DE69021917T2 - Verfahren zur gerichteten Modulation der Zusammensetzung oder Dotierung von Halbleitern, insbesondere zur Realisation von planaren monolithischen elektronischen Komponenten sowie Verwendung und produkte dafür. - Google Patents

Verfahren zur gerichteten Modulation der Zusammensetzung oder Dotierung von Halbleitern, insbesondere zur Realisation von planaren monolithischen elektronischen Komponenten sowie Verwendung und produkte dafür.

Info

Publication number
DE69021917T2
DE69021917T2 DE69021917T DE69021917T DE69021917T2 DE 69021917 T2 DE69021917 T2 DE 69021917T2 DE 69021917 T DE69021917 T DE 69021917T DE 69021917 T DE69021917 T DE 69021917T DE 69021917 T2 DE69021917 T2 DE 69021917T2
Authority
DE
Germany
Prior art keywords
layer
doping
epitaxy
substrate
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021917T
Other languages
German (de)
English (en)
Other versions
DE69021917D1 (de
Inventor
Leonidas Karapiperis
Didier Pribat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE69021917D1 publication Critical patent/DE69021917D1/de
Publication of DE69021917T2 publication Critical patent/DE69021917T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H10P14/271—
    • H10P14/2905—
    • H10P14/2911—
    • H10P14/3211—
    • H10P14/3221—
    • H10P14/3421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69021917T 1989-03-31 1990-03-23 Verfahren zur gerichteten Modulation der Zusammensetzung oder Dotierung von Halbleitern, insbesondere zur Realisation von planaren monolithischen elektronischen Komponenten sowie Verwendung und produkte dafür. Expired - Fee Related DE69021917T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8904257A FR2645345A1 (fr) 1989-03-31 1989-03-31 Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants

Publications (2)

Publication Number Publication Date
DE69021917D1 DE69021917D1 (de) 1995-10-05
DE69021917T2 true DE69021917T2 (de) 1996-02-15

Family

ID=9380261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021917T Expired - Fee Related DE69021917T2 (de) 1989-03-31 1990-03-23 Verfahren zur gerichteten Modulation der Zusammensetzung oder Dotierung von Halbleitern, insbesondere zur Realisation von planaren monolithischen elektronischen Komponenten sowie Verwendung und produkte dafür.

Country Status (5)

Country Link
US (1) US5294564A (enExample)
EP (1) EP0390661B1 (enExample)
JP (1) JP3126974B2 (enExample)
DE (1) DE69021917T2 (enExample)
FR (1) FR2645345A1 (enExample)

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FR2689680B1 (fr) * 1992-04-02 2001-08-10 Thomson Csf Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques.
FR2748849B1 (fr) * 1996-05-20 1998-06-19 Commissariat Energie Atomique Systeme de composants a hybrider et procede d'hybridation autorisant des dilatations thermiques
US5993544A (en) * 1998-03-30 1999-11-30 Neocera, Inc. Non-linear optical thin film layer system
FR2780808B1 (fr) 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
JP3470623B2 (ja) * 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置
JP3707726B2 (ja) * 2000-05-31 2005-10-19 Ｈｏｙａ株式会社 炭化珪素の製造方法、複合材料の製造方法
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
FR2832995B1 (fr) * 2001-12-04 2004-02-27 Thales Sa Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) * 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
KR100728173B1 (ko) 2003-03-07 2007-06-13 앰버웨이브 시스템즈 코포레이션 쉘로우 트렌치 분리법
US6972228B2 (en) * 2003-03-12 2005-12-06 Intel Corporation Method of forming an element of a microelectronic circuit
US7838657B2 (en) * 2004-12-03 2010-11-23 University Of Massachusetts Spinal muscular atrophy (SMA) treatment via targeting of SMN2 splice site inhibitory sequences
SI3308788T1 (sl) * 2005-06-23 2019-01-31 Biogen Ma Inc. Sestave in metode za modulacijo združevanja SMN2
CN115227710A (zh) 2009-06-17 2022-10-25 冷泉港实验室 用于在对象中调节smn2剪接的组合物和方法
IT1399129B1 (it) 2010-04-01 2013-04-05 Paoletti Sistema di sorveglianza adattivo modulare per mezzi strutture persone
US20120025195A1 (en) * 2010-07-28 2012-02-02 Massachusetts Institute Of Technology Confined Lateral Growth of Crystalline Material
EP2943225A4 (en) 2013-01-09 2016-07-13 Ionis Pharmaceuticals Inc COMPOSITIONS AND METHODS FOR MODULATING SMN2 DISTRIBUTION IN THE BODY OF A PATIENT
US9856474B2 (en) 2013-01-16 2018-01-02 Iowa State University Research Foundation, Inc. Deep intronic target for splicing correction on spinal muscular atrophy gene
DE102014205364A1 (de) * 2014-03-21 2015-09-24 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Herstellung von Halbleiter-auf-Isolator-Schichtstrukturen
MA39835A (fr) 2014-04-17 2017-02-22 Biogen Ma Inc Compositions et procédés de modulation de l'épissage du smn2 chez un patient
BR112017004056A2 (pt) 2014-09-12 2017-12-05 Biogen Ma Inc composições e métodos para detecção da proteína smn em um indivíduo e tratamento de um indivíduo
US11198867B2 (en) 2016-06-16 2021-12-14 Ionis Pharmaceuticals, Inc. Combinations for the modulation of SMN expression
IL295605A (en) 2020-02-28 2022-10-01 Ionis Pharmaceuticals Inc Compounds and methods for modulating smn2
US12402398B2 (en) 2022-04-06 2025-08-26 International Business Machines Corporation Co-integrated resonant tunneling diode and field effect transistor

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JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
EP0049286B1 (en) * 1980-04-10 1988-03-02 Massachusetts Institute Of Technology Methods of producing sheets of crystalline material and devices amde therefrom
JPS5961031A (ja) * 1982-09-30 1984-04-07 Agency Of Ind Science & Technol 半導体薄膜の製造方法
US4725112A (en) * 1985-08-06 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide
JPS6252963A (ja) * 1985-09-02 1987-03-07 Fujitsu Ltd バイポ−ラトランジスタの製造方法
JPS6381855A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp ヘテロ接合バイポ−ラトランジスタの製造方法
JPS63174366A (ja) * 1987-01-14 1988-07-18 Fujitsu Ltd 半導体装置の製造方法
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant

Also Published As

Publication number Publication date
FR2645345A1 (fr) 1990-10-05
JP3126974B2 (ja) 2001-01-22
JPH02285631A (ja) 1990-11-22
FR2645345B1 (enExample) 1994-04-22
US5294564A (en) 1994-03-15
EP0390661A1 (fr) 1990-10-03
EP0390661B1 (fr) 1995-08-30
DE69021917D1 (de) 1995-10-05

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