DE69016230T2 - Halbleiterlaser und Verfahren zur Herstellung desselben. - Google Patents
Halbleiterlaser und Verfahren zur Herstellung desselben.Info
- Publication number
- DE69016230T2 DE69016230T2 DE69016230T DE69016230T DE69016230T2 DE 69016230 T2 DE69016230 T2 DE 69016230T2 DE 69016230 T DE69016230 T DE 69016230T DE 69016230 T DE69016230 T DE 69016230T DE 69016230 T2 DE69016230 T2 DE 69016230T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- same
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/166—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising non-semiconducting materials
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1060422A JPH07109924B2 (ja) | 1989-03-13 | 1989-03-13 | 半導体レーザ装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69016230D1 DE69016230D1 (de) | 1995-03-09 |
DE69016230T2 true DE69016230T2 (de) | 1995-07-27 |
Family
ID=13141760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69016230T Expired - Fee Related DE69016230T2 (de) | 1989-03-13 | 1990-03-13 | Halbleiterlaser und Verfahren zur Herstellung desselben. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5022037A (de) |
EP (1) | EP0388149B1 (de) |
JP (1) | JPH07109924B2 (de) |
DE (1) | DE69016230T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834337B2 (ja) * | 1990-04-02 | 1996-03-29 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
JP2981315B2 (ja) * | 1990-10-19 | 1999-11-22 | シャープ株式会社 | 半導体レーザ素子 |
US5228047A (en) * | 1990-09-21 | 1993-07-13 | Sharp Kabushiki Kaisha | Semiconductor laser device and a method for producing the same |
US5491711A (en) * | 1993-11-04 | 1996-02-13 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS559480A (en) * | 1978-07-07 | 1980-01-23 | Nec Corp | Large light output, lateral mode of semiconductor laser element |
JPS5527474A (en) * | 1978-08-19 | 1980-02-27 | Arata Kogyosho:Kk | Manufacture of spherical head for use of oiler or the like of diesel engine |
JPS57170585A (en) * | 1981-04-14 | 1982-10-20 | Nec Corp | Semiconductor laser device |
JPS58110087A (ja) * | 1981-12-24 | 1983-06-30 | Fujitsu Ltd | 半導体レ−ザ装置 |
JPS60113983A (ja) * | 1983-11-26 | 1985-06-20 | Mitsubishi Electric Corp | 半導体発光装置およびその製造方法 |
JPH01138784A (ja) * | 1987-11-25 | 1989-05-31 | Nec Corp | 半導体レーザの端面保護膜形成方法 |
-
1989
- 1989-03-13 JP JP1060422A patent/JPH07109924B2/ja not_active Expired - Fee Related
-
1990
- 1990-03-08 US US07/489,180 patent/US5022037A/en not_active Expired - Lifetime
- 1990-03-13 DE DE69016230T patent/DE69016230T2/de not_active Expired - Fee Related
- 1990-03-13 EP EP90302666A patent/EP0388149B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69016230D1 (de) | 1995-03-09 |
EP0388149A3 (de) | 1991-08-07 |
EP0388149A2 (de) | 1990-09-19 |
US5022037A (en) | 1991-06-04 |
JPH02239680A (ja) | 1990-09-21 |
JPH07109924B2 (ja) | 1995-11-22 |
EP0388149B1 (de) | 1995-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |