DE68922734D1 - VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS. - Google Patents
VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.Info
- Publication number
- DE68922734D1 DE68922734D1 DE68922734T DE68922734T DE68922734D1 DE 68922734 D1 DE68922734 D1 DE 68922734D1 DE 68922734 T DE68922734 T DE 68922734T DE 68922734 T DE68922734 T DE 68922734T DE 68922734 D1 DE68922734 D1 DE 68922734D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- producing
- layer oxide
- oxide super
- super ladder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/734—From organometallic precursors, e.g. acetylacetonates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6030888 | 1988-03-16 | ||
PCT/JP1989/000277 WO1989008605A1 (en) | 1988-03-16 | 1989-03-15 | Process for producing thin-film oxide superconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922734D1 true DE68922734D1 (de) | 1995-06-22 |
DE68922734T2 DE68922734T2 (de) | 1995-09-14 |
Family
ID=13138402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922734T Revoked DE68922734T2 (de) | 1988-03-16 | 1989-03-15 | VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS. |
Country Status (4)
Country | Link |
---|---|
US (3) | US5158931A (de) |
EP (1) | EP0431160B1 (de) |
DE (1) | DE68922734T2 (de) |
WO (1) | WO1989008605A1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE124574T1 (de) * | 1989-04-10 | 1995-07-15 | Imec Inter Uni Micro Electr | Verfahren zum aufbringen einer schicht aus supraleitenden materialien und geeignete anordnung. |
JPH02310363A (ja) * | 1989-05-24 | 1990-12-26 | Mitsubishi Electric Corp | レーザ蒸着装置 |
US5260267A (en) * | 1989-07-24 | 1993-11-09 | Sumitomo Electric Industries, Ltd. | Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2 O3 |
US5571169A (en) | 1993-06-07 | 1996-11-05 | Endovascular Instruments, Inc. | Anti-stenotic method and product for occluded and partially occluded arteries |
CA2092530A1 (en) * | 1990-10-16 | 1992-04-17 | Timothy W. James | In situ growth of superconducting films |
US5779802A (en) * | 1990-12-10 | 1998-07-14 | Imec V.Z.W. | Thin film deposition chamber with ECR-plasma source |
CN1037793C (zh) * | 1992-01-28 | 1998-03-18 | 华中理工大学 | 激光沉积大面积超导膜的方法及其装置 |
JPH05302163A (ja) * | 1992-04-27 | 1993-11-16 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜の成膜方法 |
DE4229399C2 (de) * | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
GB2303379B (en) * | 1992-11-30 | 1997-05-28 | Mitsubishi Electric Corp | Thin film forming apparatus using laser |
US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
AU8070294A (en) * | 1993-07-15 | 1995-02-13 | President And Fellows Of Harvard College | Extended nitride material comprising beta -c3n4 |
KR0168699B1 (ko) * | 1993-09-27 | 1999-02-01 | 사토 후미오 | 여기산소 또는 여기가스의 생성방법 및 공급방법 |
US5411772A (en) * | 1994-01-25 | 1995-05-02 | Rockwell International Corporation | Method of laser ablation for uniform thin film deposition |
US5443863A (en) * | 1994-03-16 | 1995-08-22 | Auburn University | Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge |
US5490912A (en) * | 1994-05-31 | 1996-02-13 | The Regents Of The University Of California | Apparatus for laser assisted thin film deposition |
DE19510318B4 (de) * | 1995-03-22 | 2004-02-19 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten |
JP3073906B2 (ja) * | 1995-03-27 | 2000-08-07 | 財団法人国際超電導産業技術研究センター | 超電導デバイスの製造方法 |
US6652922B1 (en) * | 1995-06-15 | 2003-11-25 | Alliedsignal Inc. | Electron-beam processed films for microelectronics structures |
DE19631101C2 (de) * | 1996-08-02 | 1999-05-20 | Siemens Ag | Beschichtungsapparatur für oxidische Materialien |
JP3704258B2 (ja) * | 1998-09-10 | 2005-10-12 | 松下電器産業株式会社 | 薄膜形成方法 |
US20010052323A1 (en) * | 1999-02-17 | 2001-12-20 | Ellie Yieh | Method and apparatus for forming material layers from atomic gasses |
US6826222B2 (en) | 1999-08-27 | 2004-11-30 | Alan E. Hill | Electric oxygen iodine laser |
US7215697B2 (en) * | 1999-08-27 | 2007-05-08 | Hill Alan E | Matched impedance controlled avalanche driver |
AU2422401A (en) * | 1999-08-27 | 2001-04-17 | Alan E. Hill | Electric oxygen iodine laser |
US6638857B1 (en) * | 2000-03-30 | 2003-10-28 | Triquint Technology Holding Co. | E-beam deposition method and apparatus for providing high purity oxide films |
US20030054105A1 (en) * | 2001-08-14 | 2003-03-20 | Hammond Robert H. | Film growth at low pressure mediated by liquid flux and induced by activated oxygen |
US20030157269A1 (en) * | 2002-02-20 | 2003-08-21 | University Of Washington | Method and apparatus for precision coating of molecules on the surfaces of materials and devices |
JP3910466B2 (ja) * | 2002-02-26 | 2007-04-25 | 独立行政法人科学技術振興機構 | 半導体又は絶縁体/金属・層状複合クラスタの作製方法及び製造装置 |
US8182862B2 (en) * | 2003-06-05 | 2012-05-22 | Superpower Inc. | Ion beam-assisted high-temperature superconductor (HTS) deposition for thick film tape |
JP5273495B2 (ja) * | 2005-12-13 | 2013-08-28 | 独立行政法人産業技術総合研究所 | クラスター成膜装置及び成膜方法、並びにクラスター生成装置及び生成方法 |
KR100772014B1 (ko) * | 2006-07-14 | 2007-10-31 | 한국전기연구원 | 보조 클러스트빔 분사에 의한 고온 초전도막 제조방법,제조장치, 이 방법에 의해 제조되는 고온 초전도막 |
DE102008028542B4 (de) * | 2008-06-16 | 2012-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion |
JP5866815B2 (ja) * | 2011-06-21 | 2016-02-24 | 株式会社アルバック | 成膜方法 |
RU2508576C1 (ru) * | 2012-07-26 | 2014-02-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Поволжский государственный технологический университет | Способ электроискрового формирования тонкопленочной втсп схемы |
RU2676720C1 (ru) * | 2018-03-28 | 2019-01-10 | Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук | Способ вакуумного ионно-плазменного низкотемпературного осаждения нанокристаллического покрытия из оксида алюминия |
CN112899617B (zh) * | 2019-12-04 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 形成耐等离子体涂层的方法、装置、零部件和等离子体处理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
JPS5773178A (en) * | 1980-10-23 | 1982-05-07 | Hitachi Ltd | Production of oxide |
JPS63192857A (ja) * | 1987-02-05 | 1988-08-10 | Sumitomo Electric Ind Ltd | 超電導薄膜の作製法 |
JPS63241823A (ja) * | 1987-03-27 | 1988-10-07 | Nissin Electric Co Ltd | 超電導薄膜の製造方法 |
JPS63239151A (ja) * | 1987-03-27 | 1988-10-05 | Sumitomo Electric Ind Ltd | 超電導セラミツクスの形成方法 |
JPS63239742A (ja) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | 薄膜超電導体の製造方法 |
CA1332324C (en) * | 1987-03-30 | 1994-10-11 | Jun Shioya | Method for producing thin film of oxide superconductor |
EP0288001B1 (de) * | 1987-04-20 | 1993-01-13 | Nissin Electric Company, Limited | Verfahren zur Herstellung einer supraleitenden dünnen Schicht und Anordnung zu seiner Durchführung |
DE3886586T2 (de) * | 1987-05-26 | 1994-04-28 | Sumitomo Electric Industries | Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid. |
JPS6421973A (en) * | 1987-07-16 | 1989-01-25 | Nissin Electric Co Ltd | Device for manufacturing superconductive material |
JPS6439783A (en) * | 1987-08-06 | 1989-02-10 | Matsushita Electric Ind Co Ltd | Manufacture of superconducting element |
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
JPH0791152B2 (ja) * | 1987-08-31 | 1995-10-04 | 松下電器産業株式会社 | 超伝導体薄膜の製造方法 |
CA1338202C (en) * | 1988-02-10 | 1996-04-02 | Robert George Charles | Chemical vapor deposition of oxide films containing alkaline earth metals from metal-organic sources |
US4882023A (en) * | 1988-03-14 | 1989-11-21 | Motorola, Inc. | Method and system for producing thin films |
US4874741A (en) * | 1988-04-14 | 1989-10-17 | The Research Foundation Of State University Of New York | Non-enhanced laser evaporation of oxide superconductors |
WO1990002215A1 (en) * | 1988-08-19 | 1990-03-08 | Regents Of The University Of Minnesota | Preparation of superconductive ceramic oxides using ozone |
-
1989
- 1989-03-15 EP EP89903216A patent/EP0431160B1/de not_active Revoked
- 1989-03-15 DE DE68922734T patent/DE68922734T2/de not_active Revoked
- 1989-03-15 WO PCT/JP1989/000277 patent/WO1989008605A1/ja not_active Application Discontinuation
- 1989-03-15 US US07/439,388 patent/US5158931A/en not_active Expired - Lifetime
-
1992
- 1992-06-23 US US07/888,627 patent/US5284824A/en not_active Expired - Lifetime
-
1993
- 1993-10-25 US US08/140,398 patent/US5374613A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1989008605A1 (en) | 1989-09-21 |
US5158931A (en) | 1992-10-27 |
US5374613A (en) | 1994-12-20 |
EP0431160A1 (de) | 1991-06-12 |
DE68922734T2 (de) | 1995-09-14 |
EP0431160B1 (de) | 1995-05-17 |
EP0431160A4 (de) | 1991-03-18 |
US5284824A (en) | 1994-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8331 | Complete revocation |