DE69009474D1 - Methode zur Passivierung von geätzten Spiegelfacetten von Halbleiterlasern. - Google Patents
Methode zur Passivierung von geätzten Spiegelfacetten von Halbleiterlasern.Info
- Publication number
- DE69009474D1 DE69009474D1 DE69009474T DE69009474T DE69009474D1 DE 69009474 D1 DE69009474 D1 DE 69009474D1 DE 69009474 T DE69009474 T DE 69009474T DE 69009474 T DE69009474 T DE 69009474T DE 69009474 D1 DE69009474 D1 DE 69009474D1
- Authority
- DE
- Germany
- Prior art keywords
- passivation
- semiconductor lasers
- mirror facets
- etched mirror
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90810695A EP0474952B1 (de) | 1990-09-14 | 1990-09-14 | Methode zur Passivierung von geätzten Spiegelfacetten von Halbleiterlasern |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69009474D1 true DE69009474D1 (de) | 1994-07-07 |
DE69009474T2 DE69009474T2 (de) | 1994-12-01 |
Family
ID=8205954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69009474T Expired - Fee Related DE69009474T2 (de) | 1990-09-14 | 1990-09-14 | Methode zur Passivierung von geätzten Spiegelfacetten von Halbleiterlasern. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5177031A (de) |
EP (1) | EP0474952B1 (de) |
JP (1) | JPH0775266B2 (de) |
DE (1) | DE69009474T2 (de) |
Families Citing this family (65)
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US6090635A (en) * | 1992-11-17 | 2000-07-18 | Gte Laboratories Incorporated | Method for forming a semiconductor device structure having a laser portion |
US5910854A (en) | 1993-02-26 | 1999-06-08 | Donnelly Corporation | Electrochromic polymeric solid films, manufacturing electrochromic devices using such solid films, and processes for making such solid films and devices |
US5668663A (en) | 1994-05-05 | 1997-09-16 | Donnelly Corporation | Electrochromic mirrors and devices |
US5629954A (en) * | 1994-10-25 | 1997-05-13 | Trw Inc. | Semiconductor laser diode with integrated etalon |
JPH10501923A (ja) * | 1995-04-19 | 1998-02-17 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体ダイオードレーザのような光電半導体装置を製造する方法 |
US6891563B2 (en) * | 1996-05-22 | 2005-05-10 | Donnelly Corporation | Vehicular vision system |
JP3727106B2 (ja) * | 1996-04-17 | 2005-12-14 | 豊田合成株式会社 | 3族窒化物半導体レーザダイオードの製造方法 |
US5799028A (en) * | 1996-07-18 | 1998-08-25 | Sdl, Inc. | Passivation and protection of a semiconductor surface |
US5668049A (en) * | 1996-07-31 | 1997-09-16 | Lucent Technologies Inc. | Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur |
EP0898345A3 (de) * | 1997-08-13 | 2004-01-02 | Mitsubishi Chemical Corporation | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
US6124886A (en) | 1997-08-25 | 2000-09-26 | Donnelly Corporation | Modular rearview mirror assembly |
US6326613B1 (en) * | 1998-01-07 | 2001-12-04 | Donnelly Corporation | Vehicle interior mirror assembly adapted for containing a rain sensor |
US6172613B1 (en) * | 1998-02-18 | 2001-01-09 | Donnelly Corporation | Rearview mirror assembly incorporating vehicle information display |
US8294975B2 (en) | 1997-08-25 | 2012-10-23 | Donnelly Corporation | Automotive rearview mirror assembly |
US8288711B2 (en) | 1998-01-07 | 2012-10-16 | Donnelly Corporation | Interior rearview mirror system with forwardly-viewing camera and a control |
US6445287B1 (en) | 2000-02-28 | 2002-09-03 | Donnelly Corporation | Tire inflation assistance monitoring system |
US6329925B1 (en) * | 1999-11-24 | 2001-12-11 | Donnelly Corporation | Rearview mirror assembly with added feature modular display |
US6693517B2 (en) | 2000-04-21 | 2004-02-17 | Donnelly Corporation | Vehicle mirror assembly communicating wirelessly with vehicle accessories and occupants |
US6477464B2 (en) | 2000-03-09 | 2002-11-05 | Donnelly Corporation | Complete mirror-based global-positioning system (GPS) navigation solution |
WO2007053710A2 (en) | 2005-11-01 | 2007-05-10 | Donnelly Corporation | Interior rearview mirror with display |
AU2001243285A1 (en) | 2000-03-02 | 2001-09-12 | Donnelly Corporation | Video mirror systems incorporating an accessory module |
US7167796B2 (en) | 2000-03-09 | 2007-01-23 | Donnelly Corporation | Vehicle navigation system for use with a telematics system |
US7370983B2 (en) | 2000-03-02 | 2008-05-13 | Donnelly Corporation | Interior mirror assembly with display |
DE10048475C2 (de) * | 2000-09-29 | 2003-04-17 | Lumics Gmbh | Passivierung der Resonatorendflächen von Halbleiterlasern auf der Basis von III-V-Halbleitermaterial |
ES2287266T3 (es) | 2001-01-23 | 2007-12-16 | Donnelly Corporation | Sistema de iluminacion de vehiculos mejorado. |
US7255451B2 (en) | 2002-09-20 | 2007-08-14 | Donnelly Corporation | Electro-optic mirror cell |
US7581859B2 (en) | 2005-09-14 | 2009-09-01 | Donnelly Corp. | Display device for exterior rearview mirror |
JP2005508021A (ja) * | 2001-10-30 | 2005-03-24 | イクスポーネント フォトニクス,インコーポレイティド | 光電力トランスバース伝送を用いた光接合装置及び方法 |
US6918674B2 (en) | 2002-05-03 | 2005-07-19 | Donnelly Corporation | Vehicle rearview mirror system |
US7329013B2 (en) | 2002-06-06 | 2008-02-12 | Donnelly Corporation | Interior rearview mirror system with compass |
WO2003105099A1 (en) | 2002-06-06 | 2003-12-18 | Donnelly Corporation | Interior rearview mirror system with compass |
RU2205485C1 (ru) * | 2002-09-04 | 2003-05-27 | Закрытое акционерное общество "Научное и технологическое оборудование" | Способ изготовления полупроводникового лазерного диода |
WO2004103772A2 (en) | 2003-05-19 | 2004-12-02 | Donnelly Corporation | Mirror assembly for vehicle |
AU2003278863A1 (en) | 2002-09-20 | 2004-04-08 | Donnelly Corporation | Mirror reflective element assembly |
US7310177B2 (en) | 2002-09-20 | 2007-12-18 | Donnelly Corporation | Electro-optic reflective element assembly |
DE60231215D1 (de) * | 2002-10-31 | 2009-04-02 | Avago Tech Fiber Ip Sg Pte Ltd | Verfahren und Träger zur Behandlung von Facetten von photonischen Bauelementen |
US7446924B2 (en) * | 2003-10-02 | 2008-11-04 | Donnelly Corporation | Mirror reflective element assembly including electronic component |
US7308341B2 (en) | 2003-10-14 | 2007-12-11 | Donnelly Corporation | Vehicle communication system |
US7864398B2 (en) | 2004-06-08 | 2011-01-04 | Gentex Corporation | Electro-optical element including metallic films and methods for applying the same |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
EP1883855B1 (de) | 2005-05-16 | 2011-07-20 | Donnelly Corporation | Fahrzeugspiegelanordnung mit zeichen am reflektierenden teil |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7485503B2 (en) * | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8183556B2 (en) | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
CN101395521B (zh) * | 2006-03-03 | 2010-09-29 | 金泰克斯公司 | 改进的薄膜涂层、光电元件和包含这些元件的组件 |
EP2426552A1 (de) * | 2006-03-03 | 2012-03-07 | Gentex Corporation | Elektrooptische Elemente mit verbesserten Dünnfilmbeschichtungen |
US7746534B2 (en) * | 2006-12-07 | 2010-06-29 | Gentex Corporation | Thin-film coatings, electro-optic elements and assemblies incorporating these elements |
US8368992B2 (en) * | 2006-03-03 | 2013-02-05 | Gentex Corporation | Electro-optical element including IMI coatings |
US7688495B2 (en) * | 2006-03-03 | 2010-03-30 | Gentex Corporation | Thin-film coatings, electro-optic elements and assemblies incorporating these elements |
US8274729B2 (en) * | 2006-03-03 | 2012-09-25 | Gentex Corporation | Thin-film coatings, electro-optic elements and assemblies incorporating these elements |
US8169681B2 (en) | 2006-03-03 | 2012-05-01 | Gentex Corporation | Thin-film coatings, electro-optic elements and assemblies incorporating these elements |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US10017847B2 (en) | 2007-03-05 | 2018-07-10 | Gentex Corporation | Method and apparatus for ion milling |
US9274394B2 (en) | 2007-03-05 | 2016-03-01 | Gentex Corporation | Multi-zone mirrors |
US8035881B2 (en) * | 2007-03-05 | 2011-10-11 | Gentex Corporation | Multi-zone mirrors |
US8649083B2 (en) | 2007-03-05 | 2014-02-11 | Gentex Corporation | Multi-zone mirrors |
DE102007062050B4 (de) | 2007-09-28 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers |
US8154418B2 (en) | 2008-03-31 | 2012-04-10 | Magna Mirrors Of America, Inc. | Interior rearview mirror system |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
GB0818918D0 (en) * | 2008-10-15 | 2008-11-19 | Icera Inc | Boot algorithm |
JP5748949B2 (ja) * | 2008-11-20 | 2015-07-15 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
CN107895746B (zh) * | 2017-12-05 | 2019-09-13 | 青岛海信宽带多媒体技术有限公司 | 含铝多量子阱激光芯片及其制造方法、激光装置 |
DE102020130017A1 (de) * | 2020-11-13 | 2022-05-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
DE102021103484A1 (de) * | 2021-02-15 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751201A (en) * | 1987-03-04 | 1988-06-14 | Bell Communications Research, Inc. | Passivation of gallium arsenide devices with sodium sulfide |
US4843037A (en) * | 1987-08-21 | 1989-06-27 | Bell Communications Research, Inc. | Passivation of indium gallium arsenide surfaces |
US4871692A (en) * | 1988-09-30 | 1989-10-03 | Lee Hong H | Passivation of group III-V surfaces |
DE69033959T2 (de) * | 1989-02-03 | 2002-10-31 | Sharp Kk | Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung |
-
1990
- 1990-09-14 EP EP90810695A patent/EP0474952B1/de not_active Expired - Lifetime
- 1990-09-14 DE DE69009474T patent/DE69009474T2/de not_active Expired - Fee Related
-
1991
- 1991-05-30 US US07/707,557 patent/US5177031A/en not_active Expired - Lifetime
- 1991-06-18 JP JP3171988A patent/JPH0775266B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH06342961A (ja) | 1994-12-13 |
EP0474952A1 (de) | 1992-03-18 |
DE69009474T2 (de) | 1994-12-01 |
US5177031A (en) | 1993-01-05 |
JPH0775266B2 (ja) | 1995-08-09 |
EP0474952B1 (de) | 1994-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |