DE68926448T2 - Bildsensor und verfahren zu dessen herstellung - Google Patents

Bildsensor und verfahren zu dessen herstellung

Info

Publication number
DE68926448T2
DE68926448T2 DE68926448T DE68926448T DE68926448T2 DE 68926448 T2 DE68926448 T2 DE 68926448T2 DE 68926448 T DE68926448 T DE 68926448T DE 68926448 T DE68926448 T DE 68926448T DE 68926448 T2 DE68926448 T2 DE 68926448T2
Authority
DE
Germany
Prior art keywords
production
image sensor
sensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926448T
Other languages
English (en)
Other versions
DE68926448D1 (de
Inventor
Tetsuro - Nakamura
Takahiko Murata
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63259777A external-priority patent/JPH02105774A/ja
Priority claimed from JP63259711A external-priority patent/JPH02107053A/ja
Priority claimed from JP1085434A external-priority patent/JPH0738436B2/ja
Priority claimed from JP1085437A external-priority patent/JPH02263481A/ja
Priority claimed from JP1095709A external-priority patent/JPH02272764A/ja
Priority claimed from JP1130841A external-priority patent/JPH02309643A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE68926448D1 publication Critical patent/DE68926448D1/de
Publication of DE68926448T2 publication Critical patent/DE68926448T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
    • H04N1/0311—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using an array of elements to project the scanned image elements onto the photodetectors
    • H04N1/0312—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using an array of elements to project the scanned image elements onto the photodetectors using an array of optical fibres or rod-lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
    • H04N1/0311—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using an array of elements to project the scanned image elements onto the photodetectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
    • H04N1/0315—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using photodetectors and illumination means mounted on separate supports or substrates or mounted in different planes
    • H04N1/0316—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using photodetectors and illumination means mounted on separate supports or substrates or mounted in different planes illuminating the scanned image elements through the plane of the photodetector, e.g. back-light illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
DE68926448T 1988-10-14 1989-10-13 Bildsensor und verfahren zu dessen herstellung Expired - Fee Related DE68926448T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP63259777A JPH02105774A (ja) 1988-10-14 1988-10-14 光学的原稿読取装置
JP63259711A JPH02107053A (ja) 1988-10-15 1988-10-15 光学的原稿読取り装置
JP1085434A JPH0738436B2 (ja) 1989-04-04 1989-04-04 半導体実装方法
JP1085437A JPH02263481A (ja) 1989-04-04 1989-04-04 半導体装置およびそれを用いたイメージセンサ
JP1095709A JPH02272764A (ja) 1989-04-14 1989-04-14 半導体装置
JP1130841A JPH02309643A (ja) 1989-05-24 1989-05-24 半導体装置
PCT/JP1989/001059 WO1990004263A1 (en) 1988-10-14 1989-10-13 Image sensor and method of producing the same

Publications (2)

Publication Number Publication Date
DE68926448D1 DE68926448D1 (de) 1996-06-13
DE68926448T2 true DE68926448T2 (de) 1996-12-12

Family

ID=27551654

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926448T Expired - Fee Related DE68926448T2 (de) 1988-10-14 1989-10-13 Bildsensor und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (2) US5065006A (de)
EP (1) EP0393206B1 (de)
DE (1) DE68926448T2 (de)
WO (1) WO1990004263A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160352A (ja) * 1986-12-24 1988-07-04 Semiconductor Energy Lab Co Ltd 半導体装置の実装方法
DE69321745T2 (de) * 1992-02-04 1999-10-07 Matsushita Electric Ind Co Ltd Direktkontakt-Bildsensor und Herstellungsverfahren dafür
EP0591862B1 (de) * 1992-10-02 1999-05-26 Matsushita Electric Industrial Co., Ltd. Halbleitervorrichtung, Bildabtastvorrichtung und Verfahren zu ihrer Herstellung
KR0137398B1 (ko) * 1992-10-23 1998-04-29 모리시타 요이찌 완전밀착형 이미지센서 및 유닛 그리고 그 제조방법
KR0137190B1 (ko) * 1992-12-03 1998-04-28 모리시타 요이찌 완전밀착형이미지센서 및 완전밀착형이미지센서유닛
US5275839A (en) * 1992-12-16 1994-01-04 Graseby Electro-Optics, Inc. Method of sensitizing lead salt detectors
JP3067435B2 (ja) * 1992-12-24 2000-07-17 キヤノン株式会社 画像読取用光電変換装置及び該装置を有する画像処理装置
US5394498A (en) * 1993-11-05 1995-02-28 At&T Corp. Optical fiber array and process of manufacture
KR970005706B1 (ko) * 1994-01-24 1997-04-19 금성일렉트론 주식회사 고체촬상소자 및 그 제조방법
JP2833996B2 (ja) * 1994-05-25 1998-12-09 日本電気株式会社 フレキシブルフィルム及びこれを有する半導体装置
US5766972A (en) * 1994-06-02 1998-06-16 Mitsubishi Denki Kabushiki Kaisha Method of making resin encapsulated semiconductor device with bump electrodes
US5532173A (en) * 1994-07-14 1996-07-02 The United States Of America As Represented By The Secretary Of The Air Force FET optical receiver using backside illumination, indium materials species
JP3235454B2 (ja) * 1996-03-29 2001-12-04 松下電器産業株式会社 電子部品の接合方法
DE19831570A1 (de) * 1998-07-14 2000-01-20 Siemens Ag Biometrischer Sensor und Verfahren zu dessen Herstellung
JP2001118967A (ja) * 1999-10-19 2001-04-27 Sanyo Electric Co Ltd 固体撮像素子のパッケージ構造
JP2001203913A (ja) * 2000-01-21 2001-07-27 Sony Corp 撮像装置、カメラモジュール及びカメラシステム
US6512219B1 (en) * 2000-01-25 2003-01-28 Amkor Technology, Inc. Fabrication method for integrally connected image sensor packages having a window support in contact with the window and active area
US6515269B1 (en) * 2000-01-25 2003-02-04 Amkor Technology, Inc. Integrally connected image sensor packages having a window support in contact with a window and the active area
US6503780B1 (en) 2000-07-05 2003-01-07 Amkor Technology, Inc. Wafer scale image sensor package fabrication method
JP2002076313A (ja) * 2000-08-28 2002-03-15 Canon Inc 固体撮像装置
US6528857B1 (en) 2000-11-13 2003-03-04 Amkor Technology, Inc. Chip size image sensor bumped package
US6620646B1 (en) * 2000-11-13 2003-09-16 Amkor Technology, Inc. Chip size image sensor wirebond package fabrication method
US6629633B1 (en) 2000-11-13 2003-10-07 Amkor Technology, Inc. Chip size image sensor bumped package fabrication method
FR2819104B1 (fr) * 2000-12-29 2003-11-07 St Microelectronics Sa Boitier semi-conducteur optique a support transparent
US20040221951A1 (en) * 2001-07-26 2004-11-11 Ta-Ko Chuang Method for bonding an integrated circuit device to a glass substrate
FR2833410B1 (fr) * 2001-12-10 2004-03-19 Commissariat Energie Atomique Procede de realisation d'un dispositif d'imagerie
FR2835653B1 (fr) * 2002-02-06 2005-04-15 St Microelectronics Sa Dispositif semi-conducteur optique
US20050012027A1 (en) * 2003-07-16 2005-01-20 Jackson Hsieh Image sensor and method for packaging the same
EP1542272B1 (de) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
JP2006165517A (ja) * 2004-11-11 2006-06-22 Sharp Corp フレキシブル配線基板、それを用いた半導体装置および電子機器、並びにフレキシブル配線基板の製造方法
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子
US8369915B2 (en) * 2009-11-06 2013-02-05 Wisconsin Alumni Research Foundation Integrated miniaturized fiber optic probe
JP5644286B2 (ja) * 2010-09-07 2014-12-24 オムロン株式会社 電子部品の表面実装方法及び電子部品が実装された基板
JP2017175047A (ja) 2016-03-25 2017-09-28 ソニー株式会社 半導体装置、固体撮像素子、撮像装置、および電子機器

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046593B2 (ja) * 1980-01-18 1985-10-16 松下電器産業株式会社 固体撮像装置およびその製造方法
US4523102A (en) * 1980-03-17 1985-06-11 Matsushita Electric Industrial Co., Ltd. Solid-state color-image sensor and process for fabricating the same
US4388128A (en) * 1980-03-17 1983-06-14 Matsushita Electric Industrial Co., Ltd. Solid-state color-image sensor and process for fabricating the same
JPS56140680A (en) * 1980-04-04 1981-11-04 Hitachi Ltd Photosensor device
JPS58164256A (ja) * 1982-03-25 1983-09-29 Fujitsu Ltd 半導体集積回路装置
JPS58218164A (ja) * 1982-05-31 1983-12-19 Nec Home Electronics Ltd 厚膜印刷基板
US4667092A (en) * 1982-12-28 1987-05-19 Nec Corporation Solid-state image device with resin lens and resin contact layer
JPS60191548A (ja) * 1984-03-12 1985-09-30 Hitachi Ltd イメ−ジセンサ
KR900002808B1 (ko) * 1984-07-26 1990-04-30 가부시끼 가이샤 도시바 화상 판독 장치
JPS6189696A (ja) * 1984-10-09 1986-05-07 富士通株式会社 厚膜ペ−ストの焼成方法
WO1993013089A1 (en) * 1985-01-25 1993-07-08 Urban Frank J Macrocyclic polyether carboxylic acids
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
AU594359B2 (en) * 1985-08-24 1990-03-08 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
EP0228712B1 (de) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren
JPS62189883A (ja) * 1986-02-17 1987-08-19 Matsushita Electronics Corp 固体撮像装置
JPS62264659A (ja) * 1986-05-13 1987-11-17 Olympus Optical Co Ltd 固体撮像装置
JPS648668A (en) * 1987-06-30 1989-01-12 Sharp Kk Contact type image sensor
DE3869250D1 (de) * 1987-07-17 1992-04-23 Sharp Kk Bildsensor des kontakttyps.
JPH0193165A (ja) * 1987-10-02 1989-04-12 Ricoh Co Ltd 密着型イメージセンサ
JP2744273B2 (ja) * 1988-02-09 1998-04-28 キヤノン株式会社 光電変換装置の製造方法
JPH0250566A (ja) * 1988-08-11 1990-02-20 Ricoh Co Ltd 等倍光センサー
EP0389756B1 (de) * 1989-02-02 1994-06-01 Matsushita Electric Industrial Co., Ltd. Verfahren zum Zusammensetzen von Halbleiteranordnungen
US5071787A (en) * 1989-03-14 1991-12-10 Kabushiki Kaisha Toshiba Semiconductor device utilizing a face-down bonding and a method for manufacturing the same

Also Published As

Publication number Publication date
US5065006A (en) 1991-11-12
WO1990004263A1 (en) 1990-04-19
EP0393206A1 (de) 1990-10-24
EP0393206A4 (en) 1991-08-28
US5138145A (en) 1992-08-11
EP0393206B1 (de) 1996-05-08
DE68926448D1 (de) 1996-06-13

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