09-02

Family

ID=26485727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033002T Expired - Fee Related DE69033002T2 (de) 1989-10-02 1990-10-01 Belichtungsvorrichtung

Country Status (3)

Country Link
US (1) US5138643A (de)
EP (1) EP0422814B1 (de)
DE (1) DE69033002T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3168018B2 (ja) * 1991-03-22 2001-05-21 キヤノン株式会社 基板吸着保持方法
EP0532236B1 (de) * 1991-09-07 1997-07-16 Canon Kabushiki Kaisha System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JP3184582B2 (ja) * 1991-11-01 2001-07-09 キヤノン株式会社 Ｘ線露光装置およびｘ線露光方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
EP1091256A1 (de) * 1994-11-29 2001-04-11 Canon Kabushiki Kaisha Ausrichtungsverfahren und Halbleiterbelichtungsverfahren
JP3894509B2 (ja) * 1995-08-07 2007-03-22 キヤノン株式会社 光学装置、露光装置およびデバイス製造方法
JP3634487B2 (ja) * 1996-02-09 2005-03-30 キヤノン株式会社 位置合せ方法、位置合せ装置、および露光装置
US5920398A (en) * 1996-03-01 1999-07-06 Canon Kabushiki Kaisha Surface position detecting method and scanning exposure method using the same
JP3372782B2 (ja) * 1996-10-04 2003-02-04 キヤノン株式会社 走査ステージ装置および走査型露光装置
JP3854680B2 (ja) * 1997-02-26 2006-12-06 キヤノン株式会社 圧力隔壁およびこれを用いた露光装置
US5913236A (en) * 1997-05-22 1999-06-15 Wodeslavsky; Josef Protection system for hydraulic systems against leaks/floods, freezing and pressure
EP0791814A3 (de) * 1997-05-26 1997-11-26 Martin Lehmann Verfahren zum Prüfen von Leck und Apparat zum Testen von Leck
US6082184A (en) 1997-05-27 2000-07-04 Martin Lehmann Method for leak testing and leak testing apparatus
JPH11312640A (ja) * 1998-02-25 1999-11-09 Canon Inc 処理装置および該処理装置を用いたデバイス製造方法
AU2900399A (en) * 1998-03-11 1999-09-27 True Technology, Inc. Method and apparatus for detection of leaks in hermetic packages
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP2001345248A (ja) * 2000-05-31 2001-12-14 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP2002198277A (ja) * 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
US6934003B2 (en) 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US6913670B2 (en) * 2002-04-08 2005-07-05 Applied Materials, Inc. Substrate support having barrier capable of detecting fluid leakage
EP2264534B1 (de) 2003-07-28 2013-07-17 Nikon Corporation Belichtungsapparat, Verfahren zur Herstellung einer Vorrichtung, und Verfahren zur Steuerung des Apparats
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
KR101748504B1 (ko) * 2004-01-05 2017-06-16 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
EP1780772B1 (de) 2004-07-12 2009-09-02 Nikon Corporation Belichtungsgerät und bauelemente-herstellungsverfahren
EP3258318B1 (de) 2004-08-03 2019-02-27 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
JP2006245157A (ja) * 2005-03-02 2006-09-14 Canon Inc 露光方法及び露光装置
KR102211898B1 (ko) * 2014-11-27 2021-02-05 삼성전자주식회사 노광 장치용 액체 누출 감지 장치 및 방법
US9733148B2 (en) * 2014-12-03 2017-08-15 International Business Machines Corporation Measuring moisture leakage through liquid-carrying hardware

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD127137B1 (de) * 1976-08-17 1979-11-28 Elektromat Veb Vorrichtung zum kompensieren der waermeeinwirkung an justier- und belichtungseinrichtungen
US4194233A (en) * 1978-01-30 1980-03-18 Rockwell International Corporation Mask apparatus for fine-line lithography
JPS54140585A (en) * 1978-04-24 1979-10-31 Diesel Kiki Co Fluid circuit leakage detector
JPS5953659B2 (ja) * 1980-04-11 1984-12-26 株式会社日立製作所 真空室中回転体の往復動機構
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
US4498833A (en) * 1982-05-24 1985-02-12 Varian Associates, Inc. Wafer orientation system
JPS59101833A (ja) * 1982-12-03 1984-06-12 Hitachi Ltd Ｘ線露光装置
JPS6197918A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
JPS61160934A (ja) * 1985-01-10 1986-07-21 Canon Inc 投影光学装置
JPS62222634A (ja) * 1986-03-18 1987-09-30 Fujitsu Ltd Ｘ線露光方法
EP0250064A2 (de) * 1986-06-20 1987-12-23 Varian Associates, Inc. Platte mit mehrfachen dünnen Klemmitteln zum Behandeln von Plättchen
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
JPS63116424A (ja) * 1986-11-05 1988-05-20 Nec Corp Ｘ線露光装置
JPS63119233A (ja) * 1986-11-07 1988-05-23 Hitachi Ltd Ｘ線転写装置
US4736763A (en) * 1987-02-26 1988-04-12 Britton George L Automatic device for the detection and shutoff of unwanted liquid flow in pipes
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
EP0282703B1 (de) * 1987-03-20 1991-01-16 Ushio Denki Behandlungsverfahren für Photolacke
JPS6461700A (en) * 1987-08-31 1989-03-08 Nec Corp Synchrotron radiation light exposing device
US4963423A (en) * 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
JPH01152639A (ja) * 1987-12-10 1989-06-15 Canon Inc 吸着保持装置
JPH01139237U (de) * 1988-03-15 1989-09-22
DE68921687T2 (de) * 1988-09-02 1995-08-03 Canon Kk Belichtungseinrichtung.
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法
US4901751A (en) * 1989-06-15 1990-02-20 Systems Chemistry, Inc. Fluid control valve and system with leak detection and containment

Also Published As

Publication number Publication date
DE69033002T2 (de) 1999-09-02
EP0422814A2 (de) 1991-04-17
US5138643A (en) 1992-08-11
EP0422814A3 (en) 1992-03-04
EP0422814B1 (de) 1999-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee