DE68915625D1 - Halbleiterspeicher mit verbesserten Abfühlverstärkern. - Google Patents

Halbleiterspeicher mit verbesserten Abfühlverstärkern.

Info

Publication number
DE68915625D1
DE68915625D1 DE68915625T DE68915625T DE68915625D1 DE 68915625 D1 DE68915625 D1 DE 68915625D1 DE 68915625 T DE68915625 T DE 68915625T DE 68915625 T DE68915625 T DE 68915625T DE 68915625 D1 DE68915625 D1 DE 68915625D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
sense amplifiers
improved sense
improved
amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915625T
Other languages
English (en)
Other versions
DE68915625T2 (de
Inventor
Yoshio C O Intellectual Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68915625D1 publication Critical patent/DE68915625D1/de
Publication of DE68915625T2 publication Critical patent/DE68915625T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE68915625T 1988-07-11 1989-07-11 Halbleiterspeicher mit verbesserten Abfühlverstärkern. Expired - Fee Related DE68915625T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17231588 1988-07-11

Publications (2)

Publication Number Publication Date
DE68915625D1 true DE68915625D1 (de) 1994-07-07
DE68915625T2 DE68915625T2 (de) 1994-10-20

Family

ID=15939637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915625T Expired - Fee Related DE68915625T2 (de) 1988-07-11 1989-07-11 Halbleiterspeicher mit verbesserten Abfühlverstärkern.

Country Status (5)

Country Link
US (1) US5023842A (de)
EP (1) EP0350860B1 (de)
JP (1) JPH02126495A (de)
KR (1) KR930003250B1 (de)
DE (1) DE68915625T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3101297B2 (ja) * 1990-03-30 2000-10-23 株式会社東芝 半導体メモリ装置
TW212852B (de) * 1990-09-20 1993-09-11 Siemens Ag
JP3028913B2 (ja) * 1994-11-10 2000-04-04 株式会社東芝 半導体記憶装置
DE19735137C1 (de) * 1997-08-13 1998-10-01 Siemens Ag Schaltungsvorrichtung für die Bewertung des Dateninhalts von Speicherzellen
KR101593153B1 (ko) 2013-12-18 2016-02-12 소리텔레콤(주) 모의 총기용 적외선 발사유닛

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof
JPS59915B2 (ja) * 1979-11-29 1984-01-09 富士通株式会社 メモリ回路
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS61104395A (ja) * 1984-10-22 1986-05-22 Nec Ic Microcomput Syst Ltd ダイナミック型半導体記憶装置
US4687951A (en) * 1984-10-29 1987-08-18 Texas Instruments Incorporated Fuse link for varying chip operating parameters
JPS629590A (ja) * 1985-07-08 1987-01-17 Nec Corp 増幅回路
JPS62195787A (ja) * 1986-02-24 1987-08-28 Toshiba Corp 半導体記憶装置
JPS62259294A (ja) * 1986-05-06 1987-11-11 Toshiba Corp 半導体記憶装置
JPS6386188A (ja) * 1986-09-30 1988-04-16 Toshiba Corp ダイナミツク型半導体記憶装置
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory
JPS63161588A (ja) * 1986-12-24 1988-07-05 Nec Corp ダイナミツク型センスアンプ用ラツチ信号発生回路

Also Published As

Publication number Publication date
DE68915625T2 (de) 1994-10-20
EP0350860A3 (de) 1991-11-13
JPH02126495A (ja) 1990-05-15
KR930003250B1 (ko) 1993-04-24
EP0350860B1 (de) 1994-06-01
KR900002309A (ko) 1990-02-28
EP0350860A2 (de) 1990-01-17
US5023842A (en) 1991-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee