DE69008770D1 - Magnetische Materialien für Festkörpervorrichtungen. - Google Patents

Magnetische Materialien für Festkörpervorrichtungen.

Info

Publication number
DE69008770D1
DE69008770D1 DE69008770T DE69008770T DE69008770D1 DE 69008770 D1 DE69008770 D1 DE 69008770D1 DE 69008770 T DE69008770 T DE 69008770T DE 69008770 T DE69008770 T DE 69008770T DE 69008770 D1 DE69008770 D1 DE 69008770D1
Authority
DE
Germany
Prior art keywords
solid state
magnetic materials
state devices
devices
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69008770T
Other languages
English (en)
Other versions
DE69008770T2 (de
Inventor
Leroy L Chang
Leo Esaki
Hiro Munekata
Hideo Ohno
Molnar Stephan Von
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69008770D1 publication Critical patent/DE69008770D1/de
Application granted granted Critical
Publication of DE69008770T2 publication Critical patent/DE69008770T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Hard Magnetic Materials (AREA)
DE69008770T 1989-05-31 1990-01-11 Magnetische Materialien für Festkörpervorrichtungen. Expired - Fee Related DE69008770T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35929489A 1989-05-31 1989-05-31

Publications (2)

Publication Number Publication Date
DE69008770D1 true DE69008770D1 (de) 1994-06-16
DE69008770T2 DE69008770T2 (de) 1994-11-24

Family

ID=23413205

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69008770T Expired - Fee Related DE69008770T2 (de) 1989-05-31 1990-01-11 Magnetische Materialien für Festkörpervorrichtungen.

Country Status (4)

Country Link
US (1) US5294287A (de)
EP (1) EP0400263B1 (de)
JP (1) JPH0311703A (de)
DE (1) DE69008770T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191223A (en) * 1991-07-03 1993-03-02 International Business Machines Corporation Device for selective magnetization and method
US6153318A (en) 1996-04-30 2000-11-28 Rothberg; Gerald M. Layered material having properties that are variable by an applied electric field
FR2753567B1 (fr) * 1996-09-19 1998-11-13 Alsthom Cge Alcatel Procede de depot d'un film ferromagnetique sur un guide d'onde, et un composant magneto-optique comprenant un film mince ferromagnetique depose selon le procede
JP3537086B2 (ja) * 2000-09-08 2004-06-14 独立行政法人産業技術総合研究所 スピンエレクトロニクス材料およびその作製方法
US6355561B1 (en) * 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
CN100466322C (zh) * 2001-01-19 2009-03-04 松下电器产业株式会社 磁存储元件、其制造方法和驱动方法、及存储器阵列
EP1367151A1 (de) * 2001-03-02 2003-12-03 Japan Science and Technology Corporation Einkristalline ferromagnetische verbindung auf gruppe-ii-vi- oder gruppe-iii-v-basis und verfahren zur einstellung ihrer ferromagnetischen eigenschaften
US7060131B2 (en) * 2001-05-09 2006-06-13 Hrl Laboratories, Llc Epitaxy with compliant layers of group-V species
JP4622179B2 (ja) * 2001-07-16 2011-02-02 日立金属株式会社 磁気冷凍作業物質および蓄冷式熱交換器ならびに磁気冷凍装置
NL1018668C2 (nl) * 2001-07-31 2003-02-03 Stichting Tech Wetenschapp Materiaal geschikt voor magnetische koeling, werkwijze voor het bereiden ervan en toepassing van het materiaal.
US6955858B2 (en) * 2001-12-07 2005-10-18 North Carolina State University Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
US20060108619A1 (en) * 2002-06-07 2006-05-25 Japan Science And Technoogy Agency Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics
US20040168751A1 (en) * 2002-06-27 2004-09-02 Wu Ming H. Beta titanium compositions and methods of manufacture thereof
KR100492482B1 (ko) * 2002-09-04 2005-06-03 한국과학기술연구원 Ｐｅｍｂｅ로 제조된 상온 자성반도체 및 그 소자
DE10325757A1 (de) * 2003-06-05 2005-01-20 Universität Ulm Verfahren zur Herstellung von magnetischen Halbleitern mit günstigen ferromagnetischen Eigenschaften
US8331140B2 (en) * 2004-01-15 2012-12-11 Japan Science And Technology Agency Current injection magnetic domain wall moving element
US7956608B1 (en) 2005-06-27 2011-06-07 Northwestern University Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
US20080012004A1 (en) * 2006-03-17 2008-01-17 Mears Technologies, Inc. Spintronic devices with constrained spintronic dopant
US7625767B2 (en) 2006-03-17 2009-12-01 Mears Technologies, Inc. Methods of making spintronic devices with constrained spintronic dopant
CN102080257A (zh) * 2010-11-30 2011-06-01 无锡南理工科技发展有限公司 一种高Mn含量(In，Mn)As纳米点的制备方法
JP2018206884A (ja) * 2017-06-01 2018-12-27 国立大学法人東京工業大学 強磁性半導体、その製造方法およびそれを用いた磁気センサ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238987B (de) * 1961-08-10 1967-04-20 Siemens Ag Halbleiterkoerper fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften
FR1335282A (fr) * 1961-08-30 1963-08-16 Gen Electric Composés semi-conducteurs, procédés de préparation et de dépôt de ceux-ci, et dispositifs semi-conducteurs ainsi obtenus
JPS4989897A (de) * 1972-12-29 1974-08-28
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4411728A (en) * 1981-03-30 1983-10-25 Agency Of Industrial Science & Technology Method for manufacture of interdigital periodic structure device
JPH0192359A (ja) * 1981-08-11 1989-04-11 Hitachi Ltd 非晶質薄膜の製造方法
JPH0744107B2 (ja) * 1985-10-16 1995-05-15 ソニー株式会社 軟磁性薄膜
DE3608903A1 (de) * 1986-03-17 1987-09-24 Wacker Chemitronic Verfahren zur grunddotierung von galliumarsenid, insbesondere mit silicium, beim bootziehen
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
JP2790451B2 (ja) * 1987-04-10 1998-08-27 松下電器産業株式会社 窒素を含む軟磁性合金膜
JPS6442040A (en) * 1987-08-07 1989-02-14 Toshiba Corp Information recording medium
GB8810125D0 (en) * 1988-04-28 1988-06-02 Secr Defence Ferromagnetic materials
US4823177A (en) * 1988-06-30 1989-04-18 United States Of America As Represented By The Secretary Of The Navy Method and device for magnetizing thin films by the use of injected spin polarized current
JPH0649633B2 (ja) * 1990-01-19 1994-06-29 新技術事業団 化合物結晶のエピタキシャル成長におけるドーピング方法

Also Published As

Publication number Publication date
JPH0311703A (ja) 1991-01-21
DE69008770T2 (de) 1994-11-24
EP0400263B1 (de) 1994-05-11
EP0400263A1 (de) 1990-12-05
US5294287A (en) 1994-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee