DE68908919T2 - Halbleiterlaser mit verteilter Rückkoppelung und Strominjektions-Verfahren dafür. - Google Patents

Halbleiterlaser mit verteilter Rückkoppelung und Strominjektions-Verfahren dafür.

Info

Publication number
DE68908919T2
DE68908919T2 DE89302371T DE68908919T DE68908919T2 DE 68908919 T2 DE68908919 T2 DE 68908919T2 DE 89302371 T DE89302371 T DE 89302371T DE 68908919 T DE68908919 T DE 68908919T DE 68908919 T2 DE68908919 T2 DE 68908919T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
injection process
current injection
distributed feedback
process therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89302371T
Other languages
English (en)
Other versions
DE68908919D1 (de
Inventor
Masashi Usami
Shigeyuki Akiba
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Publication of DE68908919D1 publication Critical patent/DE68908919D1/de
Application granted granted Critical
Publication of DE68908919T2 publication Critical patent/DE68908919T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06832—Stabilising during amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE89302371T 1988-03-11 1989-03-10 Halbleiterlaser mit verteilter Rückkoppelung und Strominjektions-Verfahren dafür. Expired - Fee Related DE68908919T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63056246A JP2533355B2 (ja) 1988-03-11 1988-03-11 分布帰還形半導体レ―ザ装置およびその電流注入方法

Publications (2)

Publication Number Publication Date
DE68908919D1 DE68908919D1 (de) 1993-10-14
DE68908919T2 true DE68908919T2 (de) 1994-01-05

Family

ID=13021734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89302371T Expired - Fee Related DE68908919T2 (de) 1988-03-11 1989-03-10 Halbleiterlaser mit verteilter Rückkoppelung und Strominjektions-Verfahren dafür.

Country Status (4)

Country Link
US (1) US4932034A (de)
EP (1) EP0332453B1 (de)
JP (1) JP2533355B2 (de)
DE (1) DE68908919T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69033405T2 (de) * 1989-07-15 2000-07-20 Fujitsu Ltd Abstimmbare Laserdiode mit verteilter Rückkoppelung
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
US5012484A (en) * 1990-01-02 1991-04-30 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system
JP2702813B2 (ja) * 1990-01-02 1998-01-26 エイ・ティ・アンド・ティ・コーポレーション 半導体レーザ及びそれを用いた光ファイバ通信システム
JP2751558B2 (ja) * 1990-04-13 1998-05-18 日本電気株式会社 集積型光半導体装置およびその駆動方法
JPH04206583A (ja) * 1990-11-30 1992-07-28 Fujitsu Ltd 波長可変レーザの駆動装置
FR2673342B1 (fr) * 1991-02-27 1994-04-08 Alcatel Alsthom Cie Gle Electric Dispositif a retroaction positive pour le traitement d'un signal optique.
JP3123670B2 (ja) * 1991-11-11 2001-01-15 キヤノン株式会社 半導体光増幅素子およびその使用法
US5206877A (en) * 1992-02-18 1993-04-27 Eastman Kodak Company Distributed feedback laser diodes with selectively placed lossy sections
DE4310578C2 (de) * 1992-03-31 1997-11-20 Toshiba Kawasaki Kk Wellenlängenabstimmbarer Halbleiterlaser
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
JP2725569B2 (ja) * 1992-11-18 1998-03-11 松下電器産業株式会社 レーザ発振器
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
DE4301830A1 (de) * 1993-01-23 1994-07-28 Ant Nachrichtentech 3-Sektions-DFB-Halbleiterlaser mit erweitertem Wellenlängen-Durchstimmungsbereich
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
JP2770714B2 (ja) * 1993-09-10 1998-07-02 日本電気株式会社 分布帰還型半導体レーザおよびその電流注入方法
US5502741A (en) * 1994-03-22 1996-03-26 Northern Telecom Limited Direct amplitude modulation of lasers
JPH08172237A (ja) * 1994-12-17 1996-07-02 Canon Inc 半導体レーザ、その変調方式およびそれを用いた光通信システム
AU4499797A (en) * 1996-09-13 1998-04-02 Kol Ohr Corporation Low cost means of modulating a laser
US6653662B2 (en) * 2000-11-01 2003-11-25 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
SE522802C2 (sv) 2000-12-13 2004-03-09 Ericsson Telefon Ab L M Elektrooptisk anordning med fördelad återkoppling för likformig förstärkning i vågledarens längdriktning
WO2002075867A2 (en) * 2001-03-19 2002-09-26 Bookham Technology Tuneable laser
KR100429531B1 (ko) * 2001-10-12 2004-05-03 삼성전자주식회사 분포귀환형 반도체 레이저
EP1396913A1 (de) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Einzelmodelaser mit verteilter Rückkopplung
JP4701086B2 (ja) * 2003-12-22 2011-06-15 パナソニック株式会社 半導体レーザ装置およびレーザ投射装置
US7366220B2 (en) * 2005-03-17 2008-04-29 Fujitsu Limited Tunable laser
US7567603B2 (en) * 2006-09-20 2009-07-28 Jds Uniphase Corporation Semiconductor laser diode with advanced window structure
JP5418359B2 (ja) * 2010-03-26 2014-02-19 沖電気工業株式会社 分布帰還型半導体レーザ
CN113169521A (zh) * 2018-11-19 2021-07-23 三菱电机株式会社 光半导体装置以及光半导体装置的制造方法
CN112928598B (zh) * 2021-01-20 2022-04-01 华中科技大学 一种反馈式半导体激光器的调控装置
US20230088485A1 (en) * 2021-09-23 2023-03-23 Freedom Photonics Llc Segmented contact for current control in semiconductor lasers and optical amplifiers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1543405A (en) * 1975-03-29 1979-04-04 Licentia Gmbh Method of and arrangement for producing coherent mode radiation
JPS5878488A (ja) * 1981-11-05 1983-05-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レーザの駆動方法
JPS59117284A (ja) * 1982-12-24 1984-07-06 Nec Corp 光増幅回路
JPS6165489A (ja) * 1984-09-07 1986-04-04 Nec Corp 半導体レ−ザ波長安定化装置
EP0205139B1 (de) * 1985-06-10 1992-09-23 Nec Corporation Halbleiterlaservorrichtung mit verteilter Rückkopplung
JPH0642577B2 (ja) * 1985-06-19 1994-06-01 日本電信電話株式会社 多電極分布帰還型半導体レーザの駆動方法
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.

Also Published As

Publication number Publication date
JPH01231388A (ja) 1989-09-14
EP0332453A3 (en) 1989-11-29
EP0332453A2 (de) 1989-09-13
DE68908919D1 (de) 1993-10-14
EP0332453B1 (de) 1993-09-08
JP2533355B2 (ja) 1996-09-11
US4932034A (en) 1990-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee