DE69025520D1 - Speicher mit verbessertem Bitzeilenausgleich - Google Patents
Speicher mit verbessertem BitzeilenausgleichInfo
- Publication number
- DE69025520D1 DE69025520D1 DE69025520T DE69025520T DE69025520D1 DE 69025520 D1 DE69025520 D1 DE 69025520D1 DE 69025520 T DE69025520 T DE 69025520T DE 69025520 T DE69025520 T DE 69025520T DE 69025520 D1 DE69025520 D1 DE 69025520D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- bit line
- line compensation
- improved bit
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/402,733 US5043945A (en) | 1989-09-05 | 1989-09-05 | Memory with improved bit line and write data line equalization |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025520D1 true DE69025520D1 (de) | 1996-04-04 |
DE69025520T2 DE69025520T2 (de) | 1996-08-29 |
Family
ID=23593101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025520T Expired - Fee Related DE69025520T2 (de) | 1989-09-05 | 1990-08-31 | Speicher mit verbessertem Bitzeilenausgleich |
Country Status (6)
Country | Link |
---|---|
US (1) | US5043945A (de) |
EP (1) | EP0416827B1 (de) |
JP (1) | JP3131987B2 (de) |
KR (1) | KR960012049B1 (de) |
DE (1) | DE69025520T2 (de) |
HK (1) | HK1003808A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810728B2 (ja) * | 1990-02-01 | 1996-01-31 | 株式会社東芝 | 半導体記憶装置 |
US5398206A (en) * | 1990-03-02 | 1995-03-14 | Hitachi, Ltd. | Semiconductor memory device with data error compensation |
JP2892757B2 (ja) * | 1990-03-23 | 1999-05-17 | 三菱電機株式会社 | 半導体集積回路装置 |
US5229967A (en) * | 1990-09-04 | 1993-07-20 | Nogle Scott G | BICMOS sense circuit for sensing data during a read cycle of a memory |
US5475635A (en) * | 1990-10-01 | 1995-12-12 | Motorola, Inc. | Memory with a combined global data line load and multiplexer |
KR940001644B1 (ko) * | 1991-05-24 | 1994-02-28 | 삼성전자 주식회사 | 메모리 장치의 입출력 라인 프리차아지 방법 |
US5228106A (en) * | 1991-05-30 | 1993-07-13 | Integrated Device Technology, Inc. | Track-and-regenerate amplifiers and memories using such amplifiers |
WO1992022070A1 (en) * | 1991-05-30 | 1992-12-10 | Integrated Device Technology, Inc. | Static memories and methods of reading static memories |
KR940008296B1 (ko) * | 1991-06-19 | 1994-09-10 | 삼성전자 주식회사 | 고속 센싱동작을 수행하는 센스앰프 |
FR2694826B1 (fr) * | 1992-08-13 | 1994-09-16 | Thomson Composants Militaires | Circuit intégré de mémoire avec protection contre des perturbations. |
JP2894115B2 (ja) * | 1992-11-10 | 1999-05-24 | 松下電器産業株式会社 | カラム選択回路 |
US6105152A (en) | 1993-04-13 | 2000-08-15 | Micron Technology, Inc. | Devices and methods for testing cell margin of memory devices |
US5416744A (en) * | 1994-03-08 | 1995-05-16 | Motorola Inc. | Memory having bit line load with automatic bit line precharge and equalization |
KR0127216B1 (ko) * | 1994-11-24 | 1998-04-02 | 문정환 | 반도체 메모리장치 |
US5663908A (en) * | 1995-07-06 | 1997-09-02 | Micron Quantum Devices, Inc. | Data input/output circuit for performing high speed memory data read operation |
DE19632780A1 (de) * | 1996-08-15 | 1998-02-19 | Ibm | Verbesserter Restore für Speicherzellen mittels negativer Bitline-Selektion |
US5777935A (en) * | 1997-03-12 | 1998-07-07 | Motorola, Inc. | Memory device with fast write recovery and related write recovery method |
US6205058B1 (en) | 1997-04-04 | 2001-03-20 | Micron Technology, Inc. | Data input/output circuit for performing high speed memory data read operation |
US5828612A (en) * | 1997-10-27 | 1998-10-27 | Motorola, Inc. | Method and circuit for controlling a precharge cycle of a memory device |
US6590237B2 (en) * | 1997-12-26 | 2003-07-08 | Samsung Electronics Co., Ltd. | Layout structure for dynamic random access memory |
US6341099B1 (en) * | 2000-09-29 | 2002-01-22 | Intel Corporation | Reducing power consumption in a data storage device |
JP4088954B2 (ja) * | 2002-03-04 | 2008-05-21 | 日本電気株式会社 | 半導体記憶装置の読み出し回路 |
JP4090967B2 (ja) * | 2003-08-29 | 2008-05-28 | 松下電器産業株式会社 | 半導体記憶装置 |
US7218564B2 (en) * | 2004-07-16 | 2007-05-15 | Promos Technologies Inc. | Dual equalization devices for long data line pairs |
US9053776B2 (en) * | 2012-11-08 | 2015-06-09 | SK Hynix Inc. | Setting information storage circuit and integrated circuit chip including the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110840A (en) * | 1976-12-22 | 1978-08-29 | Motorola Inc. | Sense line charging system for random access memory |
JPS595989B2 (ja) * | 1980-02-16 | 1984-02-08 | 富士通株式会社 | スタティック型ランダムアクセスメモリ |
US4355377A (en) * | 1980-06-30 | 1982-10-19 | Inmos Corporation | Asynchronously equillibrated and pre-charged static ram |
JPS5812193A (ja) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | 半導体メモリ |
US4712194A (en) * | 1984-06-08 | 1987-12-08 | Matsushita Electric Industrial Co., Ltd. | Static random access memory |
JPS6132296A (ja) * | 1984-07-23 | 1986-02-14 | Oki Electric Ind Co Ltd | 半導体メモリ装置 |
US4636991A (en) * | 1985-08-16 | 1987-01-13 | Motorola, Inc. | Summation of address transition signals |
US4712197A (en) * | 1986-01-28 | 1987-12-08 | Motorola, Inc. | High speed equalization in a memory |
US4751680A (en) * | 1986-03-03 | 1988-06-14 | Motorola, Inc. | Bit line equalization in a memory |
JPS63166090A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | スタティック型メモリ |
JPS63211190A (ja) * | 1987-02-26 | 1988-09-02 | Nec Corp | メモリ回路用内部クロツク信号発生器 |
JP2569538B2 (ja) * | 1987-03-17 | 1997-01-08 | ソニー株式会社 | メモリ装置 |
JP2572607B2 (ja) * | 1987-09-25 | 1997-01-16 | セイコーエプソン株式会社 | 半導体記憶装置 |
US4802129A (en) * | 1987-12-03 | 1989-01-31 | Motorola, Inc. | RAM with dual precharge circuit and write recovery circuitry |
EP0320556B1 (de) * | 1987-12-15 | 1991-02-27 | International Business Machines Corporation | Referenz-Spannungsgenerator für CMOS-Speicher |
US4899317A (en) * | 1988-02-01 | 1990-02-06 | Motorola, Inc. | Bit line precharge in a bimos ram |
US4926383A (en) * | 1988-02-02 | 1990-05-15 | National Semiconductor Corporation | BiCMOS write-recovery circuit |
-
1989
- 1989-09-05 US US07/402,733 patent/US5043945A/en not_active Expired - Fee Related
-
1990
- 1990-08-31 EP EP90309571A patent/EP0416827B1/de not_active Expired - Lifetime
- 1990-08-31 DE DE69025520T patent/DE69025520T2/de not_active Expired - Fee Related
- 1990-08-31 KR KR1019900013586A patent/KR960012049B1/ko not_active IP Right Cessation
- 1990-09-05 JP JP02235493A patent/JP3131987B2/ja not_active Expired - Lifetime
-
1998
- 1998-04-09 HK HK98102984A patent/HK1003808A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910006992A (ko) | 1991-04-30 |
EP0416827A2 (de) | 1991-03-13 |
EP0416827A3 (en) | 1993-04-28 |
US5043945A (en) | 1991-08-27 |
HK1003808A1 (en) | 1998-11-06 |
DE69025520T2 (de) | 1996-08-29 |
JP3131987B2 (ja) | 2001-02-05 |
KR960012049B1 (ko) | 1996-09-11 |
JPH03100992A (ja) | 1991-04-25 |
EP0416827B1 (de) | 1996-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |