DE69032022D1 - Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen - Google Patents

Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen

Info

Publication number
DE69032022D1
DE69032022D1 DE69032022T DE69032022T DE69032022D1 DE 69032022 D1 DE69032022 D1 DE 69032022D1 DE 69032022 T DE69032022 T DE 69032022T DE 69032022 T DE69032022 T DE 69032022T DE 69032022 D1 DE69032022 D1 DE 69032022D1
Authority
DE
Germany
Prior art keywords
preparation
semiconductor devices
resist composition
polysilphenylene
siloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032022T
Other languages
English (en)
Other versions
DE69032022T2 (de
Inventor
Keiji Watanabe
Akira Oikawa
Shun-Ichi Fukuyama
Masaaki Yamagami
Takahisa Namiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69032022D1 publication Critical patent/DE69032022D1/de
Application granted granted Critical
Publication of DE69032022T2 publication Critical patent/DE69032022T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
DE69032022T 1989-11-15 1990-11-14 Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen Expired - Fee Related DE69032022T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29509689 1989-11-15
JP5642390 1990-03-09

Publications (2)

Publication Number Publication Date
DE69032022D1 true DE69032022D1 (de) 1998-03-12
DE69032022T2 DE69032022T2 (de) 1998-06-10

Family

ID=26397372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032022T Expired - Fee Related DE69032022T2 (de) 1989-11-15 1990-11-14 Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen

Country Status (4)

Country Link
US (2) US5240813A (de)
EP (1) EP0432905B1 (de)
KR (1) KR930007921B1 (de)
DE (1) DE69032022T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0432905B1 (de) * 1989-11-15 1998-02-04 Fujitsu Limited Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen
JP3476283B2 (ja) * 1995-08-17 2003-12-10 富士通株式会社 基板平坦化材料及びこれを用いた基板の平坦化方法
JPH1160735A (ja) * 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
KR100257710B1 (ko) * 1996-12-27 2000-06-01 김영환 리소그라피 공정의 시물레이션 방법
US6004653A (en) * 1997-02-18 1999-12-21 Winbond Electronics Corp. Planarization process by applying a polish-differentiating technique utilizing an ultraviolet-light sensitive organic oxide layer
JPH1140558A (ja) * 1997-07-22 1999-02-12 Sony Corp 誘電体膜の製造方法
US6303733B1 (en) 1997-12-12 2001-10-16 Alliedsignal Inc. Poly(arylene ether) homopolymer compositions and methods of manufacture thereof
US6124421A (en) * 1997-12-12 2000-09-26 Alliedsignal Inc. Poly(arylene ether) compositions and methods of manufacture thereof
US6423772B1 (en) * 1999-07-16 2002-07-23 Institute Of Chemistry, Chinese Academy Of Sciences Organo-bridged ladderlike polysiloxane, tube-like organosilicon polymers, complexes thereof, and the method for producing the same
EP1123991A3 (de) * 2000-02-08 2002-11-13 Asm Japan K.K. Materialen mit niedrieger Dielektrizitätskonstante und Verfahren
US6905981B1 (en) 2000-11-24 2005-06-14 Asm Japan K.K. Low-k dielectric materials and processes
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP4557497B2 (ja) * 2002-03-03 2010-10-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物
JP2004038142A (ja) 2002-03-03 2004-02-05 Shipley Co Llc ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物
WO2004037866A2 (en) * 2002-10-21 2004-05-06 Shipley Company L.L.C. Photoresists containing sulfonamide component
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
JP2004177952A (ja) * 2002-11-20 2004-06-24 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
JP2004235548A (ja) * 2003-01-31 2004-08-19 Nec Electronics Corp 半導体装置およびその製造方法
US20040229159A1 (en) * 2003-02-23 2004-11-18 Subbareddy Kanagasabapathy Fluorinated Si-polymers and photoresists comprising same
CN1570762B (zh) * 2003-03-03 2010-10-13 罗姆和哈斯电子材料有限责任公司 聚合物和含有该聚合物的光刻胶

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3318935A (en) * 1961-12-18 1967-05-09 Gen Electric Organosilicon material
US3296197A (en) * 1964-12-28 1967-01-03 Gen Electric Organopolysiloxane compositions
US3424779A (en) * 1966-11-21 1969-01-28 Tse C Wu Cyclopolysiloxanes substituted with trialkylsilylphenyl groups
JPS5911374A (ja) * 1982-07-08 1984-01-20 Nippon Sheet Glass Co Ltd コ−テイング組成物
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
DE3574418D1 (en) * 1984-05-30 1989-12-28 Fujitsu Ltd Pattern-forming material and its production and use
JPS61221232A (ja) * 1985-03-28 1986-10-01 Fujitsu Ltd シリル化ポリオルガノシルセスキオキサンの製法
JPH0814695B2 (ja) * 1987-03-25 1996-02-14 富士写真フイルム株式会社 光可溶化組成物
JPS63236028A (ja) * 1987-03-25 1988-09-30 Fuji Photo Film Co Ltd 光可溶化組成物
JPH01221431A (ja) * 1988-02-27 1989-09-04 Fujitsu Ltd 有機ケイ素重合体及びその製法ならびにそれを使用した半導体装置
JPH0284435A (ja) * 1988-09-20 1990-03-26 Fujitsu Ltd 有機ケイ素重合体、その製法及び用途
US5057396A (en) * 1988-09-22 1991-10-15 Tosoh Corporation Photosensitive material having a silicon-containing polymer
EP0432905B1 (de) * 1989-11-15 1998-02-04 Fujitsu Limited Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen

Also Published As

Publication number Publication date
EP0432905A3 (en) 1992-03-04
KR930007921B1 (ko) 1993-08-21
US5240813A (en) 1993-08-31
EP0432905A2 (de) 1991-06-19
KR910016815A (ko) 1991-11-05
DE69032022T2 (de) 1998-06-10
EP0432905B1 (de) 1998-02-04
US5484687A (en) 1996-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee