DE68926078D1 - Belichtungsverfahren für Halbleiteranordnungen und Lochmaske dafür - Google Patents

Belichtungsverfahren für Halbleiteranordnungen und Lochmaske dafür

Info

Publication number
DE68926078D1
DE68926078D1 DE68926078T DE68926078T DE68926078D1 DE 68926078 D1 DE68926078 D1 DE 68926078D1 DE 68926078 T DE68926078 T DE 68926078T DE 68926078 T DE68926078 T DE 68926078T DE 68926078 D1 DE68926078 D1 DE 68926078D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
shadow mask
exposure method
mask therefor
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926078T
Other languages
English (en)
Other versions
DE68926078T2 (de
Inventor
Yoshihisa Oae
Kiichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68926078D1 publication Critical patent/DE68926078D1/de
Publication of DE68926078T2 publication Critical patent/DE68926078T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
DE68926078T 1988-09-06 1989-09-05 Belichtungsverfahren für Halbleiteranordnungen und Lochmaske dafür Expired - Fee Related DE68926078T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63222981A JP2706099B2 (ja) 1988-09-06 1988-09-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE68926078D1 true DE68926078D1 (de) 1996-05-02
DE68926078T2 DE68926078T2 (de) 1996-08-08

Family

ID=16790927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926078T Expired - Fee Related DE68926078T2 (de) 1988-09-06 1989-09-05 Belichtungsverfahren für Halbleiteranordnungen und Lochmaske dafür

Country Status (3)

Country Link
EP (1) EP0358567B1 (de)
JP (1) JP2706099B2 (de)
DE (1) DE68926078T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2902506B2 (ja) * 1990-08-24 1999-06-07 キヤノン株式会社 半導体装置の製造方法及び半導体装置
JP3344485B2 (ja) * 1990-11-09 2002-11-11 富士通株式会社 半導体装置の製造方法
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam
JP3204143B2 (ja) * 1997-01-06 2001-09-04 日本電気株式会社 ディスクキャッシュの制御方法
JP3085454B2 (ja) * 1997-03-13 2000-09-11 日本電気株式会社 荷電粒子線露光方法
JP3730500B2 (ja) 2000-09-27 2006-01-05 株式会社東芝 パターンデータ形成装置、パターンデータ形成方法、電子部品の製造方法
US6579302B2 (en) 2001-03-06 2003-06-17 Cordis Corporation Total occlusion guidewire device
JP2007171451A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd 露光方法およびプラズマディスプレイパネル
JP6745712B2 (ja) 2016-11-30 2020-08-26 日東電工株式会社 配線回路基板およびその製造方法
CA3084506C (en) 2017-12-21 2022-10-04 W. L. Gore & Associates, Inc. Catheter-based occlusion removal systems and methods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394773A (en) * 1977-01-31 1978-08-19 Cho Lsi Gijutsu Kenkyu Kumiai Method of connecting graph in charged beam exposing device

Also Published As

Publication number Publication date
DE68926078T2 (de) 1996-08-08
EP0358567B1 (de) 1996-03-27
JP2706099B2 (ja) 1998-01-28
JPH0271509A (ja) 1990-03-12
EP0358567A2 (de) 1990-03-14
EP0358567A3 (de) 1991-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee