DE69030142T2 - Mit verbesserter Ausgangsstruktur ausgestattetes Ladungstransfer-Bauelement - Google Patents
Mit verbesserter Ausgangsstruktur ausgestattetes Ladungstransfer-BauelementInfo
- Publication number
- DE69030142T2 DE69030142T2 DE1990630142 DE69030142T DE69030142T2 DE 69030142 T2 DE69030142 T2 DE 69030142T2 DE 1990630142 DE1990630142 DE 1990630142 DE 69030142 T DE69030142 T DE 69030142T DE 69030142 T2 DE69030142 T2 DE 69030142T2
- Authority
- DE
- Germany
- Prior art keywords
- transfer device
- charge transfer
- device equipped
- output structure
- improved output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19023389 | 1989-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69030142D1 DE69030142D1 (de) | 1997-04-17 |
DE69030142T2 true DE69030142T2 (de) | 1997-09-25 |
Family
ID=16254709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1990630142 Expired - Fee Related DE69030142T2 (de) | 1989-07-21 | 1990-07-19 | Mit verbesserter Ausgangsstruktur ausgestattetes Ladungstransfer-Bauelement |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0409245B1 (de) |
JP (1) | JPH07123163B2 (de) |
DE (1) | DE69030142T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07322606A (ja) * | 1994-05-27 | 1995-12-08 | Sony Corp | 昇圧回路及びこれを用いた固体撮像装置 |
JP3619299B2 (ja) * | 1995-09-29 | 2005-02-09 | パイオニア株式会社 | 発光素子の駆動回路 |
JP3872927B2 (ja) * | 2000-03-22 | 2007-01-24 | 株式会社東芝 | 昇圧回路 |
JP4641166B2 (ja) * | 2004-09-15 | 2011-03-02 | ルネサスエレクトロニクス株式会社 | 固体撮像装置の電荷転送デバイスおよび固体撮像装置の電荷転送デバイスの駆動方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513431A (en) * | 1982-06-07 | 1985-04-23 | International Business Machines Corporation | Charge coupled device output circuit structure |
JPS59132668A (ja) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | 電荷転送素子の出力装置 |
JPS59138376A (ja) * | 1983-01-28 | 1984-08-08 | Toshiba Corp | 電荷結合素子の出力回路 |
JP2508668B2 (ja) * | 1986-11-10 | 1996-06-19 | ソニー株式会社 | 電荷転送装置 |
JPH084136B2 (ja) * | 1987-12-22 | 1996-01-17 | 日本電気株式会社 | 電荷転送装置 |
-
1990
- 1990-07-10 JP JP18202790A patent/JPH07123163B2/ja not_active Expired - Fee Related
- 1990-07-19 DE DE1990630142 patent/DE69030142T2/de not_active Expired - Fee Related
- 1990-07-19 EP EP90113876A patent/EP0409245B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH07123163B2 (ja) | 1995-12-25 |
EP0409245B1 (de) | 1997-03-12 |
EP0409245A2 (de) | 1991-01-23 |
DE69030142D1 (de) | 1997-04-17 |
JPH03129744A (ja) | 1991-06-03 |
EP0409245A3 (en) | 1991-07-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |