JP5866815B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP5866815B2 JP5866815B2 JP2011137349A JP2011137349A JP5866815B2 JP 5866815 B2 JP5866815 B2 JP 5866815B2 JP 2011137349 A JP2011137349 A JP 2011137349A JP 2011137349 A JP2011137349 A JP 2011137349A JP 5866815 B2 JP5866815 B2 JP 5866815B2
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- gas
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- water vapor
- film
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- 238000000151 deposition Methods 0.000 title description 3
- 239000007789 gas Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 54
- 238000001704 evaporation Methods 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 230000008020 evaporation Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 238000007740 vapor deposition Methods 0.000 claims description 23
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 18
- 229910001882 dioxygen Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910020923 Sn-O Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
Claims (2)
- In−Sn−O系の材料を蒸発材料とし、この蒸発材料を処理室内に配置して減圧下にて蒸発させ、この処理室内に配置した基板表面に蒸着により透明導電膜を成膜する成膜方法において、
成膜時に処理室内に酸素ガスと水蒸気ガスとを導入し、
前記処理室内で水蒸気ガスを導入する第1のガス導入口を基板の蒸着面に向け、この基板に向かって直接水蒸気ガスを供給し、前記基板の蒸着面に水蒸気ガスを吸着させ、吸着させた水蒸気ガスの分子が蒸発材料と共にOHとして取り込まれるようにし、
前記第1のガス導入口から基板に向かって水蒸気ガスのみが供給されるようにしたことを特徴とする成膜方法。 - 前記処理室内で酸素ガスを導入する第2のガス導入口を、処理室を画成する壁面に向け、この壁面に向かって酸素ガスを供給するようにしたことを特徴とする請求項1記載の成膜方法。
Priority Applications (1)
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JP2011137349A JP5866815B2 (ja) | 2011-06-21 | 2011-06-21 | 成膜方法 |
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JP2011137349A JP5866815B2 (ja) | 2011-06-21 | 2011-06-21 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013001991A JP2013001991A (ja) | 2013-01-07 |
JP5866815B2 true JP5866815B2 (ja) | 2016-02-24 |
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JP2011137349A Active JP5866815B2 (ja) | 2011-06-21 | 2011-06-21 | 成膜方法 |
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JP (1) | JP5866815B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016069722A (ja) * | 2014-10-01 | 2016-05-09 | 国立大学法人北見工業大学 | 薄膜製造装置 |
CN104746003B (zh) * | 2014-12-24 | 2017-09-26 | 信利(惠州)智能显示有限公司 | 氧化铟锡低温镀膜方法 |
CN105331929A (zh) * | 2015-11-04 | 2016-02-17 | 信利(惠州)智能显示有限公司 | 氧化铟锡镀膜方法 |
KR102251016B1 (ko) * | 2017-05-31 | 2021-05-12 | 가부시키가이샤 아루박 | 성막 장치 및 성막 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5170492A (en) * | 1974-12-16 | 1976-06-18 | Kogyo Gijutsuin | Teiteikono sankainjiumudodenmakuno seizoho |
JPS54130497A (en) * | 1978-03-31 | 1979-10-09 | Agency Of Ind Science & Technol | Production of indium oxide ( ) film |
JPS55104013A (en) * | 1979-02-05 | 1980-08-09 | Nitto Electric Ind Co | Method of fabricating transparent conductive membrane |
JPS569906A (en) * | 1979-07-04 | 1981-01-31 | Nitto Electric Ind Co | Method of manufacturing transparent conductive film |
JPS569905A (en) * | 1979-07-04 | 1981-01-31 | Nitto Electric Ind Co | Method of manufacturing transparent conductive film |
JPS6053411B2 (ja) * | 1979-12-15 | 1985-11-26 | 日東電工株式会社 | 透明導電性膜の製造法 |
JPS58165212A (ja) * | 1982-03-26 | 1983-09-30 | 株式会社日立製作所 | 透明導電膜の形成方法 |
JPH0759747B2 (ja) * | 1988-03-09 | 1995-06-28 | 日本真空技術株式会社 | 透明導電膜の製造方法 |
US5158931A (en) * | 1988-03-16 | 1992-10-27 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
JP2894564B2 (ja) * | 1988-10-20 | 1999-05-24 | アネルバ 株式会社 | 連続透明導電性薄膜作成装置 |
JPH0817268A (ja) * | 1994-07-01 | 1996-01-19 | Sumitomo Bakelite Co Ltd | 透明導電膜の製造方法 |
JPH08158041A (ja) * | 1994-11-29 | 1996-06-18 | Hitachi Ltd | 透明導電膜の製造方法および装置 |
JPH11172416A (ja) * | 1997-12-10 | 1999-06-29 | Nippon Sheet Glass Co Ltd | 真空蒸着装置およびそれを用いたito被膜の形成方法 |
JP2001030409A (ja) * | 1999-07-16 | 2001-02-06 | Teijin Ltd | 透明導電積層体の製造方法 |
JP3453329B2 (ja) * | 1999-08-20 | 2003-10-06 | 三菱重工業株式会社 | 透明導電膜及びその製造方法 |
JP2002030426A (ja) * | 2000-07-07 | 2002-01-31 | Sumitomo Heavy Ind Ltd | 成膜方法及び装置 |
JP2004063607A (ja) * | 2002-07-26 | 2004-02-26 | Sony Corp | 薄膜製造方法および薄膜製造装置 |
JP2008007800A (ja) * | 2006-06-27 | 2008-01-17 | Seiko Epson Corp | めっき基板の製造方法 |
JP5073624B2 (ja) * | 2008-09-16 | 2012-11-14 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
WO2010073666A1 (ja) * | 2008-12-26 | 2010-07-01 | キヤノンアネルバ株式会社 | ガス供給装置、真空処理装置及び電子デバイスの製造方法 |
WO2010131363A1 (ja) * | 2009-05-15 | 2010-11-18 | 富士通株式会社 | 一酸化炭素ガス発生装置および一酸化炭素ガス発生方法 |
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