DE68902261T2 - Keramische ueberzuege durch pyrolyse von gemischen von kieselsaeureestern und anderen metalloxidischen edukten. - Google Patents
Keramische ueberzuege durch pyrolyse von gemischen von kieselsaeureestern und anderen metalloxidischen edukten.Info
- Publication number
- DE68902261T2 DE68902261T2 DE8989302792T DE68902261T DE68902261T2 DE 68902261 T2 DE68902261 T2 DE 68902261T2 DE 8989302792 T DE8989302792 T DE 8989302792T DE 68902261 T DE68902261 T DE 68902261T DE 68902261 T2 DE68902261 T2 DE 68902261T2
- Authority
- DE
- Germany
- Prior art keywords
- metaloxidic
- pyrolysis
- mixtures
- products
- ceramic coatings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical class [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000005524 ceramic coating Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 238000000197 pyrolysis Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/178,749 US4842888A (en) | 1988-04-07 | 1988-04-07 | Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68902261D1 DE68902261D1 (de) | 1992-09-03 |
DE68902261T2 true DE68902261T2 (de) | 1993-01-07 |
Family
ID=22653812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8989302792T Expired - Fee Related DE68902261T2 (de) | 1988-04-07 | 1989-03-21 | Keramische ueberzuege durch pyrolyse von gemischen von kieselsaeureestern und anderen metalloxidischen edukten. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4842888A (de) |
EP (1) | EP0337618B1 (de) |
JP (1) | JPH0633204B2 (de) |
KR (1) | KR940008355B1 (de) |
CA (1) | CA1332680C (de) |
DE (1) | DE68902261T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009000885A1 (de) * | 2009-02-16 | 2010-08-26 | Semikron Elektronik Gmbh & Co. Kg | Halbleitermodul |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970097A (en) * | 1989-03-16 | 1990-11-13 | Owens-Corning Fiberglas Corporation | Method for forming abrasion resistant coating on fibrous glass substrate |
JPH03100160A (ja) * | 1989-09-12 | 1991-04-25 | Nkk Corp | ケイ化モリブデン多孔体の製造方法 |
JPH03115586A (ja) * | 1989-09-28 | 1991-05-16 | Nkk Corp | セラミック膜の形成方法 |
GB8927542D0 (en) * | 1989-12-06 | 1990-02-07 | Aynsley China Limited | Glazes |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5262201A (en) * | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
CA2053985A1 (en) * | 1990-10-25 | 1992-04-26 | Sumio Hoshino | Process for producing thin glass film by sol-gel method |
DE69111578T2 (de) * | 1990-12-05 | 1996-04-11 | Shinetsu Chemical Co | Erzeugung einer wärmebeständigen und dielektrischen Beschichtung. |
US5380553A (en) * | 1990-12-24 | 1995-01-10 | Dow Corning Corporation | Reverse direction pyrolysis processing |
GB9115153D0 (en) * | 1991-07-12 | 1991-08-28 | Patel Bipin C M | Sol-gel composition for producing glassy coatings |
US5202152A (en) * | 1991-10-25 | 1993-04-13 | Cornell Research Foundation, Inc. | Synthesis of titanium nitride films |
US5820923A (en) * | 1992-11-02 | 1998-10-13 | Dow Corning Corporation | Curing silica precursors by exposure to nitrous oxide |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6784121B1 (en) * | 1998-10-23 | 2004-08-31 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
US6231989B1 (en) | 1998-11-20 | 2001-05-15 | Dow Corning Corporation | Method of forming coatings |
US6667232B2 (en) * | 1998-12-08 | 2003-12-23 | Intel Corporation | Thin dielectric layers and non-thermal formation thereof |
US7011868B2 (en) * | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
AU2001296737A1 (en) | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
GB0217990D0 (en) * | 2002-08-02 | 2002-09-11 | Imp College Innovations Ltd | Low temperature metal oxide coating |
US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
DE102008036835A1 (de) * | 2008-08-07 | 2010-02-18 | Epcos Ag | Heizungsvorrichtung und Verfahren zur Herstellung der Heizungsvorrichtung |
DE102008036836A1 (de) | 2008-08-07 | 2010-02-11 | Epcos Ag | Formkörper, Heizungsvorrichtung und Verfahren zur Herstellung eines Formkörpers |
DE102008044769A1 (de) * | 2008-08-28 | 2010-03-04 | Clariant International Limited | Verfahren zur Herstellung von keramischen Passivierungsschichten auf Silizium für die Solarzellenfertigung |
JP5735522B2 (ja) | 2009-10-27 | 2015-06-17 | シルコテック コーポレイション | 化学気相成長コーティング、物品、及び方法 |
US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
KR20120099448A (ko) | 2009-10-28 | 2012-09-10 | 다우 코닝 코포레이션 | 폴리실란-폴리실라잔 코폴리머 및 이들의 제조방법 및 용도 |
KR101790206B1 (ko) | 2010-10-05 | 2017-10-25 | 실코텍 코포레이션 | 내마모성 코팅, 물건 및 방법 |
JP6107033B2 (ja) * | 2012-09-28 | 2017-04-05 | 日立化成株式会社 | 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
FR2997708B1 (fr) * | 2012-11-06 | 2015-04-17 | Seb Sa | Semelle de fer a repasser comprenant un revetement de protection en ceramique non oxyde ou au moins partiellement non oxyde |
US9975143B2 (en) | 2013-05-14 | 2018-05-22 | Silcotek Corp. | Chemical vapor deposition functionalization |
US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
US9915001B2 (en) | 2014-09-03 | 2018-03-13 | Silcotek Corp. | Chemical vapor deposition process and coated article |
US10316408B2 (en) | 2014-12-12 | 2019-06-11 | Silcotek Corp. | Delivery device, manufacturing system and process of manufacturing |
WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
WO2017090059A1 (en) * | 2015-11-23 | 2017-06-01 | Council Of Scientific And Industrial Research | Preparation of anti-reflection and passivation layers of silicon surface |
US10323321B1 (en) | 2016-01-08 | 2019-06-18 | Silcotek Corp. | Thermal chemical vapor deposition process and coated article |
US10487403B2 (en) | 2016-12-13 | 2019-11-26 | Silcotek Corp | Fluoro-containing thermal chemical vapor deposition process and article |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3061587A (en) * | 1960-05-03 | 1962-10-30 | Hughes Aircraft Co | Ordered organo silicon-aluminum oxide copolymers and the process of making same |
JPS59119733A (ja) * | 1982-12-24 | 1984-07-11 | Toshiba Corp | 半導体装置 |
US4485094A (en) * | 1983-01-28 | 1984-11-27 | Westinghouse Electric Corp. | Method of making ABO3 of the cubic perovskite structure |
US4614673A (en) * | 1985-06-21 | 1986-09-30 | The Boeing Company | Method for forming a ceramic coating |
EP0218117A3 (de) * | 1985-10-11 | 1989-11-23 | Allied Corporation | Polycyclosilazanpolymere und ihre Verwendung als dielektrische Filme in integrierten Schaltkreisen |
US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
-
1988
- 1988-04-07 US US07/178,749 patent/US4842888A/en not_active Expired - Lifetime
-
1989
- 1989-02-06 CA CA000590169A patent/CA1332680C/en not_active Expired - Fee Related
- 1989-03-21 EP EP89302792A patent/EP0337618B1/de not_active Expired - Lifetime
- 1989-03-21 DE DE8989302792T patent/DE68902261T2/de not_active Expired - Fee Related
- 1989-04-05 JP JP1084921A patent/JPH0633204B2/ja not_active Expired - Lifetime
- 1989-04-07 KR KR1019890004571A patent/KR940008355B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009000885A1 (de) * | 2009-02-16 | 2010-08-26 | Semikron Elektronik Gmbh & Co. Kg | Halbleitermodul |
Also Published As
Publication number | Publication date |
---|---|
JPH0633204B2 (ja) | 1994-05-02 |
US4842888A (en) | 1989-06-27 |
EP0337618A1 (de) | 1989-10-18 |
CA1332680C (en) | 1994-10-25 |
KR940008355B1 (ko) | 1994-09-12 |
KR890016627A (ko) | 1989-11-29 |
EP0337618B1 (de) | 1992-07-29 |
JPH01290579A (ja) | 1989-11-22 |
DE68902261D1 (de) | 1992-09-03 |
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