DE68904314D1 - Verfahren fuer die herstellung eines gesinterten hartmetalles mit einer diamantschicht. - Google Patents

Verfahren fuer die herstellung eines gesinterten hartmetalles mit einer diamantschicht.

Info

Publication number
DE68904314D1
DE68904314D1 DE8989101927T DE68904314T DE68904314D1 DE 68904314 D1 DE68904314 D1 DE 68904314D1 DE 8989101927 T DE8989101927 T DE 8989101927T DE 68904314 T DE68904314 T DE 68904314T DE 68904314 D1 DE68904314 D1 DE 68904314D1
Authority
DE
Germany
Prior art keywords
production
hard metal
diamond layer
sintered hard
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989101927T
Other languages
English (en)
Other versions
DE68904314T2 (de
Inventor
Toshimichi Ito
Satoshi Katsumata
Masakazu Watanabe
Satoshi Iio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
Idemitsu Petrochemical Co Ltd
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63024832A external-priority patent/JP2584467B2/ja
Priority claimed from JP63104970A external-priority patent/JP2543132B2/ja
Application filed by Idemitsu Petrochemical Co Ltd, NGK Spark Plug Co Ltd filed Critical Idemitsu Petrochemical Co Ltd
Publication of DE68904314D1 publication Critical patent/DE68904314D1/de
Application granted granted Critical
Publication of DE68904314T2 publication Critical patent/DE68904314T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
DE8989101927T 1988-02-04 1989-02-03 Verfahren fuer die herstellung eines gesinterten hartmetalles mit einer diamantschicht. Expired - Fee Related DE68904314T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63024832A JP2584467B2 (ja) 1988-02-04 1988-02-04 ダイヤモンド膜付超硬合金の製造方法
JP63104970A JP2543132B2 (ja) 1988-04-26 1988-04-26 ダイヤモンド薄膜付き超硬合金およびその製造方法

Publications (2)

Publication Number Publication Date
DE68904314D1 true DE68904314D1 (de) 1993-02-25
DE68904314T2 DE68904314T2 (de) 1993-08-05

Family

ID=26362401

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989101927T Expired - Fee Related DE68904314T2 (de) 1988-02-04 1989-02-03 Verfahren fuer die herstellung eines gesinterten hartmetalles mit einer diamantschicht.

Country Status (5)

Country Link
US (1) US5028451A (de)
EP (1) EP0327110B1 (de)
KR (1) KR920000801B1 (de)
CA (1) CA1336704C (de)
DE (1) DE68904314T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990403A (en) * 1989-01-20 1991-02-05 Idemitsu Petrochemical Company Limited Diamond coated sintered body
US5204167A (en) * 1989-02-23 1993-04-20 Toshiba Tungaloy Co., Ltd. Diamond-coated sintered body excellent in adhesion and process for preparing the same
JP2620976B2 (ja) * 1989-07-07 1997-06-18 株式会社豊田中央研究所 摺動部材
JP2848498B2 (ja) * 1989-11-25 1999-01-20 日本特殊陶業株式会社 ダイヤモンドの合成方法、ダイヤモンド被覆切削工具の製造方法、及びダイヤモンド被覆切削工具の製造方法
EP0721998B1 (de) * 1990-08-03 1999-01-13 Fujitsu Limited Verfahren zur Diamantabscheidung mittels CVD
US5492770A (en) * 1990-08-03 1996-02-20 Fujitsu Limited Method and apparatus for vapor deposition of diamond film
US5260106A (en) * 1990-08-03 1993-11-09 Fujitsu Limited Method for forming diamond films by plasma jet CVD
SE9003251D0 (sv) * 1990-10-11 1990-10-11 Diamant Boart Stratabit Sa Improved tools for rock drilling, metal cutting and wear part applications
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
JP2924989B2 (ja) * 1992-01-28 1999-07-26 日本特殊陶業株式会社 ダイヤモンド膜被覆窒化珪素基部材及びその製造方法
JP3057932B2 (ja) * 1992-10-01 2000-07-04 三菱マテリアル株式会社 セラミックス焼結体の接合方法
US5585176A (en) * 1993-11-30 1996-12-17 Kennametal Inc. Diamond coated tools and wear parts
US6087025A (en) * 1994-03-29 2000-07-11 Southwest Research Institute Application of diamond-like carbon coatings to cutting surfaces of metal cutting tools
US5593719A (en) * 1994-03-29 1997-01-14 Southwest Research Institute Treatments to reduce frictional wear between components made of ultra-high molecular weight polyethylene and metal alloys
US5731045A (en) * 1996-01-26 1998-03-24 Southwest Research Institute Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components
US5725573A (en) * 1994-03-29 1998-03-10 Southwest Research Institute Medical implants made of metal alloys bearing cohesive diamond like carbon coatings
US5605714A (en) * 1994-03-29 1997-02-25 Southwest Research Institute Treatments to reduce thrombogeneticity in heart valves made from titanium and its alloys
JPH07315989A (ja) * 1994-04-01 1995-12-05 Ngk Spark Plug Co Ltd ダイヤモンド被覆部材の製造方法
US5984905A (en) 1994-07-11 1999-11-16 Southwest Research Institute Non-irritating antimicrobial coating for medical implants and a process for preparing same
DE4442370A1 (de) * 1994-11-29 1996-05-30 Widia Gmbh Verfahren zur Abscheidung metallischer Schichten auf Substratkörpern und Verbundkörper aus einem Substratkörper und mindestens einer Oberflächenschicht
US5897924A (en) * 1995-06-26 1999-04-27 Board Of Trustees Operating Michigan State University Process for depositing adherent diamond thin films
US5759623A (en) * 1995-09-14 1998-06-02 Universite De Montreal Method for producing a high adhesion thin film of diamond on a Fe-based substrate
US5780119A (en) * 1996-03-20 1998-07-14 Southwest Research Institute Treatments to reduce friction and wear on metal alloy components
US5716170A (en) * 1996-05-15 1998-02-10 Kennametal Inc. Diamond coated cutting member and method of making the same
EP0828015A3 (de) * 1996-09-06 1998-07-15 SANYO ELECTRIC Co., Ltd. Mit einem harten Kohlenstoff-Film beschichtetes Substrat und Verfahren zu seiner Herstellung
JP4560964B2 (ja) * 2000-02-25 2010-10-13 住友電気工業株式会社 非晶質炭素被覆部材
JPWO2005121398A1 (ja) * 2004-06-10 2008-04-10 国立大学法人 電気通信大学 ダイヤモンド薄膜のコーティング法及びダイヤモンド被覆超硬合金部材
US8747963B2 (en) * 2009-01-23 2014-06-10 Lockheed Martin Corporation Apparatus and method for diamond film growth
US9175384B2 (en) 2010-04-30 2015-11-03 Cemecon Ag Coated body and a process for coating a body
CN103366975B (zh) 2012-03-30 2017-12-29 施耐德电器工业公司 银基电接触材料

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702960A (en) * 1980-07-30 1987-10-27 Avco Corporation Surface treatment for carbon and product
US4504519A (en) * 1981-10-21 1985-03-12 Rca Corporation Diamond-like film and process for producing same
JPS58126972A (ja) * 1982-01-22 1983-07-28 Sumitomo Electric Ind Ltd ダイヤモンド被覆超硬合金工具
US4803127A (en) * 1983-02-25 1989-02-07 Liburdi Engineering Limited Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article
JPS59159981A (ja) * 1983-03-02 1984-09-10 Mitsubishi Metal Corp 切削工具および耐摩耗工具用表面被覆耐摩耗性部材
JPS60204695A (ja) * 1984-03-28 1985-10-16 Mitsubishi Metal Corp 人工ダイヤモンド皮膜の析出形成方法
JPS60208473A (ja) * 1984-03-30 1985-10-21 Mitsubishi Metal Corp 人工ダイヤモンド被覆工具部材
US4668538A (en) * 1984-07-10 1987-05-26 Westinghouse Electric Corp. Processes for depositing metal compound coatings
JPS6152363A (ja) * 1984-08-21 1986-03-15 Mitsubishi Metal Corp サ−メツト部材の表面に人工ダイヤモンド皮膜を析出形成する方法
US4716048A (en) * 1985-02-12 1987-12-29 Canon Kabushiki Kaisha Process for forming deposited film
JPS627267A (ja) * 1985-07-03 1987-01-14 Konishiroku Photo Ind Co Ltd 網点形成方法
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
JPH0631185B2 (ja) * 1986-02-06 1994-04-27 東芝セラミツクス株式会社 炭化珪素発熱体の製造方法
US4731296A (en) * 1986-07-03 1988-03-15 Mitsubishi Kinzoku Kabushiki Kaisha Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool
JPS6315347A (ja) * 1986-07-04 1988-01-22 Nec Corp 情報保存方式
US4756964A (en) * 1986-09-29 1988-07-12 The Dow Chemical Company Barrier films having an amorphous carbon coating and methods of making
US4844951A (en) * 1987-01-20 1989-07-04 Gte Laboratories Incorporated Method for depositing ultrathin laminated oxide coatings
DE3884658T2 (de) * 1987-04-22 1994-04-28 Idemitsu Petrochemical Co Verfahren zur Diamantsynthese.
US4761308A (en) * 1987-06-22 1988-08-02 General Electric Company Process for the preparation of reflective pyrolytic graphite
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor

Also Published As

Publication number Publication date
US5028451A (en) 1991-07-02
KR920000801B1 (ko) 1992-01-23
DE68904314T2 (de) 1993-08-05
EP0327110B1 (de) 1993-01-13
KR890013217A (ko) 1989-09-22
EP0327110A1 (de) 1989-08-09
CA1336704C (en) 1995-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NGK SPARK PLUG CO., LTD., NAGOYA, AICHI, JP

8339 Ceased/non-payment of the annual fee