JP2013001991A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2013001991A JP2013001991A JP2011137349A JP2011137349A JP2013001991A JP 2013001991 A JP2013001991 A JP 2013001991A JP 2011137349 A JP2011137349 A JP 2011137349A JP 2011137349 A JP2011137349 A JP 2011137349A JP 2013001991 A JP2013001991 A JP 2013001991A
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- gas
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- vapor deposition
- water vapor
- film
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- 238000000151 deposition Methods 0.000 title abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000001704 evaporation Methods 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 31
- 230000008020 evaporation Effects 0.000 claims abstract description 30
- 238000007740 vapor deposition Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 19
- 229910020923 Sn-O Inorganic materials 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 13
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000002474 experimental method Methods 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
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- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
【解決手段】In−Sn−O系の材料を蒸発材料3とし、この蒸発材料3を蒸着室1a内に配置して減圧下にて蒸発させ、この蒸着室1a内に配置した基板W表面に蒸着により透明導電膜を成膜する成膜方法において、成膜時に蒸着室1a内に酸素ガスと水蒸気ガスとを導入する。蒸着室1a内で水蒸気ガスを導入するガス導入口83aを基板Wの蒸着面に向け、基板Wに向かって直接水蒸気ガスが供給されるようにする。
【選択図】図1
Description
Claims (3)
- In−Sn−O系の材料を蒸発材料とし、この蒸発材料を処理室内に配置して減圧下にて蒸発させ、この処理室内に配置した基板表面に蒸着により透明導電膜を成膜する成膜方法において、
成膜時に処理室内に酸素ガスと水蒸気ガスとを導入することを特徴とする成膜方法。 - 前記処理室内で水蒸気ガスを導入する第1のガス導入口を基板の蒸着面に向け、この基板に向かって直接水蒸気ガスが供給されるようにしたことを特徴とする請求項1記載の成膜方法。
- 前記処理室内で酸素ガスを導入する第2のガス導入口を、処理室を画成する壁面に向け、この壁面に向かって酸素ガスを供給するようにしたことを特徴とする請求項1または請求項2記載の成膜方法。
Priority Applications (1)
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JP2011137349A JP5866815B2 (ja) | 2011-06-21 | 2011-06-21 | 成膜方法 |
Applications Claiming Priority (1)
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JP2011137349A JP5866815B2 (ja) | 2011-06-21 | 2011-06-21 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013001991A true JP2013001991A (ja) | 2013-01-07 |
JP5866815B2 JP5866815B2 (ja) | 2016-02-24 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104746003A (zh) * | 2014-12-24 | 2015-07-01 | 信利(惠州)智能显示有限公司 | 氧化铟锡低温镀膜方法 |
CN105331929A (zh) * | 2015-11-04 | 2016-02-17 | 信利(惠州)智能显示有限公司 | 氧化铟锡镀膜方法 |
JP2016069722A (ja) * | 2014-10-01 | 2016-05-09 | 国立大学法人北見工業大学 | 薄膜製造装置 |
WO2018220907A1 (ja) * | 2017-05-31 | 2018-12-06 | 株式会社アルバック | 成膜装置及び成膜方法 |
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JPS5170492A (en) * | 1974-12-16 | 1976-06-18 | Kogyo Gijutsuin | Teiteikono sankainjiumudodenmakuno seizoho |
JPS54130497A (en) * | 1978-03-31 | 1979-10-09 | Agency Of Ind Science & Technol | Production of indium oxide ( ) film |
JPS55104013A (en) * | 1979-02-05 | 1980-08-09 | Nitto Electric Ind Co | Method of fabricating transparent conductive membrane |
JPS569906A (en) * | 1979-07-04 | 1981-01-31 | Nitto Electric Ind Co | Method of manufacturing transparent conductive film |
JPS569905A (en) * | 1979-07-04 | 1981-01-31 | Nitto Electric Ind Co | Method of manufacturing transparent conductive film |
JPS5686408A (en) * | 1979-12-15 | 1981-07-14 | Nitto Electric Ind Co | Method of forming transparent conductive film |
JPS58165212A (ja) * | 1982-03-26 | 1983-09-30 | 株式会社日立製作所 | 透明導電膜の形成方法 |
JPH02163363A (ja) * | 1988-03-09 | 1990-06-22 | Ulvac Corp | 透明導電膜の製造方法 |
US5374613A (en) * | 1988-03-16 | 1994-12-20 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
JPH02112112A (ja) * | 1988-10-20 | 1990-04-24 | Anelva Corp | 連続透明導電性薄膜作成方法および装置 |
JPH0817268A (ja) * | 1994-07-01 | 1996-01-19 | Sumitomo Bakelite Co Ltd | 透明導電膜の製造方法 |
JPH08158041A (ja) * | 1994-11-29 | 1996-06-18 | Hitachi Ltd | 透明導電膜の製造方法および装置 |
JPH11172416A (ja) * | 1997-12-10 | 1999-06-29 | Nippon Sheet Glass Co Ltd | 真空蒸着装置およびそれを用いたito被膜の形成方法 |
JP2001030409A (ja) * | 1999-07-16 | 2001-02-06 | Teijin Ltd | 透明導電積層体の製造方法 |
JP2001059157A (ja) * | 1999-08-20 | 2001-03-06 | Mitsubishi Heavy Ind Ltd | 透明導電膜及びその製造方法 |
JP2002030426A (ja) * | 2000-07-07 | 2002-01-31 | Sumitomo Heavy Ind Ltd | 成膜方法及び装置 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016069722A (ja) * | 2014-10-01 | 2016-05-09 | 国立大学法人北見工業大学 | 薄膜製造装置 |
CN104746003A (zh) * | 2014-12-24 | 2015-07-01 | 信利(惠州)智能显示有限公司 | 氧化铟锡低温镀膜方法 |
CN104746003B (zh) * | 2014-12-24 | 2017-09-26 | 信利(惠州)智能显示有限公司 | 氧化铟锡低温镀膜方法 |
CN105331929A (zh) * | 2015-11-04 | 2016-02-17 | 信利(惠州)智能显示有限公司 | 氧化铟锡镀膜方法 |
WO2018220907A1 (ja) * | 2017-05-31 | 2018-12-06 | 株式会社アルバック | 成膜装置及び成膜方法 |
KR20190138670A (ko) * | 2017-05-31 | 2019-12-13 | 가부시키가이샤 아루박 | 성막 장치 및 성막 방법 |
CN110678575A (zh) * | 2017-05-31 | 2020-01-10 | 株式会社爱发科 | 成膜装置和成膜方法 |
TWI714836B (zh) * | 2017-05-31 | 2021-01-01 | 日商愛發科股份有限公司 | 成膜裝置及成膜方法 |
KR102251016B1 (ko) * | 2017-05-31 | 2021-05-12 | 가부시키가이샤 아루박 | 성막 장치 및 성막 방법 |
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