DE68909779D1 - Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten. - Google Patents

Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten.

Info

Publication number
DE68909779D1
DE68909779D1 DE89810463T DE68909779T DE68909779D1 DE 68909779 D1 DE68909779 D1 DE 68909779D1 DE 89810463 T DE89810463 T DE 89810463T DE 68909779 T DE68909779 T DE 68909779T DE 68909779 D1 DE68909779 D1 DE 68909779D1
Authority
DE
Germany
Prior art keywords
flatness
improving
mirror facets
etched mirror
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89810463T
Other languages
English (en)
Other versions
DE68909779T2 (de
Inventor
Peter Leo Dr Buchmann
Peter Vettiger
Otto Dr Voegeli
David John Dr Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE68909779D1 publication Critical patent/DE68909779D1/de
Publication of DE68909779T2 publication Critical patent/DE68909779T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
DE89810463T 1989-06-16 1989-06-16 Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten. Expired - Lifetime DE68909779T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89810463A EP0402556B1 (de) 1989-06-16 1989-06-16 Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten

Publications (2)

Publication Number Publication Date
DE68909779D1 true DE68909779D1 (de) 1993-11-11
DE68909779T2 DE68909779T2 (de) 1994-05-05

Family

ID=8203159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89810463T Expired - Lifetime DE68909779T2 (de) 1989-06-16 1989-06-16 Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten.

Country Status (5)

Country Link
US (2) US5032219A (de)
EP (1) EP0402556B1 (de)
JP (1) JPH07105573B2 (de)
CA (1) CA2017303C (de)
DE (1) DE68909779T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112058T2 (de) * 1991-09-19 1996-05-02 Ibm Selbstjustierender optischer Wellenleiter-Laser, Struktur und dessen Herstellungsverfahren.
JPH05173046A (ja) * 1991-12-20 1993-07-13 Sony Corp 光導波路装置
FR2694099B1 (fr) * 1992-07-21 1994-12-09 Louis Menigaux Procédé pour former une structure à guide de lumière et miroir intégrés, et structure ainsi réalisée.
US5379359A (en) * 1992-09-29 1995-01-03 Eastman Kodak Company Laser diode coupling to waveguide and method of making same using substrate etching
KR0138006B1 (ko) * 1992-10-26 1998-06-15 모리시타 요이찌 광도파로 및 그 제조방법
US6090635A (en) * 1992-11-17 2000-07-18 Gte Laboratories Incorporated Method for forming a semiconductor device structure having a laser portion
DE69228422T2 (de) * 1992-11-24 1999-09-30 Ibm Optischer Isolator für Wellenleiter
US5311539A (en) * 1992-11-25 1994-05-10 International Business Machines Corporation Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
DE69316552T2 (de) * 1992-11-26 1998-06-04 Nederland Ptt Herstellungsmethode für scharfe faseroptische Verzweigungen in integrierten optischen Komponenten
US5320981A (en) * 1993-08-10 1994-06-14 Micron Semiconductor, Inc. High accuracy via formation for semiconductor devices
US6204189B1 (en) 1999-01-29 2001-03-20 The Regents Of The University Of California Fabrication of precision high quality facets on molecular beam epitaxy material
US6304587B1 (en) 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US6596557B1 (en) * 2000-03-02 2003-07-22 Orchid Lightwave Communications, Inc. Integrated optical devices and methods of making such devices
KR100908623B1 (ko) * 2001-10-30 2009-07-21 호야 코포레이션 유에스에이 광출력의 횡단 전달을 이용하는 광학적 접합 장치 및 방법
JP3666463B2 (ja) * 2002-03-13 2005-06-29 日本電気株式会社 光導波路デバイスおよび光導波路デバイスの製造方法
US6985646B2 (en) 2003-01-24 2006-01-10 Xponent Photonics Inc Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
EP1680843A4 (de) * 2003-10-20 2009-05-06 Binoptics Corp Photonische einrichtung mit oberflächenemission und empfang
US7481545B2 (en) * 2005-10-13 2009-01-27 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method of forming and mounting an angled reflector
US7496120B2 (en) * 2005-10-14 2009-02-24 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Compact laser output monitoring using reflection and diffraction
WO2007048110A2 (en) * 2005-10-19 2007-04-26 University Of Notre Dame Du Lac High-index-contrast waveguide
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
US7995892B2 (en) * 2007-06-01 2011-08-09 Lawrence Livermore National Security, Llc Low loss, high and low index contrast waveguides in semiconductors
US7889993B2 (en) * 2007-08-17 2011-02-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Optical transceiver module having a front facet reflector and methods for making and using a front facet reflector
US8982921B2 (en) * 2013-02-07 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor lasers and etched-facet integrated devices having H-shaped windows
US9214786B2 (en) 2013-04-09 2015-12-15 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
WO2016197137A1 (en) 2015-06-04 2016-12-08 Nlight, Inc. Angled dbr-grating laser/amplifier with one or more mode-hopping regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095826B1 (de) * 1982-05-28 1988-06-01 Sharp Kabushiki Kaisha Halbleiterlaser
JPS58225681A (ja) * 1982-06-23 1983-12-27 Sharp Corp 半導体レ−ザ素子
US4725112A (en) * 1985-08-06 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide
US4773720A (en) * 1986-06-03 1988-09-27 General Electric Company Optical waveguide
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
US4886538A (en) * 1987-07-28 1989-12-12 Polaroid Corporation Process for tapering waveguides
NL8800939A (nl) * 1988-04-12 1989-11-01 Philips Nv Stralingskoppelinrichting.

Also Published As

Publication number Publication date
EP0402556B1 (de) 1993-10-06
CA2017303A1 (en) 1990-12-16
US5032219A (en) 1991-07-16
US5103493A (en) 1992-04-07
DE68909779T2 (de) 1994-05-05
JPH0330490A (ja) 1991-02-08
JPH07105573B2 (ja) 1995-11-13
EP0402556A1 (de) 1990-12-19
CA2017303C (en) 1995-12-12

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