DE69026183D1 - Verfahren zur Herstellung eines Halbleiterlasers mit Spiegelfensterstruktur - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers mit Spiegelfensterstruktur

Info

Publication number
DE69026183D1
DE69026183D1 DE69026183T DE69026183T DE69026183D1 DE 69026183 D1 DE69026183 D1 DE 69026183D1 DE 69026183 T DE69026183 T DE 69026183T DE 69026183 T DE69026183 T DE 69026183T DE 69026183 D1 DE69026183 D1 DE 69026183D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor laser
window structure
mirror window
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026183T
Other languages
English (en)
Other versions
DE69026183T2 (de
Inventor
Haruki Kurihara
Hideo Tamura
Hirokazu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69026183D1 publication Critical patent/DE69026183D1/de
Application granted granted Critical
Publication of DE69026183T2 publication Critical patent/DE69026183T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE69026183T 1989-10-11 1990-10-11 Verfahren zur Herstellung eines Halbleiterlasers mit Spiegelfensterstruktur Expired - Fee Related DE69026183T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1264715A JPH03126283A (ja) 1989-10-11 1989-10-11 窓構造半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69026183D1 true DE69026183D1 (de) 1996-05-02
DE69026183T2 DE69026183T2 (de) 1996-09-12

Family

ID=17407179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026183T Expired - Fee Related DE69026183T2 (de) 1989-10-11 1990-10-11 Verfahren zur Herstellung eines Halbleiterlasers mit Spiegelfensterstruktur

Country Status (5)

Country Link
US (1) US5242856A (de)
EP (1) EP0422941B1 (de)
JP (1) JPH03126283A (de)
KR (1) KR940011262B1 (de)
DE (1) DE69026183T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2876839B2 (ja) * 1991-07-31 1999-03-31 日本電気株式会社 光半導体素子の製造方法
US5270245A (en) * 1992-11-27 1993-12-14 Motorola, Inc. Method of forming a light emitting diode
JPH07111357A (ja) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp 半導体レーザの製造方法
US5793913A (en) * 1996-07-10 1998-08-11 Northern Telecom Limited Method for the hybrid integration of discrete elements on a semiconductor substrate
JP4447728B2 (ja) * 2000-03-29 2010-04-07 富士フイルム株式会社 半導体レーザ素子
EP1248296A4 (de) 2000-09-08 2006-05-24 Mitsui Chemicals Inc Halbleiterlaserelement
JP3719705B2 (ja) * 2001-01-19 2005-11-24 ユーディナデバイス株式会社 化合物半導体装置の製造方法
JP2003198059A (ja) * 2001-12-27 2003-07-11 Sharp Corp 半導体レーザ素子およびその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154984A (en) * 1978-05-12 1979-12-06 Nec Corp Semiconductor laser device and its manufacture
JPS56142690A (en) * 1980-04-09 1981-11-07 Nec Corp Semiconductor laser and manufacture thereof
JPS59136984A (ja) * 1983-01-25 1984-08-06 Nec Corp 半導体レ−ザ
US4827483A (en) * 1985-08-12 1989-05-02 Hitachi, Ltd. Semiconductor laser device and method of fabricating the same
JPS6246585A (ja) * 1985-08-26 1987-02-28 Nec Corp 高出力半導体レ−ザ
JPH07112091B2 (ja) * 1986-03-06 1995-11-29 株式会社東芝 埋め込み型半導体レ−ザの製造方法
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
JPH0797689B2 (ja) * 1987-05-18 1995-10-18 株式会社東芝 半導体レ−ザ素子
JPH0614575B2 (ja) * 1987-07-10 1994-02-23 シャープ株式会社 半導体レーザ素子
EP0302732B1 (de) * 1987-08-04 1993-10-13 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung
JPH0671121B2 (ja) * 1987-09-04 1994-09-07 シャープ株式会社 半導体レーザ装置
JPH01143285A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体超格子の無秩序化方法及び半導体レーザ装置
JPH0221683A (ja) * 1988-07-08 1990-01-24 Mitsubishi Electric Corp 半導体レーザ装置
JP2522021B2 (ja) * 1988-07-22 1996-08-07 日本電気株式会社 半導体レ―ザ
JPH0254596A (ja) * 1988-08-18 1990-02-23 Mitsubishi Electric Corp 半導体レーザ

Also Published As

Publication number Publication date
EP0422941A3 (en) 1991-10-23
KR940011262B1 (ko) 1994-12-03
JPH03126283A (ja) 1991-05-29
EP0422941A2 (de) 1991-04-17
US5242856A (en) 1993-09-07
KR910008876A (ko) 1991-05-31
DE69026183T2 (de) 1996-09-12
EP0422941B1 (de) 1996-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee