DE68923811D1 - Halbleiterspeicherredundanzsystem. - Google Patents

Halbleiterspeicherredundanzsystem.

Info

Publication number
DE68923811D1
DE68923811D1 DE68923811T DE68923811T DE68923811D1 DE 68923811 D1 DE68923811 D1 DE 68923811D1 DE 68923811 T DE68923811 T DE 68923811T DE 68923811 T DE68923811 T DE 68923811T DE 68923811 D1 DE68923811 D1 DE 68923811D1
Authority
DE
Germany
Prior art keywords
redundant
cells
wordline
memory
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68923811T
Other languages
English (en)
Other versions
DE68923811T2 (de
Inventor
John Atkinson Fifield
Howard Leo Kalter
Christopher Paul Miller
Steven William Tomashot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE68923811D1 publication Critical patent/DE68923811D1/de
Publication of DE68923811T2 publication Critical patent/DE68923811T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE68923811T 1988-04-01 1989-03-09 Halbleiterspeicherredundanzsystem. Expired - Lifetime DE68923811T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/175,883 US5022006A (en) 1988-04-01 1988-04-01 Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells

Publications (2)

Publication Number Publication Date
DE68923811D1 true DE68923811D1 (de) 1995-09-21
DE68923811T2 DE68923811T2 (de) 1996-04-18

Family

ID=22642051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923811T Expired - Lifetime DE68923811T2 (de) 1988-04-01 1989-03-09 Halbleiterspeicherredundanzsystem.

Country Status (4)

Country Link
US (1) US5022006A (de)
EP (1) EP0335149B1 (de)
JP (1) JPH0756758B2 (de)
DE (1) DE68923811T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5629907A (en) * 1991-06-18 1997-05-13 Dallas Semiconductor Corporation Low power timekeeping system
JP2734705B2 (ja) * 1989-12-25 1998-04-02 日本電気株式会社 半導体記憶装置
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
JPH0478097A (ja) * 1990-07-13 1992-03-12 Sony Corp メモリ装置
GB9023867D0 (en) * 1990-11-02 1990-12-12 Mv Ltd Improvements relating to a fault tolerant storage system
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
JPH04255998A (ja) * 1991-02-08 1992-09-10 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR950001837B1 (ko) * 1992-07-13 1995-03-03 삼성전자주식회사 퓨우즈 박스를 공유하는 로우 리던던시 회로
US6058052A (en) * 1997-08-21 2000-05-02 Cypress Semiconductor Corp. Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area
US6263400B1 (en) * 1997-08-21 2001-07-17 Altera Corporation Memory cells configurable as CAM or RAM in programmable logic devices
JP2000298997A (ja) * 1999-04-15 2000-10-24 Nec Corp 半導体メモリ装置、データ設定方法および装置、情報記憶媒体
DE19956069A1 (de) * 1999-11-22 2001-05-31 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen und Referenzzellen
US6292383B1 (en) * 2000-04-27 2001-09-18 Stmicroelectronics, Inc. Redundant memory cell for dynamic random access memories having twisted bit line architectures
JP4050690B2 (ja) * 2003-11-21 2008-02-20 株式会社東芝 半導体集積回路装置
KR100557712B1 (ko) * 2004-11-10 2006-03-07 삼성전자주식회사 반도체 메모리의 리페어 방법 및 장치
DE102004054968B4 (de) * 2004-11-13 2006-11-02 Infineon Technologies Ag Verfahren zum Reparieren und zum Betreiben eines Speicherbauelements
US7224626B2 (en) * 2005-04-18 2007-05-29 Infineon Technologies Ag Redundancy circuits for semiconductor memory
JP4952137B2 (ja) * 2006-08-17 2012-06-13 富士通セミコンダクター株式会社 半導体メモリおよびシステム

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563499A (en) * 1979-06-25 1981-01-14 Fujitsu Ltd Semiconductor memory device
JPS5928560Y2 (ja) * 1979-11-13 1984-08-17 富士通株式会社 冗長ビットを有する記憶装置
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
DE3101802A1 (de) * 1981-01-21 1982-08-19 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS58130495A (ja) * 1982-01-29 1983-08-03 Toshiba Corp 半導体記憶装置
JPS59203299A (ja) * 1983-05-06 1984-11-17 Nec Corp 冗長ビット付メモリ
JPS6031038A (ja) * 1983-07-29 1985-02-16 Shimadzu Corp 構造物試験機
JPH0666394B2 (ja) * 1983-12-16 1994-08-24 富士通株式会社 半導体記憶装置
JPS60145600A (ja) * 1984-01-09 1985-08-01 Nec Corp 冗長ビツトを備えた半導体メモリ
ATE42647T1 (de) * 1984-08-02 1989-05-15 Siemens Ag Integrierter schreib-lesespeicher.
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JP2577724B2 (ja) * 1986-07-31 1997-02-05 三菱電機株式会社 半導体記憶装置

Also Published As

Publication number Publication date
EP0335149A3 (de) 1991-03-20
DE68923811T2 (de) 1996-04-18
EP0335149A2 (de) 1989-10-04
EP0335149B1 (de) 1995-08-16
JPH0212699A (ja) 1990-01-17
JPH0756758B2 (ja) 1995-06-14
US5022006A (en) 1991-06-04

Similar Documents

Publication Publication Date Title
DE68923811D1 (de) Halbleiterspeicherredundanzsystem.
EP0847010B1 (de) Blockarchitektur mit Zeilenredundanz
DE69023181D1 (de) Halbleiterspeichergerät mit Redundanz.
US6418066B1 (en) Semiconductor memory device having multibit data bus and redundant circuit configuration with reduced chip area
ITMI922474A1 (it) Circuito di ridonanza di colonna per un dispositivo di memoria a semiconduttore.
KR930001231A (ko) 반도체 기억 장치의 컬럼 선택 회로
FR2688328B1 (fr) Circuit a redondance de rangees pour dispositif a memoire a semi-conducteurs pour reparer ou remplacer une cellule defectueuse d'un reseau de cellules a memoire.
FR2647583B1 (fr) Dispositif de memoire a semiconducteurs avec bloc redondant
EP0284102A3 (de) Halbleiterspeichergerät mit verbessertem Redundanzschema
DE69330731D1 (de) Redundanzschaltung für Halbleiterspeichergeräte
EP0472209B1 (de) Halbleiterspeichergerät mit Redundanzschaltung
KR100276197B1 (ko) 로직 혼재 메모리
KR0184920B1 (ko) 반도체 메모리 장치
US5910927A (en) Memory device and sense amplifier control device
JP3228319B2 (ja) 半導体装置
KR19990013942A (ko) 결함 허용 메모리 소자 제조 방법
US5475647A (en) Flash write circuit for a semiconductor memory device
US5889712A (en) Semiconductor memory device
JPH1173792A (ja) 半導体記憶装置
US5384726A (en) Semiconductor memory device having a capability for controlled activation of sense amplifiers
JP2003242775A (ja) 階層バンキング制御を有するメモリ構造
EP0344632B1 (de) Halbleiterspeicheranordnung mit einem Pseudozeilendekodierer
JP2848451B2 (ja) 半導体メモリ
KR0172352B1 (ko) 반도체 메모리 장치의 컬럼 리던던시 제어회로
EP0632461B1 (de) Speicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete renunciation