DE68928096D1 - Integrierter Halbleiterschaltkreis - Google Patents

Integrierter Halbleiterschaltkreis

Info

Publication number
DE68928096D1
DE68928096D1 DE68928096T DE68928096T DE68928096D1 DE 68928096 D1 DE68928096 D1 DE 68928096D1 DE 68928096 T DE68928096 T DE 68928096T DE 68928096 T DE68928096 T DE 68928096T DE 68928096 D1 DE68928096 D1 DE 68928096D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928096T
Other languages
English (en)
Other versions
DE68928096T2 (de
Inventor
Shigeharu Intellectual Nakata
Kazumasa Intellectual Pr Andoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68928096D1 publication Critical patent/DE68928096D1/de
Publication of DE68928096T2 publication Critical patent/DE68928096T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE68928096T 1988-12-28 1989-12-28 Integrierter Halbleiterschaltkreis Expired - Fee Related DE68928096T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63333615A JP2901188B2 (ja) 1988-12-28 1988-12-28 半導体集積回路

Publications (2)

Publication Number Publication Date
DE68928096D1 true DE68928096D1 (de) 1997-07-10
DE68928096T2 DE68928096T2 (de) 1997-10-16

Family

ID=18268032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928096T Expired - Fee Related DE68928096T2 (de) 1988-12-28 1989-12-28 Integrierter Halbleiterschaltkreis

Country Status (4)

Country Link
EP (1) EP0376291B1 (de)
JP (1) JP2901188B2 (de)
KR (1) KR930007183B1 (de)
DE (1) DE68928096T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940006676B1 (ko) * 1991-10-14 1994-07-25 삼성전자 주식회사 시험회로를 내장한 기억용 반도체 집적회로

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
JPS6120349A (ja) * 1984-07-06 1986-01-29 Hitachi Ltd Lsi集合体
JPS63126263A (ja) * 1986-11-17 1988-05-30 Hitachi Ltd 半導体集積回路装置
JPS63229511A (ja) * 1987-03-19 1988-09-26 Matsushita Electric Ind Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
DE68928096T2 (de) 1997-10-16
EP0376291A2 (de) 1990-07-04
KR900010782A (ko) 1990-07-09
JPH03209757A (ja) 1991-09-12
KR930007183B1 (ko) 1993-07-31
JP2901188B2 (ja) 1999-06-07
EP0376291B1 (de) 1997-06-04
EP0376291A3 (de) 1991-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee